我国IC产业发展状况分析

本文分析了集成电路及其相关技术的现状和发展趋势。分析了国内集成电路产业状况和面临的课题。     

Property improvement of pulsed laser deposited boron carbide films by pulse shortening

Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B₄C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm⁻² result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm⁻² fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 × 10⁴ to 7 × 10⁴ mm⁻² deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses.     

Relaxor type perovskites: Primary candidates of nano-polar regions

Relaxor properties of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) and non-lead perovskite thin films have been analysed in terms of large frequency dispersion of dielectric response at low temperatures. A wide spectrum of dielectric relaxation was observed in the frequency-dependent response of the imaginary part of the dielectric permittivity. Transformation from normal ferroelectric to relaxor behaviour has been observed in the case of the Ca substituting the BaTiO₃ thin films. A number of techniques were exploited to investigate the wide spectrum of relaxation times in pulsed laser ablated thin films.ac anddc electric field induced complex dielectric properties of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) thin films were studied as function of frequencies at different temperatures. Nonlinear behaviour of dielectric susceptibility with respect to the amplitude of theac drive was observed at lower temperatures. The frequency dependence of transition temperatureT _m (temperature of the maximum of dielectric constant) was studied using the Vogel-Fulcher relation. Dedicated to Professor C N R Rao on his 70th birthday     

红外焦平面器件脉冲驱动电路的小型化设计

代表着红外器件发展的主流方向的红外焦平面器件，其正常工作时需要驱动脉冲信号多达十几路，为了使红外焦平面阵列处于最佳工作状态，就必须设计出相应的驱动电路。提出了一种红外焦平面器件驱动电路的设计方法。该电路具有体积小、功率低及灵活性好等特点，为驱动电路以及成像系统的小型化提供了良好的技术基础。     

High-speed deposition of RE123 film with large current capacity by hot-wall type PLD system

We have studied a hot-wall heating system to produce GdBa₂Cu₃O_y (GdBCO) films with large critical currents (I_c) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (J_c) of about 3 MA/cm² and I_c over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform I_c distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with I_c over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W.     

PLD法生长n-Zn1-xCoxO/p-Si异质结的电学性能研究

用高功率脉冲激光轰击Zn1-xCoxO,得到锌、钴和氧的原子、分子和团簇等混合体,并在p型单晶Si表面反应生成n型Zn1-xCoxO.X射线衍射(XRD)、原子力显微镜(AFM)研究表明,这层材料是结构致密均匀、呈c轴高度择优取向的薄膜,与p型Si材料形成n-Zn1-xCoxO/p-Si异质结.在Zn1-xCoxO中加入H,生成了Co-H-Co聚合体,异质结的势垒高度随着Co含量的增加而增加,同时深能级的Co-d轨道捕获作为浅施主的间隙H提供的电子,造成的体系n型半导体层的载流子浓度降低,电阻率提高,使得n-Zn1-xCoxO/p-Si异质结在6.5V时漏电流降致6×10-3 mA,反向击穿电压超过20V,电学性能得到显著改进.     

氧化镍薄膜的制备及电化学性质

分别采用真空蒸镀_热氧化(VE_TO)及脉冲激光沉积(PLD)技术制备氧化镍(NiO)阳极薄膜材料,并利用XRD、SEM、循环伏安、充放电等方法对薄膜的结构和电化学性能进行了表征。结果表明,两种方法均制备了厚度均匀、表面光滑、与基片结合紧密、无缺陷、致密的纳米晶形NiO薄膜。采用PLD技术制备的薄膜颗粒更小、结构更有序,具有更高的电化学比容量,并且能承受大电流充放电。因此,这两种方法制备的NiO薄膜可根据充放电电流密度的要求有选择的应用于全固态薄膜锂离子电池中。     

可编程逻辑器件的设计

各种电子设计自动化（EDA）工具的出现．使传统的硬件设计方法发生了巨大的变化。在设计硬件电路时,如果使用PLD器件,就可以使电路设计更加合理化、多功能化和低成本化。介绍了PLD的设计流程．为PLD的开发与应用提供参考。     

脉冲激光沉积法制备ZnO薄膜的研究进展

基于氧化锌薄膜紫外光发光的实现,ZnO薄膜成为新的研究热点。综述了各种沉积条件对脉冲激光沉积(PLD)技术生长的氧化锌薄膜的微结构、光学和电学性质的影响,ZnO薄膜的厚度在超过400 nm时,呈现出了近似块状的性质。采用PLD技术,可以在适当的条件下制备具有特定功能的氧化锌薄膜。     

Annealing effect on the structural and magnetic properties of nickel ferrite thin films

Nickel ferrite is a soft magnetic material with inverse spinel structure. Soft ferrite films are used in microwave devices, integrated planar circuits, etc., because of their high resistivity. In this work, thin films of nickel ferrite were deposited on Si (100) substrate by using pulsed laser deposition (PLD) technique. The thickness of the film was measured by surface profilometer and also by X‐ray reflectivity (XRR). The films were annealed at three different temperatures to observe the effect on the structural and magnetic properties of the film. The films were characterised by X‐ray diffraction (XRD), Raman spectroscopy and vibrating sample magnetometer (VSM) to study the structural and magnetic properties. Copyright © 2010 John Wiley & Sons, Ltd.