印制板蚀刻、微蚀刻废液的再生和铜回收的技术及设备

传统的印制板蚀刻废液处理方法存在着工艺落后、操作不便、二次污染、效益不高等问题,本工艺采用特殊的萃取电解、吸附电解技术,使蚀刻废液得以再生循环利用,铜得以100%回收,低含铜废水铜得到98%回收,整个系统不产生二次污染,获得的铜为高纯度铜板,在实现污染控制的同时,废液废水得到了资源化利用。     

Influence of the cathodic polarization on the stability of Ti surface in concentrated KOH solutions

The stability of spontaneous thin layers and thin layers formed upon cathodical polarization of Ti in KOH solutions have been studied by potentiostatic and ellipsometric methods. At open circuit potential (OCP) the strongly adherent films, whose thickness depends on the concentration of the KOH solution, were formed. During the cathodic polarization the transformation of these films to weakly adsorbed precipitated layers on the electrode surface was observed. Comparing the theoretically computed curves with the experimental Ψ vs Δ loci measured ellipsometrically, the complex indices of refraction and the thickness of the generated films, from 3.6 to 60 nm in 1 M KOH and from 36 to 105 nm in 5 M KOH (adherent to the electrode surface), were determined. At OCP the rate of film growth increases with increasing the concentration of KOH solution. Cathodic polarizations change the chemical composition and retard the rate of film growth. Based on the ellipsometric and electrochemical data the chemical compositions of the formed films consisted of TiO₂, Ti₂O₃, TiO₂·H₂O, Ti(OH)₃ and TiOOH·nH₂O.     

Michael addition reactions of acetoacetates and malonates with acrylates in water under strongly alkaline conditions

Michael addition reactions of acetoacetates and malonates with acrylates in a 5 M KOH aqueous solution without using any other catalysts are described. When they are either tert-butyl or benzyl esters, the reaction proceeded very rapidly to afford moderate to high yields of the corresponding bis-Michael adducts that are unexpectedly stable under these conditions.     

热处理及与KOH共炭化对深度脱除煤中无机矿物质的促进作用

研究了煤经热处理（炭化）以及煤与ＫＯＨ共炭化对酸洗脱灰的影响。结果表明，煤经炭化再用盐酸洗涤，可以在缓和的条件下大幅度提高酸洗脱灰率；煤与ＫＯＨ共炭化后再酸洗，不仅对煤中的粘土、黄铁矿等无机矿物质有很好的效果，还特别适于脱除在一般情况下都难以除去的石英矿物。     

晶格畸变检测仪研究碳化硅晶片中位错缺陷分布

利用晶格畸变检测仪研究了SiC晶片位错分布情况,通过对熔融KOH腐蚀后的SiC晶片进行全片或局部扫描,从而得到完整SiC晶片或局部区域的位错分布.与LEXT OLS40003D激光共聚焦显微镜扫描腐蚀图进行比较,晶格畸变检测仪扫描腐蚀图可以将晶片上位错腐蚀坑信息完全呈现出来,且根据腐蚀坑呈现的颜色及尺寸大小,可以分辨出...     

Regular arrays of triangular‐microstructure formed on silicon (111) surface via ultrafast laser irradiation in KOH solution

The regular micrometer‐scale triangular arrays were formed using ultrafast femtosecond laser irradiation on (111) surface of silicon wafer immersed in KOH solution (0.1 g/ml). At low laser fluence, the resulting surface is covered by triangular pits microstructures, whereas at high laser fluence, the structures are transformed to multilayer‐triangular stacks‐microstructures. The number of triangular stacks layer increased as the laser fluence increased. The formation of triangle microstructure arrays depends on both silicon surface crystallographic orientation and the concentration of KOH solution. Either for lower KOH solution concentration (0.02 g/ml) or other silicon crystallographic orientation, triangle arrays cannot be obtained. We attribute the formation of triangular microstructure arrays to the laser‐assisted chemical etching process. Copyright © 2013 John Wiley & Sons, Ltd.     

超级活性炭的合成及活化反应机理

以石油焦为原料,采用碱熔活化法合成出具有超高比表面的超级活性炭.借助XRD、TG DTA、N2吸附实验等手段,对其结构与性能进行了表征.同时,设计原位TG DTA测试技术、反应快速终止技术,对超级活性炭合成机理进行了考察,提出了两段活化反应机理,即中温径向活化机理和高温横向活化机理.发现K2O、－O－K＋以及－CO－2K＋是径向活化为主的中温活化段的活化剂活性组分,而处于熔融状态的K＋O－、K＋则是横向活化为主的高温活化段的催化活性组分.并发现径向活化是超级活性炭形成发达微孔分布的主要途径,也是控制超级活性炭微孔分布的主要手段.而高温横向活化机理则是导致超级活性炭形成大孔的主要途径.高温横向活化与中温径向活化一起构成石油焦基超级活性炭形成的主要机理.     

用规整膜板对砷化镓的三维微结构图形加工刻蚀

以微齿轮图形结构作为规整模板 ,用约束刻蚀剂层技术对GaAs样品表面进行了加工刻蚀 .在有捕捉剂H3AsO3存在的情况下 ,规则微齿轮图形能够很好地在样品表面复制 .刻蚀结果与没有捕捉剂存在时的刻蚀结果做了比较 .另外还测试了不同方法制得膜板的性能 ,初步探讨了电化学模板的制作工艺 .     

Aufschlu?verfahren zur Analyse der Alkylphenolkomponente in Alkylphenolpolyglykol?thern

Zusammenfassung Um die Polyglykolkette in oxalkylierten Alkylphenolen abzuspalten, werden diese in schmelzendem Kaliumhydroxid aufgeschlossen. Der Aufschluß entfernt die Polyglykolkette quantitativ, ohne die Alkylkette der Alkylphenole zu verändern. Die Alkylphenole werden isoliert und können nun mit den üblichen chromatographischen Methoden aufgetrennt werden. Ihre Strukturen lassen sich mit Hilfe von IR-, UV- und NMR-Spektren aufklären. Die Diskussion über die Spektren von Umsetzungsprodukten aus Butylphenol und Äthylenoxid sowie Propylenoxid belegt die Notwendigkeit einer solchen Abbaumethode.Herrn Prof. Dr. Werner Schultheis zum 70. Geburtstag gewidmet.     

Characterization of the carrot defect in 4H-SiC epitaxial layers

Characterization of the epitaxial defect known as the carrot defect was performed in thick 4H-SiC epilayers. A large number of carrot defects have been studied using different experimental techniques such as Nomarski optical microscopy, KOH etching, cathodoluminescence and synchrotron white beam X-ray topography. This has revealed that carrot defects appear in many different shapes and structures in the epilayers. Our results support the previous assignment of the carrot defect as related to a prismatic stacking fault. However, we have observed carrot defects with and without a visible threading dislocation related etch pit in the head region, after KOH etching. Polishing of epilayers in a few μm steps in combination with etching in molten KOH and imaging using Nomarski optical microscope has been used to find the geometry and origin of the carrot defects in different epilayers. The defects were found to originate both at the epi-substrate interface and during the epitaxial growth. Different sources of the carrot defect have been observed at the epi-substrate interface, which result in different structures and surfaces appearance of the defect in the epilayer. Furthermore, termination of the carrot defect inside the epilayer and the influence of substrate surface damage and growth conditions on the density of carrot defects are studied.