The effect of increasing the excitation level of the sodium atom on the structure of the NaArn polyatomic exciplexes

In this work, the geometrical structures, the formation energies, and electronic states of the Na(ms)Ar_n polyatomic exciplexes with m = 3-6 and n = 2-5 are studied by using a quantum-classical method. The interaction potential between an electronically excited sodium atom and argon atoms are calculated by using a one-electron model involving electron-Ar and electron-Na⁺ pseudopotentials, in which the Hamiltonian is diagonalized at every optimization step in the Basin Hopping algorithm. The relationship between the position of the electronically excited levels and the cluster geometry is investigated as a function of the excitation level and of the spatial extension of the excited electron orbital. We show that the equilibrium structures of the ground state Na(3s)Ar_n and those of the electronically excited states Na(4s)Ar_n, Na(5s)Ar_n, and Na(6s)Ar_n are significantly different. As a result of the detailed examination of the relationships between the geometrical structure and density distribution of the Na valence electron of the Na^∗Ar_n with n = 2-5 polyatomic exciplexes, we can see that for the Na(4s)Ar_n polyatomic exciplexes, the two extreme geometries, neutral Na(3s)Ar_n and ionic Na⁺Ar_n compete. It appears that none of them is the actual one. For Na(5s)Ar_n and Na(6s)Ar_n the valence electron is very weakly bound to the ionic core and described by a more diffused orbital so that the geometry and the formation energies of this excited state called Rydberg states converge towards those of the ionic cores.     

最佳跳频序列族的设计与分析

本文提出了基于ｐ元广义ＧＭＷ序列和ｐ元Ｋａｓａｍｉ序列构造跳频序列族的方法,证明了基于广义ＧＭＷ序列所构造的跳频序列族具有最佳Ｈａｍｍｉｎｇ相关特性,而基于Ｋａｓａｍｉ序列所构造的跳频序列族不具有最佳Ｈａｍｍｉｎｇ相关特性。     

Magnetoconductivity of Hubbard bands induced in silicon MOSFETs

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.     

基于贝叶斯稀疏学习的多跳频信号频率跟踪方法

以往的跳频信号参数盲估计方法大多难以适应多个信号同时存在的情况,且需要积累一定数量的样本以后才能从中提取所需要的信息.为了稳定实时地跟踪跳频信号的频率,该文提出一种利用贝叶斯稀疏学习的单/多通道跳频信号频率估计和跳变时刻检测方法来实现多跳频信号频率的实时跟踪.首先建立了多跳频信号的稀疏表示模型,然后介绍了多观测贝叶斯稀疏学习算法及跳变时刻实时检测方法,最后仿真结果验证方法的有效性.     

基于单片机和AD9858的4频点快速跳频设计

在分析了DDS基本原理以及AD9858基本特点的基础上，介绍了AD9858的送数方式及单片机接口程序。给出了利用AD9858内部寄存器来实现跳频时间小于50ns的4频点快速跳频的具体方法。     

Electrical characteristics of low temperature-Al0.3Ga0.7As

In this work, we present electrical characterizations of n⁺ GaAs/low temperature (LT)-Al_0.3Ga_0.7As/n⁺ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. The resistivity and V_tfl parameters of these LT-Al_0.3Ga_0.7As layers are compared with those of LT-GaAs and Al_0.3Ga_0.7As grown at a normal growth temperature of 720°C. Low-temperature Al_0.3Ga_0.7As layers exhibit resistivities as high as 10¹² ohm-cm, nearly four orders of magnitude higher than that of LT-GaAs, and V_tfl values as high as 45 V, over twice that of LT-GaAs. We also find that the LT-Al_0.3Ga_0.7As materials grown at 250 and 300°C appear to show opposite and contradictory trends with respect to resistivity and V_tfl. We propose that this result can be explained by residual hopping conduction in the 250°C material. Temperature dependent conductivity measurements confirm the presence of a hopping mechanism in LT-Al_0.3Ga_0.7As grown at 250°C and yield activation energies of 0.77 and 0.95 eV for LT-GaAs and LT-Al_0.3Ga_0.7As, respectively.     

Interpretation of anomalous normal state optical conductivity of La-Sr-CuO cuprates

The observed frequency dependent optical response of hole doped cuprate La_1.85Sr_0.15CuO₄ superconductors, has been theoretically analysed. Starting from an effective two-dimensional (2D) interaction potential for superlattice of hole doped cuprates treated as a layered electron gas, the spectral function is formulated. Calculations of the optical conductivity σ(ω) have been made within the two-component scheme: one is the coherent Drude carriers responsible for superconductivity and the other is incoherent motion of carriers from one site to other leads to a pairing between Drude carriers. The approach accounts for the anomalies reported (frequency dependence of optical conductivity) in the optical measurements for the normal state. Estimating the effective mass from specific heat measurement and ε_∞ from band structure calculations for the low-energy charge density waves, the model has only one free parameter, the relaxation rate. The frequency dependent relaxation rates are expressed in terms of memory functions, and the coherent Drude carriers from the effective interaction potential lead to a sharp peak at zero frequency and a long tail at higher frequencies, i.e. in the infrared (IR) region. However, the hopping of carriers from one site to other (incoherent motion of doped carriers) yields a peak value in the optical conductivity centred at mid-IR (MIR) region. We find that both the Drude and hopping carriers in the superlattice of cuprates will contribute to the optical process of conduction in the CuO₂ planes and shows similar results on optical conductivity in the MIR as well as IR frequency regions as those revealed from experiments.     

A theoretical study on the charge transport properties of DNA

The charge transport properties of DNA are studied by the first-principle simulation to discuss the possibility of applying DNA to molecular wire. Both the hopping model and band-like model are introduced. By using hopping model, the theoretical hole mobilities calculated by Marcus theory between the same bases in DNA are 5.6 × 10⁻³, 4.1 × 10⁻², 2.0 × 10⁻² and 1.2 × 10⁻⁴ cm²V⁻¹s⁻¹ for T-T, A-A, C-C and G-G; and the calculated electron mobilities are 5.3 × 10⁻⁸, 1.5 × 10⁻⁴, 8.1 × 10⁻⁷ and 7.5 × 10⁻¹⁰ cm²V⁻¹s⁻¹ for T-T, A-A, C-C and G-G, respectively. And the charge transport for both holes and electrons between different bases exhibits directivity. By using band-like model, we calculated the band width of DNA with double helix structure and bilinear structure to investigate which structure will facilitate to the charge transport. We found that the band width of DNA increased when DNA transforming from the double helix structure to the bilinear structure, which means DNA with the bilinear structure possesses better charge transport properties. This research sheds a light on the molecular design for the molecule serving as the molecular wire.     

Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots

We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields.