Yellow‐light‐emitting cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative: Its synthesis and optical properties

A soluble cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative ( 9 ) was synthesized and characterized. Comparison between 9 and its model compound ( 10 ) showed that the chromophore in 9 remained to be well defined as a result of a π‐conjugation interruption at adjacent m‐phenylene units. The attachment of a cyano substituent only at the β position of the vinylene allowed the maximum electronic impact of the cyano group on the optical properties of the poly(p‐phenylene vinylene) material. At a low temperature (?108 or ?198 °C), the vibronic structures of 9 and 10 were partially resolved. The absorption and emission spectra of a film of 9 were less temperature‐dependent than those of a film of 10 , indicating that the former had a lower tendency to aggregate. A light‐emitting diode (LED) based on 9 emitted yellow light (λ_max ≈ 578 nm) with an external quantum efficiency of 0.03%. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3149–3158, 2003     

Single LED based dual wavelength referenced optical fibre sensor system using intensity modulation

An intensity-modulated optical fibre sensor system is described which employs a single LED source to provide the measurand and the reference signals with two separate wavelength bands. The allocated wavelength bands are selected to minimize any differential intensity effects that may arise from LED thermal variations. The sensor system, comprising a transceiver unit connected to an optical displacement sensor using a single optical fibre, provides an output fully referenced for all major common-mode variations that are likely to occur. Performance characteristics for the prototype system are reported which show a linear displacement range of over 20 mm.     

Highly Efficient Quasi 2D Blue Perovskite Electroluminescence Leveraging a Dual Ligand Composition

Perovskite light-emitting diodes (PeLEDs) are advancing because of their superior external quantum efficiencies (EQEs) and color purity. Still, additional work is needed for blue PeLEDs to achieve the same benchmarks as the other visible colors. This study demonstrates an extremely efficient blue PeLED with a 488 nm peak emission, a maximum luminance of 8600 cd m⁻², and a maximum EQE of 12.2% by incorporating the double-sided ethane-1,2-diammonium bromide (EDBr₂) ligand salt along with the long-chain ligand methylphenylammonium chloride (MeCl). The EDBr₂ successfully improves the interaction between 2D perovskite layers by reducing the weak van der Waals interaction and creating a Dion–Jacobson (DJ) structure. Whereas the pristine sample (without EDBr₂) is inhibited by small stacking number (n) 2D phases with nonradiative recombination regions that diminish the PeLED performance, adding EDBr₂ successfully enables better energy transfer from small n phases to larger n phases. As evidenced by photoluminescence (PL), scanning electron microscopy (SEM), and atomic force microscopy (AFM) characterization, EDBr₂ improves the morphology by reduction of pinholes and passivation of defects, subsequently improving the efficiencies and operational lifetimes of quasi-2D blue PeLEDs.     

功率型白光LED的热特性研究

大功率LED照明单元在光通量提高的同时伴随着散热，且普通功率型白光LED多采用蓝光芯片激发荧光粉的方法，随着温度的提升，荧光粉对应的波长会发生漂移。本文从功率型白光LED的发热原理出发，试验了其在脉冲源作用下，用于照明的可能性。试验表明，在此激励源的作用下，LED输出与散热很好，并从理论上进行了解释。     

低色温高显色性大功率白光LED的制备及其发光特性研究

用GaN基大功率蓝光LED芯片作为激发光源，分别用荧光粉转换法和红光LED补偿法制备了不同相关色温及显色指数的白光LED。对器件的发光特性研究表明，采用监光LED芯片激发单一黄色荧光粉，虽可以获得光通量和发光效率较高的白光LED，但其色温较高，显色性较差；在黄色荧光粉中添加红色荧光粉，由于光谱中红色成分的增加，可降低器件的色温，并提高器件的显色性，但由于目前红色荧光粉的转换效率较低，致使器件的整体发光效率不高；采用蓝光LED芯片激发黄色荧光粉，同时用红光LED进行补偿，通过调整蓝光和红光LED芯片的工作电流以及荧光粉的用量，可获得低色温和高显色性白光LED，而且整体发光效率较高。     

Photo-reception properties of common LEDs

The article proves that common LEDs may act as photodetectors with limited sensitivity, if they are polarized with an appropriate reverse voltage. The measured responsivities are ranged between 0.002 and 0.156 A/W and they depend on the LED type. The only one exception are white (phosphorescent) LEDs which do not exhibit any photosensitivity. There have also shown that a bandwidth of LEDs, which were examined in a role of photodetectors, is of a few tens of MHz, which is an order of magnitude greater than their modulation bandwidth as transmitters. The reasons of the observed LEDs behaviour are explained theoretically. The obtained results are indicated that some of them may be used as both transmitters and receivers in the VLC links working in a bi-directional half-duplex mode.     

量子阱层和垒层具有不同Al组分的270/290/330nm AlGaN基深紫外LED光电性能

为了研究AlGaN量子阱层和垒层中Al组分不同对AlGaN基深紫外发光二极管(LED)光电性能的影响,本文利用MOCVD生长、光刻和干法刻蚀工艺制备了AlGaN量子阱层和垒层具有不同Al组分的270/290/330nm深紫外LED,通过实验和数值模拟计算方法发现,量子阱层和垒层中具有低Al组分紫外LED的AlGaN材料具有较低的位错密度、较高的光输出功率和外量子效率。通过电流-电压(I-V)曲线拟合出的较大的理想因子(3.5)和能带结构图表明,AlGaN深紫外LED的电流产生是隧穿机制占据主导作用,这是因为高Al组分AlGaN量子阱中强极化场造成了有源层区域较大的能带弯曲和电势降。     

Catalyst‐Free GaN Nanorods Synthesized by Selective Area Growth

GaN nanorod formation on Ga‐polar GaN by continuous mode metalorganic chemical vapor deposition selective area growth (MOCVD SAG) is achieved under a relatively Ga‐rich condition. The Ga‐rich condition, provided by applying a very low V/III ratio, alters the growth rates of various planes of the defined nanostructure by increasing relative growth rate of the semi‐polar tilted m‐plane {1–101} that usually is the slowest growing plane under continuous growth conditions. This increased growth rate relative to the non‐polar m‐plane {1–100} and even the c‐plane (0001), permits the formation of GaN nanorods with nonpolar sidewalls. In addition, a new growth mode, called the NH₃‐pulsed mode, is introduced, utilizing the advantages of both the continuous mode and the lower growth rate pulsed mode to form nanorods. Finally, nanorods grown under the different growth modes are compared and discussed.