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排序方式: 共有548条查询结果,搜索用时 31 毫秒
1.
R. Grac M. Pugnet J.H. Collet B. Lambert C. De Matos H. L'Haridon A. Le Corre J.O. White 《Superlattices and Microstructures》1997,22(4):505-509
We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm−2, and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation. 相似文献
2.
D. Xu T. Enoki T. Suemitsu Y. Umeda H. Yokoyama Y. Ishii 《Journal of Electronic Materials》1998,27(7):L51-L53
We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures,
which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved
performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different
surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively,
the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry
of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to
conduct “recess engineering” for InAlAs/InGaAs MODFETs. 相似文献
3.
利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV。此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系。 相似文献
4.
A. Kussmaul S. Vernon P. C. Colter R. Sudharsanan A. Mastrovito K. J. Linden N. H. Karam N. H. Karam S. C. Warnick M. A. Dahleh 《Journal of Electronic Materials》1997,26(10):1145-1153
We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth
of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures
of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric
data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based
structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely
powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult
and time-consuming to obtain after growth. 相似文献
5.
文章简要地介绍了InGaAs/InP PIN PD阵列的制作现状及其应用和发展趋势。 相似文献
6.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当.
关键词:
MOCVD
InGaAs/InGaAsP
应变量子阱
分布反馈激光器 相似文献
7.
G. Coudenys I. Moeeman G. Vermeire F. Vermaerke Y. Zhu P. Van Daele P. Demeester E. Maayan B. Elsner J. Salzman E. Finkman 《Journal of Electronic Materials》1994,23(2):225-232
The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate
during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of
photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate.
Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials.
Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked
channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor
pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow
mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore,
we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible
for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth. 相似文献
8.
J. H. Marsh S. A. Bradshaw A. C. Bryce R. Gwilliam R. W. Glew 《Journal of Electronic Materials》1991,20(12):973-978
Impurity induced disordering of GaInAs quantum well structures with barriers of AlGaInAs and of GaInAsP has been investigated
using boron and fluorine. The impurities were introduced by ion implantation followed by thermal annealing. Annealing unimplanted
P-based quaternary material at temperatures greater than 500° C caused a blue shift of the exciton peak. At annealing temperatures
greater than 650° C red shifts in the exciton peak of unimplanted Al-based quaternary material were observed. Boron implantation
caused small blue shifts of the exciton peak in both material systems at low annealing temperatures. Much larger blue shifts
were observed in the fluorine implanted samples. 相似文献
9.
Junsaku Nitta Yiping Lin Takaaki Koga Tatsushi Akazaki 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):429
We report on electron g-factor in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor. 相似文献
10.
The microstructure of InxGa1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100)
at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy.
The variations in resultant island morphology and strain as a function of the In content were examined through the comparison
of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island
relaxation process changes for high In content. 相似文献