Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

STI process steps for sub-quarter micron CMOS

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.     

GaAs器件工艺中等离子刻蚀及计算机辅助监控技术研究

用Ｎ２气和ＮＦ３反应气体，在较低的刻蚀功率下实现了用薄正性光刻胶ＡＺ１５１８作掩模，均匀、快速刻蚀ＳｉＯ２，ＳｉＯＮ，Ｓｉ３Ｎ４，ＷＮ，Ｗ等材料的等离子刻蚀技术。利用到蚀过程中射频参数的变化和计算机技术，将射频参数的变化在计算机屏幕上实时显示，实现了计算机辅助监控和终点检测技术。     

GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究

为研制全集成光开关、微片式激光器等，对ＧａＡｓ、ＧａＰ、ＩｎＧａＡｓＰ、ＩｎＡＩＧａＡｓ、ＡｌＧａＡｓ等材料的化学腐蚀进行了实验研究。为了研制ＩｎＡｌＧａＡｓ／ＩｎＡｌＡｓ／ＩｎＡｌＧａＡｓ微片式激光器，开发了Ｈ３ＰＯ４／Ｈ２Ｏ２／Ｈ２Ｏ薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ选择性腐蚀液；为了研制ＩｎＧａＡｓＰ／ＩｎＰ／ＩｎＧａＡｓＰＴｂａｒ型光波导，开发了ＨＣｌ／Ｈ３ＰＯ４／Ｈ２Ｏ２薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ２选择性腐蚀液；为了研制ＧａＰ、ＩｎＧａＰ光波导，开发了ＨＣｌ／ＨＮＯ３／Ｈ２Ｏ薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外，蚀刻成的ＧａＰ光波导侧壁平滑无波纹起伏。此种结果尚未见报导。     

Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces.     

钠硼硅酸盐玻璃分相及浸析的NMR研究

用多种ＮＭＲ方法，包括＾２９Ｓｉ、＾２３Ｎａ，＾１１Ｂ ＭａＳ及＾２９Ｓｉ ＣＰ／ＭＡＳ ＮＭＲ，研究了一定组成的ａ２Ｏ－Ｂ２Ｏ３－ＳｉＯ２三元体系玻璃在不同温度下分相处理２４小时及用酸浸析处理后的结构变化。结果表明，在低于分相上界临界温度的范围内，存在着一个温度转折点，低于这一温度时，受动力学因素影响，分相未达平衡态，温度愈低，距平衡态愈过，分相愈下完全。超过这一温度，分相可达平衡态，受热力学控     

JD树脂刻蚀及涂层的XPS研究

ＪＤ光学树脂表面刻蚀过程的ＸＰＳ研究表明，引进树脂遥ＣＯＨ，Ｃ＝Ｏ，Ｃ－ＳＯ３Ｈ，ＣＯＯＨ等基因随刻蚀温度的提高或时间的延长而增加，对其相对含量进行了计算，固化后的耐磨涂层具有ＳｉＯ２结构，ＪＤ板材的最佳刻蚀条件为２０℃，２０ｍｉｎ。     

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

The effect of low-energy ion bombardment on CD₄/O₂ and CF₃X (X=F, Cl, Br) plasma etching has been assessed by applying controlled rf bias voltages on polystyrene (PS) and polymethylmethacrylate (PMMA) samples. In both cases ion bombardment has been found to have a chemical effect. In the case of CF₄/O₂ discharges, ion bombardment has been found to change the relative etching efficiency of different mixtures. In the case of CF₃X plasmas, ion bombardment has been found to alter PMMA and PS etch rates in a different way. In particular, the ratios between CF₄ and CF₃X (X=Cl, Br) etch rates of PS have been found to decrease with increasing bias voltage. This effect has been tentatively attributed to an ion bombardment-induced enhancement of the reaction between the aromatic ring and halogen molecules formed in CF₃Cl and CF₃Br discharges.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

Ag@Au core/shell triangular nanoplates with dual enzyme-like properties for the colorimetric sensing of glucose

Due to the serious harm of diabetes to human health, development of sensitive assays for glucose level is of high significance for early prevention and treatment of diabetes. Currently, most conventional enzyme-based glucose sensors suffer from high cost and low stability due to the inherent defects of natural enzymes. Herein, we develop a pure nanozyme-based glucose detection method using Ag@Au core/shell triangular nanoplates (TNPs), which combines glucose oxidase (GOD)- and horseradish peroxidase (HRP)-like activities of the Au shell and inherent plasmonic properties of Ag TNPs. The sensing mechanism is based on the fact that the Au shell possessed GOD-like activity, enabling the oxidation of glucose to produce H₂O₂, which can further etch the silver core, leading to the decrease of absorbance at 800 nm and the color change from blue to colorless. Compared with the previous nanozymes-based glucose sensors, our method avoids the use of enzymes and organic chromogenic agent. Moreover, the stability of the Ag@Au core/shell TNPs is much better than that of Ag TNPs due to the protection by the coating of the Au shell. This method was successfully applied to the detection of urine samples from patients with diabetes, indicating its practical applicability for real sample analysis.