Direct Addition of Amides to Glycals Enabled by Solvation‐Insusceptible 2‐Haloazolium Salt Catalysis

The direct 2‐deoxyglycosylation of nucleophiles with glycals leads to biologically and pharmacologically important 2‐deoxysugar compounds. Although the direct addition of hydroxyl and sulfonamide groups have been well developed, the direct 2‐deoxyglycosylation of amide groups has not been reported to date. Herein, we show the first direct 2‐deoxyglycosylation of amide groups using a newly designed Brønsted acid catalyst under mild conditions. Through mechanistic investigations, we discovered that the amide group can inhibit acid catalysts, and the inhibition has made the 2‐deoxyglycosylation reaction difficult. Diffusion‐ordered two‐dimensional NMR spectroscopy analysis implied that the 2‐chloroazolium salt catalyst was less likely to form aggregates with amides in comparison to other acid catalysts. The chlorine atom and the extended π‐scaffold of the catalyst played a crucial role for this phenomenon. This relative insusceptibility to inhibition by amides is more responsible for the catalytic activity than the strength of the acidity.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

基于FPGA的ASI信号接收与发送的实现

提出了一种用FPGA芯片代替Cypress公司的CY78933和CY78923芯片来实现ASI信号接收与发送的方案，详细阐述了DVB—ASI接口的硬件组成与FPGA实现，该接口符合DVB—ASI的接口规范，可实现270Mbps的信号传输，已经得到实际运用。     

Double Michael Additions of Lithium Enolate of 1,4-Dioxaspiro[4.5]dec-6-en-8-One to Acrylates

Double Michael additions of lithium enolaie of 1,4-dioxaspiro[4.5]dec-6-en-8-one to four acrylates afforded bicyclo[2.2.2]octan-2-ones with high regio- and stereoselectivities in moderate yields.     

Schwinger boson mapping of SO(8) fermion model

The Schwinger representation of the SO(8) fermion pair algebra in terms ofd and quasispin vector (u, s, v) bosons is used in deriving a microscopic boson coherent state having both particle-hole and pair excitations. The coherent state is the exact boson image of the HFB variational solution. We can study the shape phase transition and pairing behaviour of the nuclear ground states using the coherent states.     

Spontaneous magnetization of the Ising model on a 4–8 lattice

The spontaneous magnetization of the Ising model on a 4–8 lattice with six different coupling constants and two different magnetic moments is studied. A formula for the spontaneous magnetization is proposed. The result agrees with the exact low-temperature series expansions up to the 12th order.     

识别过渡金属离子的1,8-萘二甲酰亚胺多胺衍生物荧光传感器的研究

设计合成了用以检测过渡金属离子的荧光化学敏感器体系,它们是由1,8-萘二酰亚胺为荧光团,多胺衍生物为金属离子受体组成．在室温下对其光物理性质的研究中发现,在没有加入过渡金属离子时,由于体系内存在有效的光诱导电子转移过程使得荧光团的荧光被淬灭．加入过渡金属离子后,金属离子受体中的氮原子和过渡金属离子之间的配位作用阻断了光诱导电子转移过程,体系的荧光增强．不同的金属离子受体表现出了和过渡金属离子不同的配位识别能力,并且通过荧光的变化传递出受体-金属离子作用的信息．     

The Calibrating Theory in the Network Parameters Measurement of Microwave and MMW Devices

The paper introduces a special system calibration technology in s-parameters measurement of microwave and millimeter wave devices. The 8-term errors module is built by analyzing the signals flowing in the measurement system. Then the calibration technology using non-standard kits is designed on the base. Finally, the experiment using the calibration technology is introduced.