Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

MEMS移相器及其在微型通信系统中的应用

从传统移相器的构造和原理出发，进一步分析了MEMS移相器的结构、特性。结果表明，MEMS移相器具有传统移相器所无法比拟的体积小、损耗小、成本低、频带宽、易于集成等突出优点。随着高阻硅衬底在微波领域应用的扩展，MEMS移相器介质损耗大幅度降低，将能与信号处理电路一同集成于硅衬底上，便于相控阵雷达等通信系统实现微小型化。     

LES of turbulent heat transfer: proper convection numerical schemes for temperature transport

Large eddy simulations of two basic configurations (decay of isotropic turbulence, and the academic plane channel flow) with heat transfer have been performed comparing several convection numerical schemes, in order to discuss their ability to evaluate temperature fluctuations properly. Results are compared with the available incompressible heat transfer direct numerical simulation data. It is shown that the use of regularizing schemes (such as high order upwind type schemes) for the temperature transport equation in combination with centered schemes for momentum transport equation gives better results than the use of centred schemes for both equations. Copyright © 2004 John Wiley & Sons, Ltd.     

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介绍了在神光Ⅱ装置上开展的长脉冲2ns三倍频激光与黑腔靶相互作用的实验。报道了采用PIN探测器阵列测量大角度受激Raman散射（SRS）角分布和采用激光卡计对背向SRS光能量积分测量的实验结果。相同实验条件下激光辐照缝靶产生的SRS光能量要强于激光与全腔靶作用产生的SRS光，小腔靶的SRS光能量要强于标准腔靶。对比长脉冲2ns及短脉冲1ns激光打靶实验结果可以看出：由于激光功率密度的下降，长脉冲激光打靶时SRS散射光能量要弱于短脉冲激光打靶。长脉冲2ns激光与标准腔靶相互作用时，等离子体堵腔比较严重。     

单片InGaAs／InP PIN PD阵列

文章简要地介绍了ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ ＰＤ阵列的制作现状及其应用和发展趋势。     

HL—1装置碳化和采用抽气孔栏时的可见辐射观测

本文描述了HL-1装置器壁碳化和采用抽气孔栏时,氢及杂质通量的变化情况;利用多道可见辐射的时空分布测量,得到了MARFE放电,在产生MARFE时,辐射热也相应增强。     

Progress on phthalocyanine-conjugated Ag and Au nanoparticles: Synthesis,characterization, and photo-physicochemical properties

Phthalocyanine (Pc) complexes are an important class of dyes with numerous (e.g., biological, photophysical, and analytical) applications. Among the methods used to improve the properties of these complexes, one should mention the introduction of different substituents, variation of the central metal ion, ligand exchange, and conjugation to nanomaterials (e.g., carbon-based nanomaterials and metal nanoparticles (NPs)). This work briefly reviews Pc complex conjugation to Ag and Au NPs, highlights the different NP shapes, and discusses the diversity of conjugation approaches. Moreover, the use of UV–Vis spectroscopy, powder X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, atomic force microscopy, dynamic light scattering and Fourier transform infrared spectroscopy to characterize Pc-NP hybrids is summarized. The effect of conjugation on Pc photo-physicochemical properties (fluorescence, singlet oxygen generation, triplet state formation, and optical limiting behavior) is discussed, and future perspectives for the synthesis and applications of new hybrids are provided.     

等离子体限幅器对雷电防护效果的试验分析北大核心CSCD

雷电对于各类装备及民用系统的电子设备有着极大的破坏作用,引起射频系统损坏的主要为感应雷,而现有的设备无法满足射频系统的防雷需求。文章对微波防护用等离子体限幅器的雷电防护特性进行了研究并开展了相关试验,结果表明,等离子体限幅器可以起到雷电防护的作用,对于感应雷电波形的幅值及波形均有着一定的限制,在等离子限幅器后接入PIN限幅器所形成的级联防护器件对后方的电路起到了有效的防护作用。     

智能手机中的SIM卡密码管理

随着移动多媒体时代的到来,拥有强大娱乐商务功能的智能手机越来越受到消费者的青睐。文中简要介绍一种新的智能手机平台Qtopia、Qtopia中独特的信号与槽机制、SIM(用户识别模块)卡中密码的种类以及Qtopia如何采用AT指令来管理SIM卡密码,并阐述了实际智能手机项目中SIM卡密码管理程序的实现思路。     

基于Q-MMIC技术的W波段低成本PIN管开关

采用低成本方法设计了一款W波段单刀单掷开关。通过在单独加工的石英基片无源电路上安装倒装PIN管,获得了一款W波段准毫米波单片（Q-MMIC）开关。为了获得低损耗、高隔离度性能,开关设计中采用了3-D PIN管模型和电路补偿结构。测试结果表明开关在88GHz时插入损耗最小,最小值为0.5dB;在80-101 GHz频率范围内,开关导通时的插入损耗小于2 dB;在84-104 GHz频率范围内,开关隔离度大于30 dB。整个开关电路尺寸为1.5 mm× 3.0 mm。