2020年电子电路技术热点

文章归纳了2020年电子电路产业一些技术热点,主要有5G电路板设计和基材,制造方面半加成法、3D打印、直接金属化孔电镀和垂直互连结构等技术,以及集成电路封装载板技术。     

Novel halogenated cyclopentasilylene-2,4-dienes via DFT

In view of immense importance of silylenes and the fact that their properties undergo significant changes on substitution with halogens, here, we have used B3LYP/6-311++G** level of theory to access the effects of 1–4 halogens (X = F, Cl, Br, and I) on four unprecedented sets of cyclopentasilylene-2,4-dienes; with the following formulas: SiC₄H₃X ( 1 _X ), SiC₄H₂X₂ ( 2 _X ), SiC₄HX₃ ( 3 _X ), and SiC₄X₄ ( 4 _X ). In going down from F to I, the singlet (s)-triplet (t) energy gap (ΔE_s-t, a possible indication of stability), and band gap (ΔE_H-L) decrease while nucleophilicity (N), chemical potential (μ), and proton affinity (PA) increase. The overall order of N, μ, and PA for each X is 2 _X > 1 _X > 3 _X > 4 _X . Precedence of 2 _X over 1 _X is attributed to the symmetric cross conjugation in the former. The highest and lowest N are shown by 2 _I and 4 _F . The trend of divalent angle () for each X is 4 _X > 1 _X > 3 _X > 2 _X . The results show that in going from electron withdrawing groups (EWGs) to electron donating groups (EDGs), the ΔE_s-t and ΔE_H-L decrease while N, μ, and PA increase. Also, rather high N of our scrutinized silylenes may suggest new promising ligands in organometallic chemistry.     

Optical Properties of One-dimensional Three-component Photonic Band Gap Structure

1　IntroductionMaterialswithPhotonicBandGaps (PBG’s)havebeenwidelystudiedboththeoreticallyandex perimentallyinthepastfew years[1～ 4] .Theexis tenceofgaps,which prohibitthepropagationofelectromagnetic (EM )wavesinacertainrangeoffrequencies,canhavesignificantimpactsbothinsci enceandtechnology .Manypracticalapplicationsofthesestructureshavebeensuggestedanddemon strated ,suchasPhotonicCrystal (PC)microcavi ties[5] ,infraredPC[6] ,PClens[7] ,suppressingspontaneousemission ,manipulatinglight…     

低插损窄带型10.7MHz压电陶瓷滤波器的研制

介绍了低插损窄带型10.7 MHz压电陶瓷滤波器的一种设计制作方法。结合压电陶瓷能陷模理论,通过对滤波器分割电极设计和制造工艺控制技术的研究,强调了工艺控制的重要性。产品达到日本村田同类产品水平,对国产化窄带型10.7 MHz压电陶瓷滤波器的研发和生产具有十分重要的意义。认为选用高Qm值压电陶瓷材料、分割电极和耦合电容的设计、焊接和点蜡工艺的控制等是研制低插损窄带型10.7 MHz压电陶瓷滤波器的重点。     

A New Comb Circular Polarizer Suitable for Millimeter‐Band Application

This letter presents a new polarizer which has a simple comb structure inside a circular waveguide. The electrical performance of the proposed comb polarizer is optimized by a circular waveguide radius and by the physical parameters of the comb plates. This polarizer is suitable for providing good performance in millimeter‐band application because of its simple structure and low fabrication cost. In our experiments the dual‐band comb polarizer designed in band 1(K) and band 2(Ka) showed good electrical performance without any tuning elements.     

雷达电子战自适应捷变频对抗技术研究

介绍了雷达自适应变频抗干扰技术,分析了与之相对应的干扰技术,并对雷达自适应变频对抗效果度量问题进行了研究。     

机抖激光陀螺抖动机构的温度特性的研究

研究了机抖激光陀螺抖动偏频量与温度之间的关系。通过大量的重复性高低温实验,证明了抖动偏频量与温度的线性关系,并得到了拟合直线表达式。结果表明,抖动偏频量与温度具有较好的线性关系,而且具有较好的重复性。同时用抖动偏频量对陀螺的零漂进行补偿,提高了陀螺的精度。     

IEEE 802.11g性能分析及应用

全面介绍IEEE802.11g标准的无线局域网,详细讲述IEEE802.11g草案标准的概念、产生背景、特点、构件及其体系结构和发展前景,探讨实现IEEE802.11gWLAN所需的关键技术及其双频多模应用方式,同时分析IEEE802.11g标准的网络性能。     

反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

超低频信号的记录与回放

介绍一种经济实用的用普通磁带记录与回放超低频信号的方法，该方法在地质，建筑工程和医疗等行业中有一定的实用价值。