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1.
三相全控桥式整流电路实验装置的研制 总被引:2,自引:1,他引:1
介绍了开发三相全控桥式整流电路实验装置的背景;叙述了TC787芯片的内部结构、工作原理、特点及芯片的各个管脚的功能;详细介绍了该实验装置的触发电路的设计思路、设计结果和工作原理;介绍了该实验装置的主电路部分的结构和特点。该实验装置性能可靠,符合本科生实验要求。 相似文献
2.
本文描述一种基于8031单片机和TC8830AF语音处理器的PC机智能语音卡,通过软硬件设计解决了PC-8031-TC8830AF结构中的通讯问题。该语音卡在进行语音的合成、编辑和播放时,仅占用极少的PC机CPU处理时间,能满足计算机系统进行实时语音合成的要求。 相似文献
3.
通过调整Mn的成分,系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质,特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时,对于150nm的Ni81Fe19,得到了最大的交换偏置场175kA/m,同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%;高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化,Mn含量越多,其晶格常数越大;制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni100-xMnx厚度的变化,第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时,Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃,5h退火后,可以有80kA/m的交换偏置场,此时铁磁层磁矩的大小几乎不变.
关键词:
Ni81Fe19/Ni100-xMnx
交换偏置场 相似文献
4.
5.
Christian Erich Zybill Mahmoud Abdel-Hafiez Sami Allam Tharwat El Sherbini 《Progress in Solid State Chemistry》2007,35(2-4):469-480
Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch2. Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular. 相似文献
6.
利用内径为57 mm的压缩气炮,在撞击速度为0.2~1.2 km/s(相应的靶中压力为3~15 GPa)范围内进行对称碰撞实验,以研究TC4(Ti-Al6-V4)钛合金在一维应变冲击压缩条件下的绝热剪切现象。对回收得到的受冲击样品,在扫描电镜(SEM)下进行细观金相分析。结果指出,一维应变冲击压缩条件下,TC4钛合金中绝热剪切带产生的对称碰撞速度阈值为500 m/s(相当于样品中的压力为5.87 GPa);主剪切带与冲击方向约为45°角,带上有圆形和椭圆形两种孔洞且随碰撞速度的增大而增多和长大,这是典型的韧性损伤特征。随碰撞速度增大,产生与主剪切带成15°角的支剪切带。这些与理论预言相符。X射线能谱分析结果指出,剪切带内材料发生了(α+β)→β相的转变,是典型的相变带。剪切带的温度估算与实验提供的信息吻合。 相似文献
7.
Solveig Linko 《Accreditation and quality assurance》2002,7(2):55-59
Internal audits inherently effect quality improvement, and concrete results can be expected by careful planning. As audits
should improve the quality system in situ, the development of audits should not be neglected. ISO/IEC 17025 describes the
objectives of internal audits and management reviews in more detail compared to the former standards EN 45001 and ISO/IEC
Guide 25, although the main features are unchanged. This addresses continuous surveillance of the current practice. A brief
questionnaire on vertical audits was distributed to 74 of 120 employees at a Finnish private medical laboratory, Medix Laboratories
Ltd. A positive feed-back was received from the current management of audits. However, the study revealed that continuous
supervision of audits is needed. Many employees were not willing to perform audits if they had no previous experience. Additionally,
audits performed at the workbench were not considered as the best possible for fruitful discussions.
Received: 20 February 2001 Accepted: 30 November 2001 相似文献
8.
M.M. El-Nahass M.A.M. Seyam H.E.A. El-Sayed A.M. Abd El-Barry 《Applied Surface Science》2006,252(18):6218-6227
Thin films of samples of the glassy SxSe100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system SxSe100−x were discussed. The characteristic temperatures (Tg, Tc and Tm) were evaluated. Dark electrical resistivities, ρ, of SxSe100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations. 相似文献
9.
《Surface and interface analysis : SIA》2005,37(8):683-688
Heating (100) silicon at high temperature (say, higher than 850 °C) in H2, cooling to 670–700 °C in the same ambient, and quenching to room temperature in N2 results in environmentally robust, terraced 1 × 1 (100) SiH2. Evidence for this conclusion is based on angle‐resolved x‐ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high‐energy electron diffraction. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
10.
A hybrid approach combining energy density analysis with the interaction energy decomposition method
We propose a new analysis technique for characterizing molecular interactions that combines an energy decomposition scheme, such as the Kitaura-Morokuma decomposition method, with energy density analysis, which partitions the total energy of the system into atomic contributions. The combined scheme, termed Interaction-EDA, enables us to estimate the local contribution of interaction energy components, such as electrostatic, exchange, polarization, and charge transfer. The evaluation of the local interaction energy is rather important in large systems. For a numerical assessment, the Interaction-EDA method is applied to the process of CO adsorption on Si(100) - (2 x 1) surface. 相似文献