Polarization inscription in ferroelectric (111) PZT and (100) SBT films

Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch². Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular.     

Photoswitching of Ferroelectric Liquid Crystals Using Unsymmetrical Chiral Thioindigo Dopants: Photoinduced Inversion of the Sign of Spontaneous Polarization

A new unsymmetrical chiral thioindigo dopant 6‐[(R,R)‐2,3‐difluorooct‐1‐yloxy]‐5′‐nitro‐6′‐[(R)‐2‐octyloxy]thioindigo ( 4 ) designed to photoinvert the sign of spontaneous polarization (P_S) in a ferroelectric chiral smectic C (SmC*) liquid crystal was prepared using a synthetic approach previously developed in our laboratory. In this new “ambidextrous” design, the (R)‐2‐octyloxy side‐chain is sterically coupled to the thioindigo core and induces a positive P_S, whereas the (R,R)‐2,3‐difluorooctyloxy side‐chain is decoupled from the core and induces a larger negative P_S. In the trans form, this dopant induces a negative polarization in the SmC host (+)‐4‐(4‐methylhexyloxy)phenyl 4‐decyloxybenzoate ( PhB ). Irradiation of a 1 mol‐% mixture of 4 in PhB at λ = 510 nm caused a sign inversion of P_S, from –0.88 to +0.42 nC cm^–2 at T – T_C = –5 °C, which is consistent with an increase in the polarization power of the coupled 2‐octyloxy/thioindigo unit over that of the 2,3‐difluorooctyloxy unit, due to the increase in transverse dipole moment of the thioindigo core upon trans–cis photoisomerization. The P_S sign inversion was confirmed by a surface‐stabilized ferroelectric liquid crystal photoswitching experiment. Spectroscopic measurements on films of the doped liquid crystal mixtures showed that trans–cis photoisomerization is gradually suppressed with increasing dopant mole fraction, possibly as a result of increased dopant aggregation.     

Spectral studies on VO ions in potassium thiourea bromide single crystals using EPR and optical absorption spectroscopy

Electron paramagnetic resonance (EPR) studies have been carried out on VO²⁺ ions doped in single crystals of ferroelectric material, potassium thiourea bromide (PTB) at room temperature and in the temperature range 103–343 K on X-band MW frequency. An isotropic octet spectrum characteristic of VO²⁺ ion was obtained due to the fast re-orientation of the VO²⁺ in PTB lattice, which exhibits glassy nature at certain range around room temperature. The temperature dependant EPR spectra of VO²⁺ ions in this host lattice has been attributed to the occurrence of multiple phase transitions due to the combined environment effects of KBr and thiourea materials in the single crystal. From the optical absorption spectrum, the crystal field splitting parameter Dq, tetragonal parameters Ds and Dt have been evaluated and discussed.     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Ferroelectric perovskite-type barium copper niobate: BaCu1/3Nb2/3O3

A perovskite-type BaCu_1/3Nb_2/3O₃ was prepared by high temperature reaction using BaCO₃, CuO and Nb₂O₅. The X-ray powder diffraction pattern of this compound was indexed with the tetragonal cell with the lattice parameters of a=4.0464(4) and c=4.1807(4) Å (c/a=1.033). This compound had the tetragonal perovskite-type structure in which the B site was occupied statistically by Nb and Cu atoms. From high temperature X-ray powder diffraction patterns this compound had a phase transition from the tetragonal to cubic symmetry in the temperature range of 500-600 °C. The P-E and S-E hysteresis loops occurred at room temperature and the apparent maximum in the temperature dependence of the dielectric constant was observed at 520 °C. The temperature dependence of the inverse of magnetic susceptibility exhibited paramagnetic behavior.     

Structure and properties of (1−x)(0.6Pb(Zn1/3Nb2/3)O3-0.4Pb (Mg1/3Nb2/3)O3)-xPbTiO3 thin films with perovskite phase promoted by polyethylene glycol

The preferential formation of a pyrochlore structure is a knotty problem in the preparation of Pb(Zn_1/3Nb_2/3)O₃ (PZN)-based thin film materials and its presence is significantly detrimental to the dielectric and piezoelectric properties. In this study, 40 mol% of PZN was replaced with Pb(Mg_1/3Nb_2/3)O₃ (PMN) for obtaining a perovskite composition around a morphotropic phase boundary (MPB), (1−x)(0.6PZN-0.4PMN)-xPT ((1−x)PZMN-xPT, PT: PbTiO₃) where x = 0.23. The thin films with this composition were prepared with a polyethylene glycol (PEG) modi-fied sol-gel method on LaAlO₃ substrates. The microstructural evolution of the films on heat treatment was examined with X-ray diffraction. With the aid of PEG, the formation of the pyrochlore phase was suppressed and the perovskite phase formed directly from the amorphous gel film. The multilayer films with a thickness around 0.25 μm showed a single perovskite phase without any detectable pyrochlore structure. Microscopic images showed uniform grain size of a few tens of nanometers. The role of the polymer dramatically promoting the perovskite phase was investigated with the aid of X-ray photoelectron spectroscopy and thermal analysis. The dielectric constant of the obtained film was 4160 at 1 kHz. The film demonstrated typical ferroelectric hysteresis loops and exhibited excellent piezoelectric performance.     

Temperature dependence of transfer characteristics of OTFT memory based on DNA-CTMA gate dielectric

A nonvolatile memory based on an organic thin-film transistor (OTFT) with a biopolymer of DNA-cetyltrimethylammonium chloride (DNA-CTMA) acting as the gate dielectric layer was fabricated. The transfer characteristics of the device prepared by both DNA alone and DNA-CTMA showed a very large and stable hysteresis. In order to analyze the memory mechanism, the temperature dependence of the transfer characteristics, electric conductivity, differential scanning calorimetry (DSC), thermally stimulated depolarization current (TSDC) as well as the dielectric property of the DNA-CTMA film have been investigated. As a result, the quasi-ferroelectric polarization originating from the alignment of the intrinsic dipole moment inside the DNA-CTMA complex was identified as the main source of hysteresis in the lower temperature region.     

Effect of B-site isovalent doping on electrical and ferroelectric properties of lead free bismuth titanate ceramics

In the present work, zirconium modified bismuth titanate ceramics have been studied as potential lead-free ferroelectric materials over a broad temperature range (RT – 800 °C). Polycrystalline samples of Bi₄Ti_3−xZr_xO₁₂ (x=0.2, 0.4, 0.6) (BZrT) with high electrical resistivity were prepared using the solution combustion technique. The effect of Zr doping on the crystalline structure, ferroelectric properties and electrical conduction characteristics of BZrT ceramics were explored. Addition of zirconium to bismuth titanate enhances its dielectric constant and reduces the loss factor as it introduces orthorhombic distortion in bismuth titanate lattice which is exhibited by the growth along (0010) lattice plane. Activation energy due to relaxation is found to be greater than that due to conduction thus confirming that electrical conduction in these ceramics is not due to relaxation of dipoles. Remanent polarization of the doped samples increases as the Zirconium content increases.     

Resistance switching memory in perovskite oxides

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms.