宽带放大器可靠性问题浅析

叙述了国产高频宽带放大器的质量和可靠性现状，详细介绍了这类产品的质量一致性检验、可靠性摸底试验和现场使用过程中出现的可靠性问题，用统计的方法得出了可靠性特征量，通过对失效样品的失效分析，总结出宽带放大器主要的失效模式和失效机理，并提出了消除和减少失效、提高宽带放大器可靠性的措施和建议。     

分置式斯特林制冷机失效分析

斯特林制冷机是红外探测器组件中一个关键的组成部分。目前我国斯特林制冷机的性能指标与国外同类产品差距缩短 ,但可靠性问题一直没有很好解决。文中介绍了斯特林制冷机的原理、双活塞对动型分置式斯特林制冷机的结构特点及表征参数 ;通过对产品研制开发过程中成品率低的原因分析 ,揭示了主要失效机理 ,对改进工艺和设计起到了参考和指导作用。     

A two step algorithm for solving a large scale semi-definite logit model

This paper proposes a two step algorithm for solving a large scale semi-definite logit model, which is appreciated as a powerful model in failure discriminant analysis. This problem has been successfully solved by a cutting plane (outer approximation) algorithm. However, it requires much more computation time than the corresponding linear logit model. A two step algorithm to be proposed in this paper is intended to reduce the amount of computation time by eliminating a certain portion of the data based on the information obtained by solving an associated linear logit model. It will be shown that this algorithm can generate a solution with almost the same quality as the solution obtained by solving the original large scale semi-definite model within a fraction of computation time.     

Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage

Scanning Spreading Resistance Microscopy (SSRM) is successfully applied to investigate failing nLDMOS test devices that exhibit a lowered break down voltage (BVDSS) in electrical test. Cross-sectional, two-dimensional maps of the local sample resistivity from fail and reference (pass) devices reveal significant differences of the dopant concentration in individual, specific regions. This important information enables unambiguous identification of the root cause of the device failure to be dopant related. Furthermore, from a set of hypothesis, which explains the failed electrical test, SSRM results confirm exactly one and rule out the other. These are two important steps towards root cause identification. Since a relative comparison of fail and pass SSRM scans is sufficient for this failure analysis, an extensive data calibration for the absolute dopant concentration by means of additional SSRM measurements on test samples with known dopant concentration is not required. The ability of SSRM to prove or disprove miscellaneous fail hypothesis even without data calibration makes this method a very powerful tool for analysis of dopant related failure types.     

Localization of temperature sensitive areas on analog circuits

We introduce a novel easy to apply method to detect critical temperature sensitive areas on analog circuits. Our method is based on heat diffusion on a silicon micro-chip: the corners of a temperature sensitive micro-chip are heated up directly by ESD diodes or infrared laser light. This heat stimulus at the corners results in an inhomogeneous temperature distribution. Thus, the temperature is a function in time and space. The elapsed time to change the chip status from “fail” to “pass” as a reaction to the heat stimulus correlates with the distance to the heat source. This correlation is extracted from COMSOL simulations and experimental results. A numerical program based on that correlation succeeded in localization of the temperature sensitive chip module.Micro-chips affected by corner MOSFETs in the subthreshold regime are used to demonstrate our method.     

Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect

The semiconductor technologies evolution allows greatly reducing noise impact on products and many structures have been created to reduce its effect. However, this paper presents the apparition of a noise issue during the production of a mixed-mode device dedicated to automotive applications. The research investigations concerned the fact that failure was not detected at test level but at customer level; therefore, it was determinant to understand the root cause of this failure mode to drive corrective actions in order to secure customer. The challenge was to analyse noise in Failure Analysis (FA) without fault spatial localization results. Indeed, Light Emission Microscopy (EMMI) and Thermal Laser Stimulation (ex: Soft Defect Localization – SDL) were unable to provide any defective area in the product. The lack of failing device identification led us to combine electrical and design analyses in order to define hypothesis on the failure origin. It was then possible to drive physical investigations through different approaches, using physical cross-section, Secondary Ion Mass Spectrometry (SIMS) and Scanning Capacitance Microscopy (SCM) techniques. Finally, the obtained complementary results will be discussed and an explanation of the failure mechanism will be presented as the root cause issue, allowing defining the defective step in production process.     

Power grid redundant path contribution in system on chip (SoC) robustness against electromigration

The miniaturisation of integrated circuits leads to reliability issues such as electromigration (EMG). This well-known phenomenon is checked at design level by CAD tools. The conventional EMG check methods are based on electrical parameters. However, the wire physical degradation depends also on the interconnection network structure. In order to improve the EMG check methodologies, we propose an accurate method based on failure mechanism and chip power grid configuration. Indeed, the power grid offers redundant paths in case of void in main power supply path. The principle of our method is to take into account the contribution of these redundant paths in power grid lifetime assessment. These effects are validated by silicon ageing tests on structures designed in 28 nm Full Depleted Silicon on Insulator (FDSOI). These accelerated tests results have confirmed the lifetime gain due to the redundancy. These results provide perspectives for the relaxation of wire current limits and improve the chip design toward EMG.     

Failure analysis on reflector blackening between lead frame electrodes in LEDs under WHTOL test

Blackening induced lumen decay in a QFN LED after WHTOL reliability test was reported and analyzed in this paper. A new LED blackening failure mechanism was proposed based on solid experimental results. We concluded that the failure process underwent delamination between lead frame and reflector polymer composites followed by chemical penetration, composite corrosion, silver migration, and finally caused blackening failure. Delamination and corrosive de-flash agent were the key factors for the failure mode. Besides, we also estimated the influence of the failure to the optical performance through simulation. Apart from other reported factors, this study highlighted that both composite corrosion and Ag migration could generate serious illumination decrease as well. The outcome of this study is valuable for LED manufacture and quality control in the future.     

锌电极放电过程及失效机制数值分析

锌-空气电池是一种高能量的电池体系.实验表明, 在大功率工作条件下, 锌电极的材料利用率随电流密度的增加而急剧下降. 为探索其在大功率工作条件下的放电机理, 本文针对这一过程建立了一维数学模型, 通过数值求解模拟多个物理量如离子浓度、传递电流密度、电极孔隙度、固体氧化锌等在电极内部的分布变化情况, 在此基础上分析电极的性能. 数值结果分析表明, 固体氧化锌对电极内质量传输过程的限制是导致电极失效的根本原因. 其析出时间及在电极内部的集中分布位置对电极性能有显著影响; 而仅当其体积分数超过30%-35%的范围后才开始显著限制传质过程. 讨论了电极的优化措施, 模拟表明更高的溶液电导率,更大的电极孔隙度有利于增加大功率工作条件下电极的材料利用率. 但最重要的是保持电极内部氢氧根离子的浓度在一个较高的值,对于封闭式电极可以通过补液实现, 理想情况为设计一个电解液循环式的锌电极.     

A refined numerical model for determining inflation-burst behavior of composite membrane structures

The airship structures made of multi-layer composite fabrics or membranes can offer the platform for earth observations, wireless communications and space research due to light weight and good mechanical performance. The structural safety and serviceability strongly depend on material properties and working conditions. Available studies are limited within service stress limits or are lack of suitable biaxial tensile constitutive models for understanding structural behavior. This paper thus focuses on a refined numerical model for determining inflation-burst behavior of composite airship structures considering new biaxial constitutive equations, novel failure criteria and manufacture factors.The differences between ideal and real forms of airship structures, e.g. volume difference, demonstrate the necessity for incorporating cutting-pattern effects in the initial numerical model. For structural analysis, stress distributions on real structural forms are different from those on ideal forms because of welding parts that can enhance local stiffness. The ultimate pressures are 56.7 kPa and 59.5 kPa for ideal and real structural forms. Structural breaking initiated at the maximum diameter of ideal structural forms propagates fast while welding parts can prevent breaking propagation for real structural forms. Therefore, the refined numerical model can reveal basic structural behavior and safety performance of airship structures in the inflation-burst processes.