Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

Comparison of growth stress measurements with modelling in thin iron oxide films

High temperature oxidation of metals leads to residual stresses both in the metal and in the growing oxide. In this work, the evolution of this residual stresses is theoretically predicted in the growing oxide layers. The origin of these stresses is based on a microstructural model. Using experimental results providing from the oxidation kinetics, and an analysis proposed to describe the growth strain occurring in the thin layers, a set of equations is established allowing determining the stresses evolution with oxidation time. Then, the model is compared with experimental results obtained on both α-Fe and phosphated α-Fe, oxidised at different temperatures. Numerical data are extracted from experiments either with an asymptotic formulation or with an inverse method. These two methods give good agreement with experiments and allow extracting the model parameters.     

具有控制系数的高阶线性微分方程复振荡的一个结果

该文考虑具有控制系数 A\-0 和系数仅有有限个极点的高阶线性齐次微分方程（1.1）。得到了一个复振荡结果，该结果是J. K. Langley［11］等作者在整系数下相应结果的推广。     

Cavitation mechanism in cyanobacterial growth inhibition by ultrasonic irradiation

To prevent cyanobacterial bloom in eutrophic water by ultrasonic method, ultrasonic irradiations with different parameters were tested to inhibit Spirulina platensis from growth. The experimental result based on cyanobacterial growth, chlorophyll a and photosynthetic activity showed that, the ultrasonic irradiation inhibited cyanobacterial proliferation effectively, furthermore the inhibition effectiveness increased in the order: 200 kHz>1.7 MHz>20 kHz and became saturated with the increased power. The inhibition mechanism can be mainly attributed to the mechanical damage to the cell structures caused by ultrasonic cavitation, which was confirmed by light microscopy and differential interference microscopy. The optimal frequency of 200 kHz in cavition and sonochemistry was also most effective in cyanobacterial growth inhibition. The higher frequency of 1.7 MHz is weaker than 20 kHz in cavitation, but has more effective inhibition because it is nearer to the resonance frequency of gas vesicle. The inhibition saturation with ultrasonic power was due to the ultrasonic attenuation induced by the acoustic shielding of bubbles enclosing the radiate surface of transducer.     

半导体衬底片的应力损伤及其行为

本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。特别是,讨论了在 GaAs、InP 衬底中,产生于切片、研磨和抛光加工过程中的机械损伤的影响。     

激光辐照对不同饵料微藻生长的影响

利用Nd:YAG激光(波长1.06μm,功率5W,照射时间0.5-3min)和Ar 激光(波长:488nm,功率70mw,照射时间5-20min)分别照射角毛藻和叉鞭金藻,辐照后进行细胞增殖和生长速率的测定。实验结果表明:照射剂量为1min的Nd:YAG激光及剂量为5min的Ar 激光对叉鞭金藻有较明显的促长效果,这两种激光处理组的细胞增殖量在辐照后的两天内较对照组分别高42.9%和48.1%,但这种促长效果随时间的推移逐渐消失。不同剂量的两种激光辐照角毛藻后,在延滞期均出现生长抑制现象,但进入指数生长期或传代培养后,剂量为1min的Nd:YAG激光及剂量为10min的Ar 激光对角毛藻有明显的促长效果,其中在指数生长期1min剂量的Nd:YAG激光处理可促长27.0%,传代培养后10min的Ar 激光处理组生长速率提高达51.2%。本文对不同激光及不同激光参数条件下,两种饵料藻的耐受性及生长特性的差异也进行分析探讨。本实验结果不仅证实了已有研究的推论,还展示出激光技术在饵料藻种选育中的应用前景。     

Semigroups of matrices of intermediate growth

Finitely generated linear semigroups over a field K that have intermediate growth are considered. New classes of such semigroups are found and a conjecture on the equivalence of the subexponential growth of a finitely generated linear semigroup S and the nonexistence of free noncommutative subsemigroups in S, or equivalently the existence of a nontrivial identity satisfied in S, is stated. This ‘growth alternative’ conjecture is proved for linear semigroups of degree 2, 3 or 4. Certain results supporting the general conjecture are obtained. As the main tool, a new combinatorial property of groups is introduced and studied.     

Long range one-dimensional ordering of lead phthalocyanine monolayer on InSb(1 0 0) (4 × 2)/c(8 × 2)

Sub-monolayer and monolayer of lead phthalocyanine deposited on InSb(1 0 0) (4 × 2)/c(8 × 2) surface have been investigated by scanning tunneling microscopy and low energy electron diffraction. Molecules first adsorb on the indium rows of the (4 × 2)/c(8 × 2) structure in the [1 1 0] direction and diffuse at the surface in order to form two-dimensional islands. The molecule-substrate interaction stabilizes the PbPc molecules on the In rows. It weakens the interaction between molecules located in adjacent rows resulting in numerous gliding planes between the molecular chains, in the direction parallel to the rows. At monolayer completion, a long-range one-dimensional order is adopted by the molecules in the [1 1 0] direction.     

CuPc molecules adsorbed on Au(1 1 0)-(1 × 2): growth morphology and evolution of valence band states

We present the growth morphology, the long-range ordering, and the evolution of the valence band electronic states of ultrathin films of copper phthalocyanine (CuPc) deposited on the Au(1 1 0)-(1 × 2) reconstructed surface, as a function of the organic molecule coverage. The low energy electron diffraction patterns present a (5 × 3) reconstruction from the early adsorption stages. High-resolution UV photoelectron spectroscopy data show the disappearance of the Au surface states related to the (1 × 2) reconstruction, and the presence of new electronic features related to the molecule-substrate interaction and to the CuPc molecular states. The CuPc highest occupied molecular orbital gradually emerges in the valence band, while the interface electronic states are quenched, upon increasing the coverage.     

在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。