Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Fiberings with Fiber RP（κ）

Let κ be non-negative integer. The unoriented bordism classes, which can be represented as [RP（ξ^κ）] where ξ^κ is a k-plane bundle, form an ideal of the unoriented bordism ring MO.. A group of generators of this ideal expressed by a base of MO. and a necessary and sufficient condition for a bordism class to belong to this ideal are given.     

DSP与PC间的数据通讯

DSP由于具有高性能和灵活可编程的优点而得到广泛的应用。文章给出了用PC机作主机 ,DSP作从机来实现DSP与PC机间有效、可靠通讯的实现方法。同时通过一个数据传输程序的例子来详细阐述如何使用VB6.0专业版作为开发工具 ,并利用DSP中的SCI(SerialCommunicationInter face)模块来实现DSP与微机间的数据传递方法。     

线性常微分方程组解的特征数的估计

复数域上线性系统ｘ＝Ａ（ｔ）ｘ，当Ａ（ｔ）＝（ａｉｊ（ｔ））ｎ×ｎ具有（ｎ，Ｎ，ｒ） 差异性质且ｒｎ时，解的特征数ｊ有估计λｊ－ｌｉｍｔ→∞１ｔ∫ｔｔ０Ｒｅａｊ（τ）ｄτｎ－１ｒ＋１－ｎｌｉｍｔ→∞１ｔ∫ｔｔ０Ａ（τ）ｄτ，ｊ＝１，２，…，ｎ，其中Ａ（ｔ）＝ｍａｘ｛｜ａｉｊ（ｔ）｜：ｉ，ｊ＝１，２，…，ｎ，ｉ≠ｊ．｝     

计算机串行通信综述

本文着重向读者介绍目前流行的几种计算机串行通信规程，它们是ＥＩＡ－ＲＳ－２３２Ｃ、ＥＩＡ－ＲＳ－４２２Ａ、ＥＩＡ－ＲＳ－４２３Ａ、ＥＩＡ－ＲＳ－４４９、ＥＩＡ－ＲＳ－４８５、ＡＲ－ＩＮＣ－４２９等。     

Surface and interfacial properties of PVDF/acrylic copolymer blends before and after UV exposure

Morphological and chemical properties of both the surface and interface of poly(vinylidene fluoride)/poly(methyl methacrylate)-co-poly(ethyl acrylate) (PVDF/PMMA-co-PEA) blend films have been investigated before and after the samples were exposed to ultraviolet (UV) irradiation using a xenon arc lamp at 50 °C and 9% relative humidity (RH) for 7 months. Surface and interfacial morphologies were studied by atomic force microscopy (AFM). Chemical composition information was obtained by confocal Raman microscopy, attenuated total reflection-FTIR spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. Results show an enrichment of the PVDF material at the air surface, while the acrylic copolymer enriches the interface. Blends having greater than 50% mass fraction of PVDF show little change in the surface morphology after UV exposure for 7 months. However, for a lower PVDF content, blends exhibit significant degradation of PMMA-co-PEA copolymer and a much rougher surface after UV exposure. Microstructural changes in the PVDF spherulites are also observed after UV degradation. It is found that the surface and interfacial morphologies are correlated with the chemical properties.     

CuPc molecules adsorbed on Au(1 1 0)-(1 × 2): growth morphology and evolution of valence band states

We present the growth morphology, the long-range ordering, and the evolution of the valence band electronic states of ultrathin films of copper phthalocyanine (CuPc) deposited on the Au(1 1 0)-(1 × 2) reconstructed surface, as a function of the organic molecule coverage. The low energy electron diffraction patterns present a (5 × 3) reconstruction from the early adsorption stages. High-resolution UV photoelectron spectroscopy data show the disappearance of the Au surface states related to the (1 × 2) reconstruction, and the presence of new electronic features related to the molecule-substrate interaction and to the CuPc molecular states. The CuPc highest occupied molecular orbital gradually emerges in the valence band, while the interface electronic states are quenched, upon increasing the coverage.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.     

自动检测系统原理应用和发展状况的研究

自动检测系统广泛应用于各类产品的设计、生产、使用、维护等各个阶段,对提高产品性能及生产率、降低生产成本及整个生产周期成本起着重要作用。首先介绍了检测、检验以及自动检测系统的概念,其次通过自动检测系统的各个组成部分,详述了系统的工作原理,介绍了自动检测系统组建的概念、结构以及在组建中所使用的关键技术。对早期的自动检测系统和新一代自动检测系统进行了介绍,并详述自动检测系统的3个发展阶段。     

锥形有源条半导体光放大器增益和饱和特性分析

以行波半导体光放大器速度方程为基础，采用传输矩阵方法，对锥形结构半导体光放大器的增益和饱和特性进行理论研究。讨论了不同锥形长度，不同结构时的增益和饱和特性差异。理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。在同一锥度下，长锥形长度能提高饱和增益，降低偏振度。在进行半导体光放大器有源条结构设计时要综合考虑锥度及锥形长度的影响，以实现结构优化 。