超级电容在手机电源中的应用

超级电容又称法拉电容,是指其容量为法拉级的电容。文章介绍了应用超级电容作为手机电池的总体思路并重点介绍了其充电电路、升压电路和控制电路的设计。该电池具有充电快、寿命长、免维护并且环保等特点。     

一种基于PWM的电压输出DAC电路设计

对实际应用中的脉宽调制(PWM)波形的频谱进行了理论分析．指出通过一个低通滤波器可以把PWM调制的数模转换信号解调出来．实现从PWM到DAC的转换。论文还对转换误差产生的因素进行了分析，指出了减少误差的方法，论文给出了两种从PWM到0～5V电压输出的电路实现方法，第2种电路具有很高的转换精度。     

应用数字PWM器件SA4828的大功率直流电源

本文介绍一种智能型、高精度PWR控制器SA4828，其控制实行全数字化产生三相脉宽调制波形．本文采用此器件设计大功率直流电源应用于22KW直流电机测试，对感性负载表现出具有纹波小，响应迅速、硬件电路简洁、控制简单易于编写的优点。     

宽工作电压范围单电源CMOS误差放大器

采用0.8μm标准数字CMOS工艺(VTN0=0.836V,VTP0=0.930V),设计并流片验证了具有宽工作电压范围(3～6V),可作SOC系统动态电源管理芯片内部误差放大器应用的单电源CMOS运算放大器。该误差放大器芯核同时具有适合低电压工作,并对工艺参数变化不敏感的优点。对于相同的负载情况,在3V的工作电压下,开环电压增益AD=83.1dB,单位增益带宽GB=2.4MHz,相位裕量Φ=85.2°,电源抑制比PSRR=154.0dB,转换速率Sr=2.2V/μs;在6V工作电压下,AD=85.1dB,GB=2.4MHz,Φ=85.4°,PSRR=145.3dB,Sr=3.4V/μs。     

基于CAN总线的舵机控制系统设计

主要介绍了一种基于CAN总线的舵机控制系统。系统以CAN总线作为通信方式，PWM控制信号通过硬件方式产生，具有结构简单、信号稳定和实时性强的特点。     

单光纤传输光推动便携式压力测量仪的研究

介绍了用单根光纤传输测量信号和功率信号的光功率推动液体压力测量仪及其工作原理。该仪器以电容式压力传感器的δ元件作为压力检测元件，采用低功耗前置器电路和简单直杆结构，实现了便携式测量。测量范围为O～100kPa，精度为O．01kPa。     

A new molecular rectifier device and some research in its processing

Organic materials of D-π-A type MR-X (MR-1: p-dimethylaminophenylethenetrica-rbonitrile and MR-2: p-diphenylaminophenylethene tricarbonitrile) were designed and synthesized. The device with a sandwich structure shows good rectificative phenomena. The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag). It has been found that rectificative phenomena exist only in the atmosphere-liquid interface region by means of liquid adsorption, and electric field could help form the oriented molecular film. __________ Translated from Journal of Fudan University (Natural Science), 2005, 44(4) (in Chinese)     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

250W带功率因数校正整流电源模块的研制

功率因数校正技术越来越成为电源行业研究的热点。文中介绍了适用于雷达等设备的250W带功率因数校正整流电源模块的设计，分析了其中升压电感器设计、主开关管保护、控制电路消振、散热设计和表面贴装等关键技术，完成了实验研究，获得了满意的试验结果。     

基于IGBT的PWM大功率直流伺服驱动

本文介绍ＩＧＢＴ、ＥＸＢ８４１和ＬＥＭ模块在大功率ＰＷＭ直流伺服驱动系统中的应用和系统抗干扰设计。使用效果表明，基于ＩＧＢＴ的设计，可提高大功率直流伺服系统的可靠性和性能、减小体积、降低成本。