Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

沉积铁钝化膜的傅立叶变换表面增强拉曼光谱

利用恒电流沉积技术、傅立叶变换表面增强拉曼散射技术现场研究了0 1mol/LNaOH溶液中铁金属电极在不同电位下的表面氧化物的组成。结果表明,在电极预钝化区,表面首先生成的Fe(OH)2可由拉曼谱图中出现的550cm-1表征,证实了以往的研究结果。进入钝化区,表面二价氧化物逐步转化为高价氧化物Fe3O4及α 、δ 和γ FeOOH。在电位回扫的过程中,各氧化产物的还原以及铁表面SERS活性的逐渐消失导致谱峰强度降低。     

Optimization of a portable microanalytical system to reduce electrode fouling from proteins associated with biomonitoring of lead (Pb) in saliva

There is a need to develop reliable portable analytical systems for on-site and real-time biomonitoring of lead (Pb) from both occupational and environmental exposures. Saliva is an appealing matrix since it is easily obtainable, and therefore a potential substitute for blood due to existing reasonably good correlation between Pb levels in blood and saliva. The microanalytical system is based on flow-injection/stripping voltammetry with a wall-jet (flow-onto) microelectrochemical cell. Samples that contain as little as 1% saliva can cause electrode fouling, resulting in significantly reduced responsiveness and irreproducible quantitations. In addition, incomplete Pb release from salivary protein can also yield a lower Pb response than expected. This paper evaluates the extent of in vitro Pb-protein binding and the optimal pretreatment for releasing Pb from the saliva samples. Even in 50% by volume of rat saliva, the electrode fouling was not observed, due to the appropriate sample pretreatment and the constant flow of the sample and acidic carrier that prevented passivation by the protein. The system offered a linear response over a low Pb range of 1-10 ppb, low detection limit of 1 ppb, excellent reproducibility, and reliability. It also yielded the same Pb concentrations in unknown samples as did the ICP-MS. These encouraging results suggest that the microanalytical system represents an important analytical advancement for real-time non-invasive biomonitoring of Pb.     

Electrochemical polarization and passivation of iron in acid solutions

Summary The potentiodynamic polarization of the iron electrode in sulphuric acid solutions was studied. The formation of a passivating film on the electrode upon anodic oxidation in sulphuric acid solution depends on the concentration of the acid. Addition of Cl^– ions to sulphuric acid solutions raises the current densities along both the active and passive regions. The difference between the dissolution current in halogen-containing media and solutions devoid of these ions, i. e., the enhancing effect of Cl^– ions, i, varies with the aggressive ions concentration according to log i=a ₅+b ₅ logC _agg. Organic carboxylates enhance the active dissolution of iron through their participation in the dissolution mechanism, while they inhibit pitting corrosion through competitive adsorption with Cl^– ions for adsorption sites on the metal surface.

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Elektrochemische Polarisation und Passivierung von Eisen in sauren Lösungen

Zusammenfassung Es wurde die potentiodynamische Polarisierung der Eisenelektrode in schwefelsauren Lösungen untersucht. Die Ausbildung eines passivierenden Films auf der Eisenelektrode nach der anodischen Oxidation hängt von der Säurekonzentration ab. Zugabe von Cl^–-Ionen zur Schwefelsäurelösung erhöht die Stromdichten sowohl in den aktiven als auch den passiven Bereichen. Der entsprechende Lösungsstrom mit bzw. ohne diese Ionen, also der verstärkende Effekt der Cl^–-Ionen variiert mit der Konzentration der aggressiven Ionen: log i=a ₅+b ₅ logc _agg. Organische Carboxylate verstärken die aktive Lösung von Eisen durch ihre Teilnahme am Lösungsmechanismus, andererseits inhibieren sie Narben-Korrosion, da sie mit den Cl^–-Ionen bezüglich möglicher Adsorptionsstellen an der Metalloberfläche konkurrieren.

     

Enhanced gas barrier properties of graphene-TiO2 nanocomposites on plastic substrates assisted by UV photoreduction of graphene oxide

Reduced graphene oxide (rGO) sheets have received great attention as a key element for thin barrier films that block the permeation of water vapor and other gases. However, it remains a challenge to prepare the rGO-based barrier films on plastic substrates through a chemically benign and low temperature fabrication route. Toxic chemicals or high temperature thermal treatments that are widely used for preparing rGO need to be avoided because they can damage the underlying plastic substrates. In this study, we report the fabrication of rGO/TiO₂ composite films via an eco-friendly and low temperature ultraviolet (UV) photoreduction process and demonstrate their enhanced gas barrier properties by measuring water vapor transmission rates (WVTRs). When photocatalytic TiO₂ nanoparticles are employed, UV exposure reduces the GO/TiO₂ composite solution to form rGO/TiO₂, which is subsequently deposited on plastic substrates. The rGO/TiO₂ composites become resistant to water absorption because the UV photoreduction of GO/TiO₂ effectively removes most polar groups on the GO sheets. We confirmed that rGO/TiO₂ composites were successfully deposited onto the plastic substrate through a solution process and the barrier films led to a substantial reduction in WVTRs of the substrate. Our strategy for preparing graphene-based thin barrier films by using a UV photoreduction process enables the fabrication of solution-processed graphene-based encapsulation layers on plastic substrates with an eco-friendly and low temperature fabrication method.     

酸性AlCl3-BMIC离子液体中的铝阳极溶解

采用线性扫描伏安法研究了Lewis 酸性AlCl₃-BMIC (BMIC: 1-butyl-3-methylimidazolium chloride)离子液体中铝电极的溶解. 铝电极在阳极极化时出现了钝化现象, 钝化是由于在铝电极表面形成了固体AlCl₃钝化膜造成的. 铝的电化学溶解过程可以依次分为三个区: 电化学控制区、过渡区和钝化区. 在电化学控制区, 铝的电化学溶解速率随着电位的正移而逐渐增加; 在过渡区, 由于电极表面AlCl₄^-和Al₂Cl₇^-浓度发生改变而析出固体AlCl₃使得铝电化学溶解速率随着电位的正移而逐渐减小; 当钝化膜形成之后, 铝的电化学溶解速率不再随着电位的正移而发生改变, 铝溶解进入钝化区. 增加搅拌、升高温度、降低离子液体AlCl₃摩尔分数都可以增加铝溶解阳极极限电流密度.     

铁阳极在浓NaOH溶液中的极化特征

使用极化曲线、电解曲线对纯铁电极在浓NaOH 溶液中的极化过程进行了研究. 结果表明, 碱溶液温度越高, 碱浓度越低,电流密度越高, 铁阳极越容易发生钝化;但在某些情况下, 铁电极出现钝化的现象很微弱甚至观察不到.电解法制备高铁酸盐的适宜条件为, 温度25-35 ℃, 极化电流密度≤4.7 mA·cm-2, 碱浓度≥ 14.5 mol·L-1. 用电化学阻抗谱(EIS)研究了上述极化过程中电极表面的阻抗变化情况, 据此描述了铁阳极在浓NaOH溶液中超钝化区极化时的阶段特征.     

n-on-p结构深台面延伸波长InGaAs探测器的ICPCVD钝化工艺

采用ICP刻蚀(inductively coupled plasma etching)工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD(inductively coupled plasma chemical vapor deposition)沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm2和5.5×10-4A/cm2.     

Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InCl_x. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.     

Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

The Kelvin method together with the simulations of surface photovoltage has been used to determine the surface electronic properties, i.e. the surface band bending (qV_S), surface state density (N_SS0) and surface fixed charge (Q_Fx) of S₂Cl₂-treated GaAs (100) surfaces. The measured values of surface photovoltage (SPV) do not show saturation at high photon flux densities in contradiction to the simple theory of SPV. This behavior of SPV agrees very well with the rigorous computer simulations and can be explained in terms of the Dember effect. Moreover, the SPV values become insensitive to surface states at moderate photon flux densities. On this basis, the surface band bending of untreated (0.79 eV) and S₂Cl₂-treated (0.60 eV) GaAs surfaces was determined. The band diagrams summarizing the obtained results proved the influence on the potential variations not only from the ionized surface states and surface fixed charge but also from the surface dipole layer on the S₂Cl₂-treated GaAs surface. The dipole arises most probably due to the S-Ga bonding on the surface. The presented results offer an alternative explanation for increased PL commonly observed after the sulfidation in the absence of substantial reduction in the band bending.