A new model for PCBM phase segregation in P3HT:PCBM blends

The phase segregation in P3HT:PCBM blend films has been investigated from an experimental and theoretical viewpoint. Optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray diffraction show that thermal annealing of P3HT:PCBM blend films leads to the formation of PCBM aggregates. These aggregates are composed of dense randomly packed ∼50 nm PCBM crystallites with an overall aggregate density of ∼0.85 g cm⁻³. By applying the critical radius of nucleation for PCBM and the Stokes-Einstein equation for mobility of PCBM in a P3HT matrix, a model is developed which explains the formation of both crystallites and aggregates.     

Isoregic Thienylene‐Phenylene Polymers: The Effects of Structural Variation and Application to Photovoltaic Devices

Isoregic conjugated polymers composed of thiophene and dialkoxybenzene units were designed to harvest incident light in the mid‐visible energy range (band gap of 2.1 eV). Poly(1,4‐bis(2‐thienyl)‐2,5‐diheptoxybenzene) (PBTB(OC₇H₁₅)₂) and poly(1,4‐bis(2‐thienyl)‐2,5‐didodecyloxybenzene) (PBTB(OC₁₂H₂₅)₂) have shown significant photovoltaic performance as an electron donor when used in tandem with the electron acceptor [6, 6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) in bulk hetero‐junction photovoltaic devices. Photovoltaic devices incorporating PBTB(OC₇H₁₅)₂ and PCBM have shown AM1.5 efficiencies of ～0.6% with a short circuit current density of 2.5 mA/cm², an open circuit voltage of 0.74 V, and a fill factor of 0.32. Incident Photon‐to‐Current Efficiency (IPCE) of the device was found to be ca. 16% at 410 nm. In order to examine the relationship between the molecular structure of the polymers and their electronic energy levels, and to correlate this with photovoltaic performance, optoelectronic and electrochemical results are discussed in relation to the I‐V characteristics of the devices. Additionally, a computer‐aided simulation is used to gain further insight into the effect of polymer structure on the energetic relationships in the bulk heterojunction devices.     

Characterization of PI:PCBM organic nonvolatile resistive memory devices under thermal stress

In this study, we fabricated nonvolatile organic memory devices using a mixture of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) (denoted as PI:PCBM) as an active memory material with Al/PI:PCBM/Al structure. Upon increasing the temperature from room temperature to 470 K, we demonstrated the good nonvolatile memory properties of our devices in terms of the distribution of ON and OFF state currents, the threshold voltage from OFF state to ON state transition, the retention, and the endurance. Our organic memory devices exhibited an excellent ON/OFF ratio (I_ON/I_OFF > 10³) through more than 200 ON/OFF switching cycles and maintained ON/OFF states for longer than 10⁴ s without showing any serious degradation under measurement temperatures up to 470 K. We also confirmed the structural robustness under thermal stress through transmission electron microscopy cross-sectional images of the active layer after a retention test at 470 K for 10⁴ s. This study demonstrates that the operation of PI:PCBM organic memory devices could be controlled at high temperatures and that the structure of our memory devices was maintained during thermal stress. These results may enable the use of nonvolatile organic memory devices in high temperature environments.     

Impact of side‐chain length on the phase structures of P3ATs and P3AT:PCBM films as revealed by SSNMR and FTIR

It is known that poly(3‐alkylthiophene) (P3AT) side‐chain length notably influences the photovoltaic performances of relating devices. However, comprehensively study on its impact on the structures of P3ATs and their blends with [6, 6]‐phenyl‐C₆₁ butyric acid methyl ester (PCBM) is insufficient. By using solid‐state NMR and FTIR techniques, four P3ATs and their PCBM blends are investigated in this work, focusing on the phase structures as modulated by side‐chain length. Recently, we revealed multiple crystalline main‐chain packings of packing a and b together with a mesophase in poly(3‐butylthiophene) (P3BT) films (DOI: 10.1021/acs.macromol.6b01828). Here, the semicrystalline structures are investigated on poly(3‐hexylthiophene) (P3HT), poly(3‐octylthiophene) (P3OT), and poly(3‐dodecylthiophene) (P3DDT) with traditional form I modification, where packing a and the amorphous phase are probed. Furthermore, crystallized side chain within packing a is detected in both P3OT and P3DDT films, which shows a FTIR absorption at 806 cm⁻¹. Structural studies are also conducted on P3AT:PCBM blends. Compared with the pure P3ATs, the polymer crystallinities of the blends show reduction of about 40% for P3OT and P3DDT, whereas only about 10% for P3HT. Moreover, in P3BT:PCBM and P3HT:PCBM, the crystalline polymers and PCBM are phase separated, while in P3OT:PCBM and P3DDT:PCBM, blend components are mostly miscible. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 751–761     

超声退火形成片状PCBM堆积聚合物太阳电池研究

采用超声退火方法制备了P3HT/PCBM聚合物有机太阳电池。测试结果表明:超声退火40℃制备的电池能量转换效率最好,最优器件的能量转换效率达到了5.16%,这主要归因为超声退火40℃的电池薄膜内形成了片状PCBM堆积,有效地提高了器件的电子迁移率和太阳能吸收效率。     

Electrical and interfacial properties of Au/P3HT:PCBM/n-Si Schottky barrier diodes at room temperature

In this study, a gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) was fabricated. To accomplish this, a spin-coating system and a thermal evaporation were used for preparation of a P3HT/PCBM layer system and for deposition of metal contacts, respectively. The forward- and reverse-bias current–voltage (I–V) characteristics of the MPS SBD at room temperature were studied to investigate its main electrical parameters such as ideality factor (n), barrier height (Φ_B), series resistance (R_s), shunt resistance (R_sh), and density of interface states (N_ss). The I–V characteristics have nonlinear behavior due to the effect of R_s, resulting in an n value (3.09) larger than unity. Additionally, it was found that n, Φ_B, R_s, R_sh, and N_ss have strong correlation with the applied bias. All results suggest that the P3HT/PCBM interfacial organic layer affects the Au/P3HT:PCBM/n-Si MPS SBD, and that R_s and N_ss are the main electrical parameters that affect the Au/P3HT:PCBM/n-Si MPS SBD. Furthermore, a lower N_ss compared with that of other types of MPS SBDs in the literature was achieved by using the P3HT/PCBM layer. This lowering shows that high-quality electronic and optoelectronic devices may be fabricated by using the Au/P3HT:PCBM/n-Si MPS SBD.     

Temperature dependence of the convex solubility parameters of organic semiconductors

Solubility parameter methods have also proven very useful in an array of theoretical and practical applications, particularly regarding the mutual solubility of polymers and organic semiconductors in bulk‐heterojunction composites. The temperature dependence of the solubility and miscibility of organic semiconductors offers a promising route for directing the organization of materials and composites toward optimal morphologies. Here, the convex solubility parameter (CSP) approach is used to investigate the temperature dependence of three organic semiconductors: PCBM, P3HT, and PCPDTBT. The CSPs and mutual solubility regions are computed at several temperatures between 25 °C and 140 °C, and the results are compared to those obtained from a traditional spherical‐fitting algorithm. In addition, the impact that constant and varying thermal expansion coefficients have on the computed solubility parameters across this temperature range is investigated. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 81–88     

Detecting 6 MV X-rays using an organic photovoltaic device

An organic photovoltaic (OPV) device has been used in conjunction with a flexible inorganic phosphor to produce a radiation tolerant, efficient and linear detector for 6 MV X-rays. The OPVs were based on a blend of poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM). We show that the devices have a sensitivity an order of magnitude higher than a commercial silicon detector used as a reference. Exposure to 360 Grays of radiation resulted in a small (2%) degradation in performance demonstrating that these detectors have the potential to be used as flexible, real-time, in vivo dosimeters for oncology treatments.