全文获取类型
收费全文 | 8956篇 |
免费 | 1081篇 |
国内免费 | 1063篇 |
专业分类
化学 | 4209篇 |
晶体学 | 1171篇 |
力学 | 497篇 |
综合类 | 103篇 |
数学 | 1372篇 |
物理学 | 2394篇 |
无线电 | 1354篇 |
出版年
2024年 | 11篇 |
2023年 | 103篇 |
2022年 | 169篇 |
2021年 | 248篇 |
2020年 | 254篇 |
2019年 | 205篇 |
2018年 | 175篇 |
2017年 | 265篇 |
2016年 | 398篇 |
2015年 | 341篇 |
2014年 | 486篇 |
2013年 | 579篇 |
2012年 | 653篇 |
2011年 | 674篇 |
2010年 | 585篇 |
2009年 | 627篇 |
2008年 | 655篇 |
2007年 | 680篇 |
2006年 | 602篇 |
2005年 | 495篇 |
2004年 | 481篇 |
2003年 | 381篇 |
2002年 | 256篇 |
2001年 | 213篇 |
2000年 | 250篇 |
1999年 | 177篇 |
1998年 | 178篇 |
1997年 | 153篇 |
1996年 | 116篇 |
1995年 | 97篇 |
1994年 | 88篇 |
1993年 | 69篇 |
1992年 | 72篇 |
1991年 | 73篇 |
1990年 | 52篇 |
1989年 | 33篇 |
1988年 | 38篇 |
1987年 | 18篇 |
1986年 | 18篇 |
1985年 | 23篇 |
1984年 | 18篇 |
1983年 | 11篇 |
1982年 | 7篇 |
1981年 | 12篇 |
1980年 | 8篇 |
1979年 | 9篇 |
1978年 | 7篇 |
1977年 | 9篇 |
1975年 | 6篇 |
1974年 | 9篇 |
排序方式: 共有10000条查询结果,搜索用时 578 毫秒
1.
Recently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS2 on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals. 相似文献
2.
In this work, ZnO nanostructures are electrodeposited on a transparent conducting glass from chloride baths. The influence of H2O2 concentration on the electrochemical characteristics has been studied using cyclic voltammetry (CV) and chronoamperometry (CA) techniques. From the analysis of the current transients on the basis of the Scharifker–Hills model, it is found that nucleation mechanism is progressive with a typical three-dimensional (3D) nucleation and growth process; independently with the concentration of H2O2. However, the nucleation rate of the ZnO changes with the increase of H2O2 concentration. The Mott–Schottky measurements demonstrate an n-type semiconductor character for all samples with a carrier density varying between 5.14×1018 cm−3 and 1.47×1018 cm−3. Scanning electron microscopy (SEM) observations show arrays of vertically aligned ZnO nanorods (NRs) with good homogeneity. The X-ray diffraction (XRD) patterns show that the ZnO deposited crystallises according to a hexagonal Würtzite-type structure and with the c-axis perpendicular to the electrode surface. The directional growth along (002) crystallographic plane is very important for deposits obtained at 5 and 7 mM of H2O2. The high optical properties of the ZnO NRs with a low density of deep defects was checked by UV–vis transmittance analyses, the band gap energy of films varies between 3.23 and 3.31 eV with transparency around 80–90%. 相似文献
3.
4.
Savita Verma Deepak M. Maher Samadhan S. Nagane Bhausaheb V. Tawade Prakash P. Wadgaonkar 《Journal of polymer science. Part A, Polymer chemistry》2019,57(5):588-597
New aromatic (co)polyesters containing pendant propargyloxy groups were synthesized by phase transfer‐catalyzed interfacial polycondensation of 5‐(propargyloxy)isophthaloyl chloride (P‐IPC) and various compositions of P‐IPC and isophthaloyl chloride with bisphenol A. FTIR and NMR spectroscopic data, respectively, revealed successful incorporation of pendant propargyloxy groups into (co)polyesters and formation of (co)polyesters with desired compositions. (Co)polyesters exhibited good solubility in common organic solvents such as chloroform, dichloromethane, and tetrahydrofuran and could be cast into transparent, flexible, and tough films from chloroform solution. Inherent viscosities and number average molecular weights of (co)polyesters were in the range 0.77–1.33 dL/g and 43,600–118,000 g/mol, respectively, indicating the achievement of reasonably high‐molecular weights. The 10% weight loss temperatures of (co)polyesters were in the range 390–420 °C, demonstrating their good thermal stability. (Co)polyesters exhibited Tg in the range 146–170 °C and Tg values decreased with increase in mol % incorporation of P‐IPC. The study of non‐isothermal curing by DSC indicated thermal crosslinking of (co)polyesters via propargyloxy groups. The utility of pendant propargyloxy group was demonstrated by post‐modification of the selected copolyester with 1‐(4‐azidobutyl)pyrene, 9‐(azidomethyl)anthracene, and azido‐terminated poly(ethyleneglycol) monomethyl ether via copper(I)‐catalyzed Huisgen 1,3‐dipolar cycloaddition reaction. FTIR and 1H NMR spectra confirmed that click reaction was quantitative. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2019 , 57, 588–597 相似文献
5.
6.
电子产品研制阶段可靠性增长试验研究 总被引:1,自引:0,他引:1
结合工程实际经验,深入讨论了可靠性增长过程及实现途径,在保持试验条件和改进过程不变的条件下,实施了对具体型号电子产品的可靠性增长试验,达到了预期的可靠性增长目标,并且利用可靠性增长试验的数学模型(AMSAA模型)来评估产品的可靠性增长,对开展可靠性增长与可靠性增长试验工作具有重要的实际意义. 相似文献
7.
8.
Woo‐Seok Cheong 《ETRI Journal》2003,25(6):503-509
Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating. 相似文献
9.
This paper reports that the growth of RuOx(110) thin layer growth on Ru(0001)
has been investigated by means of scanning tunnelling microscope (STM). The STM
images showed a domain structure with three rotational domains of RuOx(110)
rotated by an angle of 120℃.
The as-grown RuOx(110) thin layer is expanded from the bulk-truncated
RuOx(110) due to the large mismatch between RuOx(110) and the
Ru(0001) substrate. The results also indicate that growth of RuOx(110)
thin layer on the Ru(0001) substrate by oxidation tends first to formation
of the Ru-O (oxygen) chains in the [001] direction of RuOx(110). 相似文献
10.
The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under
two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100)
fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution.
The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling
factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that
all factors necessary for abnormal (100) growth are present in the films. 相似文献