Monte Carlo simulation of electric conductivity for pure and doping fullerene (C60)

In this paper, we have used Monte Carlo (MC) method to simulate and study the temperature and doping effects on the electric conductivity of fullerene (C60). The results show that the band gap has reduced by the doping and the charge carrier transport is facilitated from valence band to conduction band by the temperature where is touched a 300 K. In this case, the conductivity reached a value of $4\times {10}^{-7}\text{S}{\text{cm}}^{-1}$. The electric conductivity of C60 can increase by the triphenylmethane dye crystal violet (CV) alkali metal to reach $4\times {10}^{-3}\text{S}{\text{cm}}^{-1}$ at 303 K. Our results of MC simulation have a good agreement with those extracted from literature [10], [33].     

基于稳定分布噪声稀疏性及最优匹配的跳频信号参数估计

目前基于压缩感知的跳频信号参数估计方法大多是在高斯背景噪声下进行的研究,而在非高斯稳定分布脉冲噪声环境下,已有基于高斯噪声数学模型设计的算法性能下降。针对上述问题,该文分析了稳定分布噪声的大幅值脉冲满足近似稀疏性条件,利用跳频信号与噪声之间的时域特征差异将信噪分离,实现噪声抑制。并在压缩感知框架下,建立与跳频信号特点相匹配的3参数字典,采用最优匹配(Optimal Match, OM)方法对跳频信号自适应分解,获取匹配原子,基于这些时频原子包含的信息估计跳频信号的参数。仿真验证表明,在稳定分布噪声中,与常规的跳频信号估计方法相比,该文提出的先利用噪声稀疏性去噪,再采用最优匹配提取跳频信号参数的方法(Sparsity-OM, SOM),能够较好地抑制脉冲噪声,获得准确的参数信息,具有良好的鲁棒特性。     

一种新的部分频带噪声干扰模型下的FH/MFSK系统性能分析

部分频带噪声干扰(PBNJ)是一种主要的窄带干扰,它对通信系统性能的影响十分突出。该文针对FH/ MFSK系统中,传统的部分频带干扰模型的干扰带宽最小分辨率是一个跳频子带带宽(即MFSK信号的带宽),研究了更具有实际价值的新的部分频带干扰模型,即将干扰带宽最小分辨率精确到MFSK信号带宽的1/M。该文推导了莱斯衰落信道下的误比特率(BER)公式,给出了其闭合表达式,并通过计算机仿真验证了理论推导的正确性。理论分析与仿真结果表明,M,Nh,越小,传统与新PBNJ模型下FH/MFSK信号的BER性能差异就越大。     

A theoretical study on the charge transport properties of DNA

The charge transport properties of DNA are studied by the first-principle simulation to discuss the possibility of applying DNA to molecular wire. Both the hopping model and band-like model are introduced. By using hopping model, the theoretical hole mobilities calculated by Marcus theory between the same bases in DNA are 5.6 × 10⁻³, 4.1 × 10⁻², 2.0 × 10⁻² and 1.2 × 10⁻⁴ cm²V⁻¹s⁻¹ for T-T, A-A, C-C and G-G; and the calculated electron mobilities are 5.3 × 10⁻⁸, 1.5 × 10⁻⁴, 8.1 × 10⁻⁷ and 7.5 × 10⁻¹⁰ cm²V⁻¹s⁻¹ for T-T, A-A, C-C and G-G, respectively. And the charge transport for both holes and electrons between different bases exhibits directivity. By using band-like model, we calculated the band width of DNA with double helix structure and bilinear structure to investigate which structure will facilitate to the charge transport. We found that the band width of DNA increased when DNA transforming from the double helix structure to the bilinear structure, which means DNA with the bilinear structure possesses better charge transport properties. This research sheds a light on the molecular design for the molecule serving as the molecular wire.     

自适应跳频卫星通信系统的设计与实现

鉴于自适应跳频系统的良好抗干扰性能,提出了一种自适应跳频卫星通信系统的设计方案。在简要介绍自适应跳频技术基本原理的基础上,叙述了自适应跳频通信系统的结构和通信过程,重点讨论了自适应跳频卫星通信系统的设计模型、同步方式、频率集更新算法和抗干扰性能,最后,给出了自适应跳频卫星通信抗干扰终端设备的基本实现过程。     

最佳跳频序列族的设计与分析

本文提出了基于ｐ元广义ＧＭＷ序列和ｐ元Ｋａｓａｍｉ序列构造跳频序列族的方法,证明了基于广义ＧＭＷ序列所构造的跳频序列族具有最佳Ｈａｍｍｉｎｇ相关特性,而基于Ｋａｓａｍｉ序列所构造的跳频序列族不具有最佳Ｈａｍｍｉｎｇ相关特性。     

Interpretation of anomalous normal state optical conductivity of La-Sr-CuO cuprates

The observed frequency dependent optical response of hole doped cuprate La_1.85Sr_0.15CuO₄ superconductors, has been theoretically analysed. Starting from an effective two-dimensional (2D) interaction potential for superlattice of hole doped cuprates treated as a layered electron gas, the spectral function is formulated. Calculations of the optical conductivity σ(ω) have been made within the two-component scheme: one is the coherent Drude carriers responsible for superconductivity and the other is incoherent motion of carriers from one site to other leads to a pairing between Drude carriers. The approach accounts for the anomalies reported (frequency dependence of optical conductivity) in the optical measurements for the normal state. Estimating the effective mass from specific heat measurement and ε_∞ from band structure calculations for the low-energy charge density waves, the model has only one free parameter, the relaxation rate. The frequency dependent relaxation rates are expressed in terms of memory functions, and the coherent Drude carriers from the effective interaction potential lead to a sharp peak at zero frequency and a long tail at higher frequencies, i.e. in the infrared (IR) region. However, the hopping of carriers from one site to other (incoherent motion of doped carriers) yields a peak value in the optical conductivity centred at mid-IR (MIR) region. We find that both the Drude and hopping carriers in the superlattice of cuprates will contribute to the optical process of conduction in the CuO₂ planes and shows similar results on optical conductivity in the MIR as well as IR frequency regions as those revealed from experiments.     

Magnetoconductivity of Hubbard bands induced in silicon MOSFETs

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.     

基于单片机和AD9858的4频点快速跳频设计

在分析了DDS基本原理以及AD9858基本特点的基础上，介绍了AD9858的送数方式及单片机接口程序。给出了利用AD9858内部寄存器来实现跳频时间小于50ns的4频点快速跳频的具体方法。     

Hopping Transport and Stochastic Dynamics of Electrons in Plasma Layers

We investigate the stochastic dynamics and the hopping transfer of electrons embedded into two‐dimensional atomic layers. First we formulate the quantum statistics of general atom ‐ electron systems based on the tight‐binding approximation and express ‐ following linear response transport theory ‐ the quantum‐mechanical time correlation functions and the conductivity by means of equilibrium time correlation functions. Within the relaxation time approach an expression for the effective collision frequency is derived in Born approximation, which takes into account quantum effects and dynamic effects of the atom motion through the dynamic structure factor of the lattice and the quantum dynamics of the electrons. In the last part we derive Pauli equations for the stochastic electron dynamics including nonlinear excitations of the atomic subsystem. We carry out Monte Carlo simulations and show that mean square displacements of electrons and transport properties are in a moderate to high temperature regime strongly influenced by by soliton‐type excitations and demonstrate the existence of percolation effects (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)