Roughness reduction in submicron waveguides by low-molecular weight development

Roughness reduction of a submicron waveguide profile in chemically amplified negative resist is here performed by proper selection of an alkali-based developer, taking into account that its smaller molecules lead to smoother resist surface by altering the developing mechanism of aggregate extraction performed with standard quaternary ammonium hydroxide. Roughness is then analyzed by means of classical Atomic Force Microscope inspection; furthermore, a non-invasive line edge roughness analysis approach based on top-down scanning electron microscope acquisition gives comparable results, in terms of standard deviation and molecular aggregate periodicity.     

涂胶设备背面冲洗功能的开发与研制

本文根据涂胶设备在加工制品过程中所遇到的制品背面沾污问题，提出改进措施，并根据设备的具体情况，增加了涂胶设备的背面冲洗功能。使制品在涂胶过程中，及时地对制品背面进行冲洗，从而保证了制品背面的洁净度，对提高产品质量和提高产品的成品率有非常重要的意义，同时对开发一些技术要求较高的新品也有深远的影响。     

用时间-边界跟踪模型确定抗蚀剂显影后的轮廓分布

文章提出了时间一边界跟踪模型的定义,阐述了用该模型确定抗蚀剂显影后的轮廓分布的方法,并给出了模拟计算结果.     

Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

分级分段印制插头工艺的研发与应用

介绍了一种采用特殊的设计方法制作分级分段印制插头的工艺生产的印制插头完全没有引线残留的踪迹,对分级分段印制插头的品质做到了有效的控制,可靠性实达到品质要求,通过了实际生产应用的验证,建立了工艺规范和品质管制计划,为批量生产奠定了坚实基础。     

HMDS预处理系统

讲述了HMDS预处理工艺过程,HMDS预处理系统的优越性及该系统的工作原理与结构。     

碲锌镉晶体常用腐蚀剂的坑形特性研究

大面积、高质量碲锌镉单晶是制备碲镉汞红外焦平面器件的理想衬底材料,而腐蚀法是常用的揭示碲锌镉晶体缺陷和评价晶体质量的方法之一。对碲锌镉晶体常用的Nakagawa、Everson、EAg1和EAg2四种腐蚀剂在碲锌镉材料（111）晶面上的腐蚀坑坑形进行了研究,结果发现,EAg2腐蚀剂在（111）B面上的腐蚀坑为平底坑,Everson腐蚀剂在 (111)B面上产生的腐蚀坑包括平底坑和带有不同倾斜方向坑底的三角锥形坑,进一步的研究还表明,三角锥形坑并未沿着坑底的倾斜方向向下延伸。实验中也首次观察到了EAg腐蚀剂的黑白平底坑。对常用腐蚀剂的坑形特性研究,将有助于更好地利用腐蚀剂开展碲锌镉材料缺陷研究和晶体质量评价工作。     

聚焦离子束工作原理及刻蚀性能研究

综述了聚焦离子束系统的结构和基本原理,介绍了国产化聚焦离子束系统的结构与特点。基于国产化聚焦离子束系统进行了硅材料刻蚀实验,研究了硅材料刻蚀速率与离子束流大小的关系,建立了刻蚀速率与束流大小的关系方程,进行了硅悬梁微结构刻蚀加工。结果表明,国产聚焦离子束系统可满足硅微悬梁结构加工的应用需要。     

铝-RIE刻蚀工艺

干法刻铝中 ,BCl3添加 Cl2 、CHCl3和 N2 ,可改变 Al的刻蚀速率、Al对 Si O2 和胶的选择性、线宽和胶膜质量 ,其中 Cl2 流量影响最大。此外 ,本文还给出 RF功率和气压的影响。采用适当的气体组合、不太高的功率和不太低的气压 (BCl3∶ Cl2 ∶ CHCl3∶ N2 =70 sccm∶ 1 5 sccm∶ 1 0 sccm∶ 0～ 5 0 sccm,2 0 0 m Torr,2 0 0 W)可以实现细线条 (0 .6μm) Al的刻蚀。     

Study on silicon surface oxidation of post-implant resist cleaning

Minimum substrate loss is required for resist strip of high dose, ultra shallow junction implant for source/drain extensions. Silicon surface oxidation of downstream plasma resist strip results in silicon recess of the source/drain extension regions. This paper reports the study of silicon surface oxidation for different resist strip plasma chemistries and the effect of plasma strip process parameters such as power, pressure and temperature on silicon surface oxidation. A good agreement was found between optical ellipsometry, XPS (X-ray photoelectron spectroscopy) and TEM (transmission electron spectroscopy) for thickness measurement of very thin (<20 Å) oxide grown on silicon surface due to plasma exposure. Selectivity of crust breakthrough and resist removal over silicon oxidation was also discussed in this paper along with dopant loss.