全文获取类型
收费全文 | 1370篇 |
免费 | 266篇 |
国内免费 | 156篇 |
专业分类
化学 | 382篇 |
晶体学 | 38篇 |
力学 | 1篇 |
综合类 | 1篇 |
数学 | 5篇 |
物理学 | 920篇 |
无线电 | 445篇 |
出版年
2024年 | 8篇 |
2023年 | 43篇 |
2022年 | 21篇 |
2021年 | 35篇 |
2020年 | 51篇 |
2019年 | 31篇 |
2018年 | 33篇 |
2017年 | 49篇 |
2016年 | 60篇 |
2015年 | 49篇 |
2014年 | 39篇 |
2013年 | 88篇 |
2012年 | 65篇 |
2011年 | 92篇 |
2010年 | 59篇 |
2009年 | 143篇 |
2008年 | 148篇 |
2007年 | 126篇 |
2006年 | 84篇 |
2005年 | 60篇 |
2004年 | 51篇 |
2003年 | 37篇 |
2002年 | 88篇 |
2001年 | 55篇 |
2000年 | 49篇 |
1999年 | 21篇 |
1998年 | 36篇 |
1997年 | 20篇 |
1996年 | 19篇 |
1995年 | 18篇 |
1994年 | 26篇 |
1993年 | 19篇 |
1992年 | 18篇 |
1991年 | 8篇 |
1990年 | 11篇 |
1989年 | 4篇 |
1988年 | 8篇 |
1987年 | 1篇 |
1986年 | 1篇 |
1985年 | 4篇 |
1984年 | 1篇 |
1981年 | 1篇 |
1980年 | 1篇 |
1979年 | 3篇 |
1976年 | 3篇 |
1975年 | 2篇 |
1974年 | 2篇 |
1973年 | 1篇 |
排序方式: 共有1792条查询结果,搜索用时 15 毫秒
1.
In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer. 相似文献
2.
3.
D.E. ShalómH. Pastoriza 《Solid State Communications》2003,126(7):379-383
We present kinetic inductance measurements in current driven Josephson junction arrays. Measurements performed with circular coils indicate that this technique is very sensitive to the vortex mobility. Results obtained with anisotropic detection coils provide experimental evidence for the anisotropic response of a driven vortex lattice. Anisotropic behavior is obtained when rising the temperature or the mean vortex velocity as indicated by the loss of the superconducting shielding capability, first in the direction of vortex motion and then in the perpendicular direction. 相似文献
4.
M. Sanganeria D. T. Grider M. C. öztürk J. J. Wortman 《Journal of Electronic Materials》1992,21(1):61-64
In-situ doped polycrystalline SixGe1-x
(x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH2Cl2, GeH4 and B2H6 in a H2 carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C
and different B2H6 flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible
effect of B2H6 flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole.
Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates
and higher B2H6 flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature
range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved
during the deposition process. The results indicate that polycrystalline SixGe1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon. 相似文献
5.
R. D. Dupuis J. C. Bean J. M. Brown A. T. Macrander R. C. Miller L. C. Hopkins 《Journal of Electronic Materials》1987,16(1):69-77
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical
vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge
and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied,
the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal
X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission
electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial
layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth
of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of
a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped
AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates. 相似文献
6.
7.
The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI. 相似文献
8.
9.
荧光法研究Ge-132对牛血清白蛋白Maillard反应的抑制作用 总被引:2,自引:0,他引:2
人体内氨基酸及蛋白质的非酶糖化反应(Maillard反应)与糖尿病及其并发症的关系已经引起广泛注意[1].有机锗化合物β-羧乙基锗倍半氧化物(Ge-132)具有预防糖尿病及调节糖代谢的作用[2]. 相似文献
10.
The new layered ternary compound Nb3GexTe6 (x ? 0.90) was prepared by direct combination of the elements taken in the stoichiometric proportions 3 : 1 : 6, heated at 1 000 °C for 10 days in silica tubes and quenched to room temperature. The phase crystallizes in the orthorhombic symmetry, space group Pnma (#62), with the following single crystal refined parameters: a = 643.18(5) pm, b = 1391.98(11)pm and c = 1 154.07(5) pm, with Z = 4. The structure was refined to an R of 3.4% (Rw = 4.6%), with 1969 independent reflexions and 49 parameters. The structure is based on the close stacking of trigonal prismatic (TP) slabs in the AA/BB mode. The slabs can be seen as built up from face sharing biprisms, which are filled either by one or by two niobium cations situated in the middle of the trigonal prisms. The germanium is located in the middle of the common face of two prisms, leading to a rather unusual anionic square coordination. The refinements showed that this latter cation does not fill completely its square site. No cation was found in the van der Waals gap between the slabs. The mean dGe? Te distance (276.5 pm) is in agreement with GeII cations, while some Te …? Te distances (from 333.84 to 361.65pm) are too short for anions in a simple contact. These bonding distances, already mentionned in some MTe2 compounds, are to be ascribed to charge transfer in the structure, with a partial oxidation state for the tellurium anions. Short Nb? Nb and Nb? Ge distances (292.0 and 281.3 pm, respectively) imply intercationic bonding within the slabs. 相似文献