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1.
M.E. Williams K.-W. Moon W.J. Boettinger D. Josell A.D. Deal 《Journal of Electronic Materials》2007,36(3):214-219
Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic
components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To determine
if interfacial IMC is a requirement for whisker growth, bright Sn and a Sn-Cu alloy were electroplated on a tungsten (W) substrate
that does not form interfacial IMC with the Sn or Cu. At room temperature, conical Sn hillocks grew on the pure Sn deposits
and Sn whiskers grew from the Sn-Cu alloy electrodeposits. These results demonstrate that interfacial IMC is not required
for initial whisker growth. 相似文献
2.
Aditya Kumar Ying Yang Chee C. Wong Vaidhyanathan Kripesh Zhong Chen 《Journal of Electronic Materials》2009,38(1):78-87
The effect of moderate electric current density (1 × 103 to 3 × 103 A/cm2) on the mechanical properties of Ni-P/Sn-3.5Ag/Ni-P and Ni/Sn-3.5Ag/Ni solder joints was investigated using a microtensile
test. Thermal aging was carried out at 160°C for 100 h while the current was passed. The interfacial microstructure and intermetallic
compound (IMC) growth were analyzed. It was found that, at these levels of current density, there were no observable voids
or hillocks. Samples aged at 160°C without current stressing failed mostly inside the bulk solder with significant prior plastic
deformation. The passage of current was found to cause brittle failure of the solder joints and this tendency for brittle
failure increased with increasing current density. Fractographic analysis showed that, in most of the electrically stressed
samples, fracture occurred at the interface region between the solder and the joining metals. The critical current density
that caused brittle fracture was about 2 × 103 A/cm2. Once brittle fracture occurred, the tensile toughness, defined as the energy per unit fractured area, was usually lower
than ~5 kJ/m2, compared with the case of ductile fracture where this value was typically greater than ~9 kJ/m2. When comparing the two types of joint, the brittle failure was found to be more severe with the Ni than with the Ni-P joint.
This work also found that the passage of electric current affects the IMC growth rate more significantly in the Ni than in
the Ni-P joint. In the case of the Ni joint, the Ni3Sn4 IMC at the anode side was appreciably thicker than that formed at the cathode side. However, in the case of electroless Ni-P
metallization, this difference was much smaller. 相似文献
3.
The effect of displacement rate and intermetallic compound (IMC) growth on the shear strength of electroplated Sn-2.5Ag (in wt.%) flip chip solder with Cu under-bump metallization (UBM) were investigated after multiple reflows. Cu6Sn5 IMC was formed at the interface after one reflow. After five reflows, two different IMC layers, consisting of a scallop-shaped Cu6Sn5 phase and a planar Cu3Sn phase, and their thicknesses increased with increasing reflow number up to 10. The shear strengths peaked after four reflows, and then decreased with increasing reflow number. Increasing displacement rate increased the shear force. The tendency toward brittle fracture characteristics was intensified with increasing displacement rate and reflow number. 相似文献
4.
《Microelectronics Reliability》2014,54(9-10):1661-1665
This paper describes the use of in-situ High Temperature Storage Life (HTSL) tests based on a four point resistance method to evaluate Cu wire interconnect reliability. Although the same set up was used in the past to monitor Au–Al ball bond degradation, a different approach was needed for this system. Using conventional statistical methods of failure probability distributions and a fixed failure criterion were found to be unsuitable in this case. Besides this, tests usually take very long until a sufficient percentage of the population have failed according to that criterion. A simple physical model was used to electrically quantify ball bond degradation due to the prevailing failure mechanism in a substantially smaller amount of test time. The method enabled the determination of activation energies for a number of moulding compounds and is extremely useful for a fast screening of such materials regarding their suitability for Cu wire. 相似文献
5.
Ping-Feng Yang Sheng-Rui Jian Yi-Shao Lai Rong-Sheng Chen 《Journal of Electronic Materials》2009,38(6):810-814
Nanotribological characteristics, including the coefficient of friction, wear coefficient, and wear resistance, of Cu6Sn5, Cu3Sn, and Ni3Sn4 intermetallic compounds developed by the annealing of Sn–Cu or Sn–Ni diffusion couples were investigated in this work. The
scratch test conditions combined a constant normal load of 10 mN, 20 mN, or 30 mN and a scratch rate of 0.1 μm/s, 1 μm/s, or 10 μm/s. Experimental results indicated that, as the normal load increases, the pile-up grows taller and the scratch deepens,
leading to a greater coefficient of friction and wear coefficient, and reduced wear resistance. Moreover, the scratch rate
does not have a significant effect on the nanotribological characteristics except for those of Cu6Sn5 and Cu3Sn under a normal load of 10 mN. Though the hardness of Cu6Sn5, Cu3Sn, and Ni3Sn4 is similar, Ni3Sn4 appears to be more prone to wear damage. 相似文献
6.
PCB广泛用于集成电路生产业的各个方面,汽车发动机用PCB要求较高的可靠性。面对热循环失效的汽车动力系统的构件,不要急于取下所有元件,应先对失效点表面进行外观检查和EDX分析,再进行带元件的切片分析和SEM分析,确认各个点的IMC是否正常,以找出真正的失效原因。 相似文献
7.
This work summarizes the interfacial reaction between lead-free solder Sn-3.5Ag and electrolessly plated Ni-P metallization
in terms of morphology and growth kinetics of the intermetallic compounds (IMC). Comparison with pure Ni metallization is
made in order to clarify the role of P in the solder reaction. During reflow, the IMCs formed with the Ni-P under-bump metallization
(UBM) exist in chunky crystal blocks and small crystal agglomerates, while the ones with the sputtered Ni UBM exhibit uniformly
scallop grains with faceted surfaces. The IMC thickness increases with reflow time following approximately a t1/3 power law for both systems. The IMC growth rate is higher with the Ni-P UBM than the Ni UBM. The thickness of the Ni3Sn4 layer increases linearly with the square root of thermal aging time, indicating that the growth of the IMCs is a diffusion-controlled
process. The activation energy for Ni3Sn4 growth in solid-state reaction is found to be 110 kJ/mol and 91 kJ/mol for the Ni-P and sputtered Ni UBMs, respectively.
Kirkendall voids are detected inside the Ni3P layer in the Sn-3.5Ag/Ni-P system. No such voids are found in the Sn-3.5Ag/Ni system. 相似文献
8.
Investigation of the Phase Equilibria of Sn-Cu-Au Ternary and Ag-Sn-Cu-Au Quaternary Systems and Interfacial Reactions in Sn-Cu/Au Couples 总被引:1,自引:0,他引:1
Yee-Wen Yen Chien-Chung Jao Hsien-Ming Hsiao Chung-Yung Lin Chiapyng Lee 《Journal of Electronic Materials》2007,36(2):147-158
The phase equilibria of the Sn-Cu-Au ternary, Ag-Sn-Cu-Au quaternary systems and interfacial reactions between Sn-Cu alloys
and Au were experimentally investigated at specific temperatures in this study. The experimental results indicated that there
existed three ternary intermetallic compounds (IMCs) and a complete solid solubility between AuSn and Cu6Sn5 phases in the Sn-Cu-Au ternary system at 200°C. No quaternary IMC was found in the isoplethal section of the Ag-Sn-Cu-Au
quaternary system. Three IMCs, AuSn, AuSn2, and AuSn4, were found in all couples. The same three IMCs and (Au,Cu)Sn/(Cu,Au)6Sn5 phases were found in all Sn-Cu/Au couples. The thickness of these reaction layers increased with increasing temperature and
time. The mechanism of IMC growth can be described by using the parabolic law. In addition, when the reaction time was extended
and the Cu content of the alloy was increased, the AuSn4 phase disappeared gradually. The (Au, Cu)Sn and (Cu,Au)6Sn5 layers played roles as diffusion barriers against Sn in Sn-Cu/Au reaction couple systems. 相似文献
9.
Hongbo Xu Mingyu Li Hongtao Chen Yonggao Fu Ling Wang 《Journal of Electronic Materials》2009,38(5):663-669
A novel lead-free bumping technique using an alternating electromagnetic field (AEF) was investigated. Lead-free solder bumps
reflowed onto copper pads through AEF have been achieved. A comparison was conducted between the microstructures of the lead-free
solder joints formed by the conventional thermal reflow and AEF reflow. Keeping the substrate temperature lower than that
of the solder bumps, AEF reflow successfully created metallurgical bonding between the lead-free solders and metallizations
through an interfacial intermetallic compound (IMC). The AEF reflow could be finished in several seconds, much faster than
the conventional hot-air reflow. Considering the morphology of the interfacial Cu6Sn5 IMC, a shorter heating time above the melting point would be a better choice for solder joint reliability. The results show
that AEF reflow is a promising localized heating soldering technique in electronic packaging. 相似文献
10.
The effects of isothermal aging on the microstructure and shear strength of Sn37Pb/Cu solder joints were investigated. Single-lap shear solder joints of eutectic Sn37Pb solder were aged for 1–10 days at 120 °C and 170 °C, respectively, and then loaded to failure in shear with a constant loading speed of 5 × 10−3 mm/s. The growth of the interfacial Cu–Sn intermetallic compounds (IMC) layer (Cu6Sn5 + Cu3Sn) of Sn37Pb/Cu solder joints subjected to isothermal aging exhibited a linear function of the square root of aging time, indicating that the formation of Cu–Sn IMC was mainly controlled by the diffusion mechanism. And the diffusion coefficient (D) values of IMC layer were 1.07 × 10−17 and 3.72 × 10−17 m2/s for aged solder joints at 120 °C and 170 °C, respectively. Shear tests results revealed that as-reflowed solder joint had better shear strength than the aged solder joints and the shear strength of all aged solder joints decreased with increasing aging time. The presence of elongated dimple-like structures on the fracture surfaces of these as-reflowed or aged for short time solder joints were indicative of a ductile failure mode. As aging time further increased, the solder joints fractured in the mixed solder/IMC mode at the solder/IMC interface. 相似文献