A novel low power hybrid cache using GC-EDRAM cells

In a typical embedded CPU, large on-chip storage is critical to meet high performance requirements. However, the fast increasing size of the on-chip storage based on traditional SRAM cells makes the area cost and energy consumption unsustainable for future embedded applications. Replacing SRAM with DRAM on the CPU’s chip is generally considered not worthwhile because DRAM is not compatible with the common CMOS logic and requires additional processing steps beyond what is required for CMOS. However a special DRAM technology, Gain-Cell embedded-DRAM (GC-eDRAM)  [1], [2], [3] is logic compatible and retains some of the good properties of DRAM (small and low power). In this paper we evaluate the performance of a novel hybrid cache memory where the data array, generally populated with SRAM cells, is replaced with GC-eDRAM cells while the tag array continues to use SRAM cells. Our evaluation of this cache demonstrates that, compared to the conventional SRAM-based designs, our novel architecture exhibits comparable performance with less energy consumption and smaller silicon area, enabling the sustainable on-chip storage scaling for future embedded CPUs.     

Autonomous system for data collection: Location and mapping issues in post-disaster environment

Disaster relief requires many resources. Depending on the circumstances of each event, it is important to rapidly choose the suitable means to respond to the emergency intervention. A brief review of the conditions and means demonstrated the usefulness of an autonomous stand-alone machine for these missions. If many techniques and technologies exist, their relevant combination to achieve such a system presents several challenges. This communication tries to outline the possible achievement of an autonomous vehicle under these particular circumstances. This paper focuses on the specific working conditions and welcomes future contributions from robotics and artificial intelligence.In the necessarily limited scope of this article, the authors focus on a particularly critical aspect: location. Indeed, this machine is intended to evolve in heterogeneous and dangerous environment and without any outside contacts that could last up to several days. This blackout, due to the propagation difficulties of electromagnetic waves in the ground, induces an independence of the localisation process and makes the use of any radio navigation support system (GNSS), most of the time, impossible. The knowledge of the position of the system, both for navigation of the autonomous system (Rover) and location of targets (victims buried under debris) must be able to be estimated without contributions from external systems. Inertial classical techniques, odometer, etc., have to be adapted to these conditions during a long period without external support. These techniques also have to take into account that energy optimisation requests the use of low-power processors. Consequently, only poor computing capacity is available on-board.The article starts with a presentation of the context of a post-disaster situation as well as the main missions of Search and Rescue (SaR). It is followed by the analysis of autonomous navigation located in a post-earthquake situation. We will then discuss means to determine the attitude of the autonomous system and its position. The interest of hybridisation with external systems – whenever possible –, will be evaluated with a view to correcting deviations suffered by the system during its mission. Finally, prospects and future work are presented.     

DSP--数字化时代的基因芯片

DSP是当今发展最为迅速的和最有发展前景的技术之一。与普通CPU和MCU相比 ,DSP在数字信号处理方面有着无可比拟的优势 ,特别适合网络、通信、控制等需要进行大量数字信号处理的应用场合。今天DSP已经成为通信、计算机、网络、工业控制以及家用电器等电子产品中不可或缺的基础器件 ,DSP在通信、计算机、网络、工业控制以及消费类电子产品等领域有着非常广泛的应用 ,本文阐述了DSP的特点、应用和市场以及DSP技术的发展前景。     

二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响     

Characterization of ZnO:AI films deposited by r.f.magnetron-sputtering at low temperature

Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Investigation of thin-film electroluminescent structures on rough subsrates

Results of experimental investigations of the volt-brightness characteristics, frequency dependences of brightness, and the directional radiation pattern of electroluminescent MSDM, MSCM, and MSDCM emitters, where M stands for the first transparent and second nontransparent electrodes, S is a semiconductor, D is a thin-film dielectric, and C is a silicone-based composite liquid dielectric with a powdered segnetoelectric filler, developed on conventional “smooth” and rough glass substrates are presented. It is shown that electroluminescent structures on rough surfaces have a brightness approximately two times higher than that of similar structures developed on a “smooth” substrate. Ul’yanovsk State University, 42, L. Tolstoi St., Ul’yanovsk, 432700, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 507–512, July–August, 1997.     

彩色PDP用玻璃基板

本文讨论了彩色ＰＤＰ现用钠钙玻璃的热稳定性，指出由于这种玻璃在热处理过程中易变形和收缩，因而不适合作大面积彩色ＰＤＰ基板材料，介绍了彩色ＰＤＰ基板玻璃的制造方法和特点。最后介绍了日本旭硝子公司和美国康宁公司各自为彩色ＰＤＰ新开发的玻璃基板材料ＰＤ２００和ＣＳ２５。     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底