Partial P-Type Metal Ions Doping Induced Variation of Both Crystal Structure and Oxygen Vacancy Within Cu/SnO2 Metastable Solid Solution Nanofibers for Highly Sensitive C2H2 Sensor

Partial P-type metal ions doping(PPMID) is an alternative method to further enhance the gas sensing performance of N-type metal oxides(NMOs) in contrast to that of P-N metal oxides heterojunctions, but the influences of the introduction of PPMID on the grain size and oxygen vacancies of NMOs have been rarely investigated. Herein, a simple and effective route has been demonstrated to address this problem with Cu²⁺-doped SnO₂ metastable solid solution nanofibers(CSMSSNs) as model and C₂H₂ as target molecule by combining electrospinning and calcination technique. It seems that the introduction of PPMID can also affect crystal structure and oxygen vacancies of NMOs, proven by combining X-ray diffraction(XRD) and X-ray photoelectron spectra(XPS). Thus, PPD, crystal structure and oxygen vacancies have been combined to clarify the enhanced sensing performance of Cu-doped SnO₂ metastable solid solution nanofibers angainst C₂H₂.     

Effect of a novel phosphorous-nitrogen containing intumescent flame retardant on the fire retardancy and the thermal behaviour of poly(butylene terephthalate)

A novel phosphorus-nitrogen containing intumescent flame retardant (P-N IFR) was prepared via the reaction of a caged bicyclic phosphorus (PEPA) compound and 4,4′-diamino diphenyl methane (DDM) in two steps. The product was added to poly(butylene terephthalate) (PBT) to obtain halogen-free flame retarded polyester. UL-94 test, thermogravimetry and in situ infrared spectroscopy were used to characterize the flammability, thermal degradation properties and the char-forming process. It was shown that the phosphorus-nitrogen containing compound could improve both the flame retardancy and thermal stability more effectively than other P-N flame retardants. Furthermore, it was a good char-forming agent incorporated with the co-addition of polyurethane (PU) when the combustion occurred. The formation of P-N structure was incorporated in the char layer.     

一种新的熔化理论——位错运动的量子化模型

 本文提出了一种新的熔化理论，从位错运动的量子化模型出发导出了林德曼熔化定律，得到了与实验结果相符的熔点计算值。     

Suzuki-Miyaura cross-coupling reaction of aryl chlorides with aryl boronic acids catalyzed by a palladium dichloride adduct of N-diphenylphosphanyl-2-aminopyridine

One palladium dichloride adduct of a phosphine-pyridine ligand N-diphenylphosphanyl-2-aminopyridine (L₁) [(L₁)PdCl₂] (1) has been prepared and structurally characterized. Compound 1 can be used as an effective catalyst for the Suzuki-Miyaura cross-coupling reactions of unreactive aryl chlorides with aryl boronic acids, and worked much better than its mono- or bidentate phosphine ligands. The reactions with a wide scope of substrates proceeded to give desired products in good to excellent yields.     

由等价掺杂转换理论得到非对称线性缓变P-N结的击穿特性

基于等价掺杂转换理论的应用,得到了解析计算非对称线性缓变P-N结击穿特性.由于非对称线性缓变P-N结是单扩散P-N结的一个恰当近似,因而,研究其击穿特性可以更好地理解和设计功率器件P-N结的终端结构.运用等价掺杂转换方法的基本理论得到了不同扩散掺杂梯度和衬底浓度组合系列的击穿电压.研究了最大耗尽层宽度在扩散侧和衬底侧的扩展,给出了它们随扩散掺杂梯度和衬底浓度组合的变化而出现的不同特点.本方法预言的最大击穿电压较之单纯的突变结和对称线性缓变P-N结更接近文献报道的结果,显示了等价掺杂转换理论的理论计算非对称线性缓变P-N结击穿电压的有效性.     

硅基片材料激光热处理的实验研究

介绍硅片材料激光热处理技术，分析报道了激光热处理和实验结果；并把这一研究结果试用于晶体管生产线上。     

拓扑缺陷的不同分布对单壁碳纳米管电学性能的影响

在紧束缚近似基础上,利用扩展的Su-Schriffer-Heeger(SSH)模型,在实空间研究了在完整的"zigzag"碳纳米管中分别引入5/7,5/6/7,5/6/6/7拓扑缺陷所构成的(9,0)-(8,0),(9,0)-(7,0)和(9,0)-(6,0)三种异质结的电学性能.通过研究表明:这些拓扑缺陷不仅改变碳管的直径,而且支配费米能级附近的电学行为.并计算了(9,0)-(8,0),(9,0)-(7,0)和(9,0)-(6,0)系统的电子态密度,对这3种异质结的能带结构和电子态密度进行了比较.结果表明:五边形和七边形在碳管中分布的不同对碳管电学性能的影响明显不同.因此,可以研制出基于这些异质结的不同的电子器件基元.     

新型N-P配体的合成、表征及其在氢转移反应中的应用

利用2,3-二(二苯膦氧基)-1,3-丁二烯与胺的迈克尔加成反应,合成了单胺基及环胺基改性的有机氧化膦,经有机硅烷还原,制备出胺基取代的膦配体,所得化合物经NMR及单晶X射线衍射分析.考察了所得配体与Ru(PPh3)3Cl2组成的催化体系在苯乙酮氧转移反应中的催化活性,发现氧化膦与Ru原位形成的催化剂比其还原态的三价膦组成的催化剂催化活性还高,二胺基取代的二氧化膦配体具有较高的催化活性,TON可达273.而采用先制备催化剂再催化反应时配体6的钌络合物催化活性TON可达352.     

Novel Organophosphorus Reagents for the Synthesis of Amines

Abstract:

New organophosphorus equivalents of a² type N-protected amine synthons are presented.     

Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction

Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell＇s internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different.