贝克曼AllegraTM21R型超高速离心机故障排除一例

贝克曼Allegra^TM 21R型超高速离心机开机后，操作面板上出现错误代码“28”，离心机不旋转。离心机的电机采用无刷感应驱动，由电机驱动电源模块BSMl0GD60DN2驱动离心机的电机。故障是由于电源模块BSMl0GD60DN2损坏引起的。采用东芝三相桥式IGBT电源模块MG25Q6ES42代替BSMl0GD60DN2，并更换已烧毁的栅极电阻后。开机试验，仪器恢复正常。     

Graded Heterojunction of AIGalnP High-brightness Light Emitting Diodes

A simple model of the graded heterojunction in AIGalnP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities. Through the experiments, it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.     

SOI全介质隔离与高频互补双极兼容工艺

ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径，从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。     

CMOS电路中抗Latch-up的保护环结构研究

闩锁是CMOS集成电路中的一种寄生效应,这种PNPN结构一旦被触发,从电源到地会产生大电流,导致整个芯片的失效。针对芯片在实际测试中发现的闩锁问题,介绍了闩锁的测试方法,并且利用软件Tsuprem4和Medici模拟整个失效过程,在对2类保护环(多子环/少子环)作用的分析,以及各种保护结构的模拟基础之上,通过对比触发电压和电流,得到一种最优的抗Latch up版图设计方法,通过进一步的流片、测试,解决了芯片中的闩锁失效问题,验证了这种结构的有效性。     

一种基于能带工程设计的CaAsSb/InP异质结双极晶体三极管

异质结晶体三极管（HBT）的性能与其材料体系密不可分，利用能带工程可以大大优化器件的结构，提高器件性能，文章从分析HBT的能带结构及设计要求入手，介绍了一种利用能带工程设计的基于GaAsSb/InP材料体系的新型HBT器件的结构及其性能，分析了该器件与其它材料体系器件相比所具有的优异特性，说明了对HBT的各区材料，其带边的相对位置所起的重要作用，最后，文章还报道了近期的实验情况，说明了GaAsSb/InP体系HBT的实际性能与理论预言一致。     

Fast and Compact 16 by 16 Cellular Neural Network Implementation

The paper presents a Cellular Neural Network implementation based on a high gain sigmoid operation. The required simplifications to the original theory are described that allow the use of high gain. With this design black and white images can be processed. The basic building blocks in a cell are described. A 16×16 cells network has been designed and processed with 1.2 micron CMOS technology. Measurement results which show the operation of the network are presented.     

全双极WTA模型的改进及其实现

提出了一种相似度的新定义，使双极ＷＡＴ模型的实现更加简洁明了。增加一个阈值使系统能判别非存储模式或因其信息量过低而无法鉴定的输入模式，阈值的大小与要求的容错能力有关。双极相似度及阈值通过光学方法实现。阈值的光学实现使系统仍具有照明不变性。通过电路实现取及ＷＴＡ网络的迭代运算。     

动态分频器技术

本文介绍了动态分频器的基本原理；详细叙述了动态分频器电路及其主要工艺技术；综述了国外动态分频器的发展动态。     

Fabrication of isotype (p-p) selenium-polyaniline heterojunction diode by electrochemical method

In the present work, for the first time, heterojunction has been fabricated using electrochemically deposited isotype p-selenium-p-polyaniline from a single solution bath. The structural characterization of selenium and polyaniline thin film was carried out using XRD technique. Polyaniline exhibited amorphous structure while selenium offered monoclinic (β) phase. The junction was formed by electrodepositing polyaniline over selenium film and heating at 423 K. The current density versus voltage (J-V) plot showed the formation of a junction with ideality factor of 1.16. From J-V characteristics at different temperatures, static resistance (R_s), dynamic resistance (R_d), and rectification ratio of diodes were determined. Heat treatment above 448 K caused junction breakdown.     

First example of the formation of bipolar spiro σ-complexes from 6-bromo-5,7-dinitrobenzo[e]-1,2,3,4-tetrazine 1,3-di-N-oxide

The reactions of 3,5,7-trimethyltropolone and 2-(N-benzylamino)tropone with 6-bromo-5,7-dinitrobenzo[e]-1,2,3,4-tetrazine 1,3-di-N-oxide afforded novel bipolar spiro -complexes. The kinetic and activation parameters of the R,S-enantiotopomerization of a chiral spiro -complex of 2-(N-benzylamino)tropone were determined using dynamic ¹H NMR spectroscopy.