Radiative lifetimes in Ce I and Ce II

New radiative lifetime measurements based on time-resolved laser-induced fluorescence techniques are reported for 18 even-parity levels belonging to the 4f5d^26p and 4f ²5d ² configurations of Ce I and 6 even-parity levels belonging to the 5d^26s, 4f5d6p, and 4f6s6p configurations of Ce II. Free neutral and singly ionized cerium atoms were produced by laser ablation. The Ce I and Ce II levels range in energy from 26 545 to 29 102 cm^-1, and 42 573 to 48 152 cm^-1, respectively. Received 25 September 2002 Published online 4 March 2003     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

S频段大功率振荡用砷化镓场效应晶体管的微波性能

对WC76型S频段大功率振荡用砷化镓场效应晶体管的微波性能作了介绍。文中给出了测试振荡器的设计。测试结果表明,WC76型振荡管在s频段的微波性能良好,振荡频率在3GHz左右时,输出功率可达3.5w,直流—射频转换效率可达44％,而且在2～4GHz的整个S频段均能满意地工作。     

X波段五腔渡越管振荡器的理论与实验研究

 提出了一种新结构的X波段五腔渡越管振荡器，进行了理论和实验研究。根据场分布进行了一维非线性分析，结果表明该结构可以产生高功率微波，并判断了工作模式，为TM₀₁模的3π/5模。采用粒子模拟验证了一维非线性分析的结论，并优化设计出五腔渡越管振荡器,优化结果为：输出功率约1 GW， 工作频率9.3 GHz，束波转换效率约22%。实验中，通过参数调节，得到频率约9.25 GHz，峰值功率约780 MW，脉宽（半高宽）21 ns的输出微波，束波转换效率约为16%。实验结果与模拟结果基本符合。     

高剥离类镁等电子序列的磁偶极M1和电四极E2光谱跃迁理论研究

利用全相对论性多组态Dirac-Fock广义平均能级方法，系统地计算了类镁离子3s3p磁偶极Ml^3P2--^3P1和电四极E2 ^2P2--^3P0(Z=20-103)光谱跃迁的能级间隔、跃迁几率和振子强度。计算中考虑了原子核的有限体积效应，进行了高阶Breit修正和QED修正，所得到的能级间隔和最近的实验数据及理论计算值进行了比较。计算结果表明：高原子序数的高荷电离子的磁偶极矩M1和电四极矩E2跃迁几率和中性原子的电偶极E1的相当，在ICF和MCF高温激光等离子体中，磁偶极矩M1和电四极矩E2跃迁过程不容被忽视。     

Transition energies, wavelengths, oscillator strengths and transition probabilities between 1s, 1sns and 1snp (2?n?9) states for He-like Silicon

Multiconfiguration Hartree-Fock calculations with Breit-Pauli relativistic corrections are reported for electric dipole transition (E1) energies, wavelengths, weighted oscillator strengths and transition probabilities between all of the 1s², 1sns and 1snp (2?n?9) states for He-like silicon. The results are found to compare very well with available other results except Δn=0 due to differences in the calculated excitation energies.     

高Q Ba(Zn_(1/3)Ta_(2/3))O_3介质谐振器材料及其在毫米波系统中的应用

叙述了Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质谐振器材料的制备、结构、微波性能及典型应用。Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质材料介电常数εｒ为２９．５，频率温度系数τ≈０（－５５～＋８５℃），１０ＧＨｚ下最大无载Ｑ值１４７００，在２８ＧＨｚ测得Ｑ值约为４８００。这种材料具有高Ｑ值，特别适用于Ｘ以上波段作为振荡器电路中频率稳定元件。用这种介质谐振器已研制出８ｍｍ介质稳频微带耿氏振荡器，频率稳定度小于１０×１０－６／℃，最大输出功率达１８０ｍＷ。     

一种新颖的跳频振荡器

摘要本文综合考虑到频率合成技术及单端口体波谐振器HBAR的特点提出了一种基于一阶非线性PLL的锁相频率合成方案。文中对这种跳频方案的原理、性能特点作了详细论述、并通过实验、从不同角度对本方案进行了说明、同时对整机的各项指标作了详尽测试:在HBAR无载Q_N值为4000的情况下,该多模跳频振荡源的捷变范围为770MHz—840MHz、捷变时间小于20μS。杂散分量低于—60dB、二次谐波分量低于—34dB。离散捷变频率点为16点,构成闭环跳频系统后,对开环VCO的短稳改善了三个量级:从1.3×10~(-5)/ms到1.6×10~(-8)/ms及9.56×~(-7)/s到1.69×!0~(-9)/s,尤为重要的是该多模跳频振荡源达到此性能所需的硬件量很小,因此在对体积要求苛刻的场合、此种跳频方案具有极强的竞争力。     

Oscillator Strength Calculations with the Compromised Orbitals

The oscillator strength has been calculated from a common set of compromised orbitals, instead of sets of the two separately optimized non-orthogonal orbitals for the two states involved in the transition. Inaccuracies of two types arose from the calculations were assessed by investigating simple atomic and molecular systems.     

离子簇合物HeN_2~+的电子光谱的从头算研究

本文报道了离子簇合物HeN2＋的电子光谱的从头算结果。在MCSCF／6－31G（d，p）水平上，对其基态进行了几何优化，用该构型．在SDC1／6－31（d，p）水平上计算了基态的总能量。用SDCI方法计算得到HeN2＋从基态到选择激发态的垂直跃迁能、振子强度、跃迁频率、辐射寿命以及Einstain系数。该结果可以较好的验证maier的实验。