Determinants of the intention to use non-medical insertable digital devices: The case of Chile and Colombia

In the past, thinking of carrying electronic devices inside our bodies was only posed by non-real scenarios. The emergence of insertable devices has changed this. Since this technology is still in its initial development stages, few studies have investigated factors that influence its acceptance. This paper analyzes the predictors of the intention to use non-medical insertable devices in two Latin American contexts. We used partial least squares structural equation modeling to examine whether six constructs predicted intention to use insertable devices. A questionnaire was administered to undergraduate students located in Colombia and Chile (n = 672). We also examined whether these predictors influenced intention differently for both of them. Four common constructs significantly and positively influenced both Chilean and Colombian respondents to use insertable devices (hedonic motivation, habit, performance expectancy, and social influence). Also, the habit has a complementary mediating effect on the relationship between social influence and behavioral intention. By contrast, effort expectations were a positive and significant predictor, but only among Chilean respondents. Findings suggest that when technologies are emerging, well-known predictors of intention (e.g., performance and effort expectations) are less influential than predictors related to self-efficacy (e.g., habit and hedonic motivation). The use of insertable devices has a significant impact on society. Thus, a better understanding of what motivates their use has implications for both academia and industry.     

Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study

Energy bands, effective mass of carriers, absolute band edge positions and optical properties of tetragonal AgInS₂ were calculated using a first-principles approach with the exchange correlation described by B3LYP hybrid functional. The results indicate that tetragonal AgInS₂ has a direct band gap of 1.93 eV, which reproduce well experimental value. Calculated effective masses of electrons and holes are both small which are beneficial to separation and migration of electron and hole pairs. This implies that AgInS₂ has good photocatalytic performance. The calculated optical characteristics indicate that AgInS₂ has a slight anisotropy for both the real and imaginary parts of the dielectric function and exhibits large optical absorption in the visible light region. Furthermore, the calculated band edge positions in (100), (010) and (001) surfaces indicate that tetragonal AgInS₂ is beneficial to the reduction and oxidation of water to hydrogen and oxygen under visible light irradiation.     

2020年电子电路技术热点

文章归纳了2020年电子电路产业一些技术热点,主要有5G电路板设计和基材,制造方面半加成法、3D打印、直接金属化孔电镀和垂直互连结构等技术,以及集成电路封装载板技术。     

Design of broadband achromatic metasurface device based on phase-change material Ge2Sb2Te5

Based on the phase-change material Ge₂Sb₂Te₅ (GST), achromatic metasurface optical device in the longer-infrared wavelength is designed. With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST, the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5 μm to 13 μm are realized. The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband. The simulation calculation results show that the full-width at half-maximum (FWHM) of the focusing spot reaches the diffraction limit at each wavelength. In addition, the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°. The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces, but also provides new possibilities for the integration of optical imaging, optical coding and other related optical systems.     

面向消费类电子产品的自动化生产线成组技术

针对现代消费类电子产品快速更新换代的现状, 介绍了该类产品的自动化生产线成组技术,阐述了通过度量消费类电子产品相似性和派生性特征,对产线进行成组编码的原理,研究产线工位单元的建模方法,描述了建模内容,并通过有无装载板的产线结构,论述了产线成组编码集成的途径和方法.     

CN decoration of dibenzofuran modified biphenyl for high triplet energy host for blue phosphorescent organic light-emitting diodes

A strongly electron deficient and high triplet energy host for blue emitters was developed by decorating a dibenzofuran modified biphenyl backbone structure with multiple CN units. Two hosts, 6,6′-bis(6-cyanodibenzo[b,d]furan-4-yl)-[1,1′-biphenyl]-3,3′-dicarbonitrile(CNDBF1) and 2,2′-bis(6-cyanodibenzo[b,d]furan-4-yl)-[1,1′-biphenyl]-4,4′-dicarbonitrile(CNDBF2), were derived from the CN decoration strategy for application in blue organic light-emitting diodes requiring high triplet energy host. They showed high triplet energy above 2.79 eV and acted as the electron transport type host based on the strong electron deficiency. The mixture of the CNDBF1 and CNDBF2 hosts with a hole transport type 3,3′-di(9H-carbazol-9-yl)-1,1′-biphenyl host performed as the exciplex host of a blue phosphor and accomplished high external quantum efficiency of 22.7% in the blue phosphorescent organic light-emitting diodes.     

Adsp-21060的主机接口在实时图像处理中的应用

简要介绍了数字信号处理器Adsp 2 10 6 0和大规模可编程逻辑器件EP1K5 0。详细讨论了Adsp 2 10 6 0的主机接口工作模式以及一个实时图像跟踪处理器的硬件组成原理 ,在这个系统中EP1K5 0充当了主机。调试结果表明 ,所提出的硬件结构设计思想工作效率高 ,完全能够胜任实时图像处理的实际需要。     

质量控制图系统的实现及在SMT中的应用

本文将控制图理论与计算机技术相结合,开发了质量控制图系统.介绍了该系统的设计方案和关键技术问题,并以电子产品制造中监控SMT机的焊膏厚度为例说明了系统的应用.     

一种基于ECDSA的USB存储设备访问控制方案

文章针对使用USB存储设备造成的内部泄密问题,提出了一种USB存储设备访问控制方案,该方案对用户的身份认证基于安全强度很高的椭圆曲线数字签名算法,同时使用过滤器驱动程序实现了USB存储设备的读写控制,因而此方案具有较好的安全性、实用性和通用性。     

High Power Fiber Bundle Array Coupled LDA Module

1 Introduction High power laser diode arrays (LDA) have many advan- tages such as small volume, long working life, high slope efficiency and high optical density, so they have many applications in medical treatment, material pro- cessing, and for the pumping source of solid laser and etc. But unfortunately, the LDA can not be easy to use directly in these fields because of their poor beam quality and extremely asymmetric divergent beams (!x≈ 5°～10°and !y≈20°～35°, for example), so it …