Off‐grid DoA estimation method of wideband signals

In this paper, an off‐grid direction of arrival (DoA) estimation method is proposed for wideband signals. This method is based on the sparse representation (SR) of the array covariance matrix. Similar to the time domain DoA estimation methods, the correlation function of the sources was assumed to be the same and known. A new measurement vector is obtained using the lower‐left triangular elements of the covariance matrix. The DoAs are estimated by quantizing the entire range of continuous angle space into discrete grid points. However, the exact DoAs may be located between two grid points; therefore, this estimation has errors. The accuracy of DoA estimation is improved by the minimization of the difference between the new measurement vector and its estimated values. Simulation results revealed that the proposed method can enhance the DoA estimation accuracy of wideband signals.     

On Potentially Abelian Geometric Representations

The finiteness is proved of the set of isomorphism classes of potentially abelian geometric Galois representations with a given set of data. This is a special case of the finiteness conjecture of Fontaine and Mazur.     

创建互联网业务价值链

为促进互联网的良性发展,要使设备制造商、电信运营商、虚拟运营商/集团用户、内容提供商和最终用户构成一条互联网业务价值链,价值链的创建对互联网接入设备提出了更高的要求,华为公司的Quid-wayTMA8010Expert多业务综合接入平台可构建宽带城域网分组语音解决方案、可平滑演进为下一代网络中的媒体网关、提供窄带价值链、提供唯一号码业务以及实现多业务综合接入。     

因素空间理论与知识表示的数学框架（Ⅷ）─—变权综合原理

本文是文［１－７］的继续，研究变权综合问题，从确定变权的经验公式入手引出了变权原理，给出了变权的公理化定义，讨论了与之有关的均衡函数及其梯度向量。     

线性分式规划最优解集的求法

本文使用多面集的表示定理，导出了线性分式规划最优解集的结构，并给出确定全部最优解的计算步骤。     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Prime divisors of sparse integers

We obtain a lower bound on the number of prime divisors of integers whose g-ary expansion contains a fixed number of nonzero digits. This revised version was published online in August 2006 with corrections to the Cover Date.     

用楔形柱面光纤微透镜耦合的1.3μm SOA组件

运用激光模式耦合理论分析了半导体光放大器(SOA)与单模通信光纤的连接损耗,并设计制作了楔形柱面光纤微透镜用来实现两者的模斑匹配,有效地降低了器件的光耦合损耗.本文介绍了楔形柱面光纤微透镜耦合的1.3 μm半导体光放大器(SOA)组件及其制作方法.该组件的最大增益不小于14 dB,其偏振灵敏度小于1 dB,增益波动不大于0.5 dB.