Organic Nanoparticles: Preparation,Self‐Assembly,and Properties

The strong tendency of organic nanoparticles to rapidly self‐assemble into highly aligned superlattices at room temperature when solution‐cast from dispersions or spray‐coated directly onto various substrates is described. The nanoparticle dispersions are stable for years. The novel precipitation process used is believed to result in molecular distances and alignments in the nanoparticles that are not normally possible. Functional organic light‐emitting diodes (OLEDs)—which have the same host–dopant emissive‐material composition—with process‐tunable electroluminescence have been built with these nanoparticles, indicating the presence of novel nanostructures. For example, only changing the conditions of the precipitation process changes the OLED emission from green light to yellow.     

Colloidal ZnO nanostructures and functional coatings: A survey

The past research work devoted to ZnO nanocolloidal sol-gel route is reviewed. It highlights the cluster chemistry of alcoholic ZnAc₂ solutions and the results of ZnO colloid growth investigations performed worldwide. Moreover, the role of doping and co-doping in the processing of functional ZnO coatings is discussed. The possibilities of tuning the optical properties are also reported with a particular attention to luminescence. The last part of this paper deals with electrical and photoelectrochemical properties of ZnO nanocrystals and their aggregates. This contribution is dedicated to the 80th birthday of Prof. Arnim Henglein from the Hahn-Meitner-Institut in Berlin and to the memory of Prof. Jacques Mugnier from the Université Claude-Bernard Lyon 1 in France.     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)₃phen (DBM = dibenzoylmethane), Yb(DNM)₃phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C₅H₅)Co{P(O)Et₂}₃]^–) have been studied. EL devices composed of Yb(DNM)₃phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)₃phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)₃phen and Yb(DNM)₃phen are, respectively, 7 × 10^–5 (at 6 V and at 0.81 mA mm^–2) and 4 × 10^–4 (at 7 V, and 0.74 mA mm^–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)₃phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.     

High‐Tg Carbazole Derivatives as Blue‐Emitting Hole‐Transporting Materials for Electroluminescent Devices

A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (T_g > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq₃/Mg:Ag (Alq₃ = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq₃ layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here.     

Electroluminescence from phenylenevinylene-based polymer blends

The electroluminescent behaviour of films of poly(phenylphenylenevinylene) (PPPV), of PPPV blended with polystyrene (PS) and of PS doped with oligo(phenylenevinylene) sandwiched between indium–tin oxide (ITO) and Al contacts has been investigated. Polymer blending increases the relative quantum efficiency by up to two orders of magnitude. Studying the cell performance under application of rectangular voltage pulses as a function of temperature indicates that (i) hole injection at the ITO contact occurs by tunnelling, (ii) tunnel injection of electrons at the cathode is promoted by a space charge field across an interfacial Al₂O₃ layers and (iii) leakage of holes through the cathodic barrier is the main loss mechanism for holes.     

Luminescence and electroluminescence of bis (2-(benzimidazol-2-yl) quinolinato) zinc. Exciplex formation and energy transfer in mixed film of bis (2-(benzimidazol-2-yl) quinolinato) zinc and N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine

The absorption and emission properties of benzimidazol-2-yl-quinoline (BIQ) and bis (2-(benzimidazol-2-yl) quinolinato) zinc (ZnBIQ) a new emitter used for organic light emitting device (OLED) were reported. Exciplexes are observed for ZnBIQ with N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) system, in both electro- and photoluminescent processes. The identification of exciplex emission in co-evaporated and multi-layer ZnBIQ thin film was reported for the first time. The optical formation of the exciplex involves the excitation of a single molecule, followed by the relaxation of that exciton into a lower energy exciplex state. Both BIQ and ZnBIQ possess very high thermal stabilities and can be purified by subliming under the high vacuum condition. Devices consisting of ZnBIQ as the emitting layer have been fabricated, and the emission spectra of ZnBIQ-base devices gave a voltage-dependent spectrum, with the red emission observed (3-7 V), switching over to strong white emission as the bias was raised.     

Synthesis, characterization and luminescence study of dimethyl(β-ketoiminato)gallium (-indium) complexes: crystal structure of dimethyl[1-phenyl-3-N-(4-methoxyphenylimino)-1-butanonato]gallium

Six dimethylgallium (indium) complexes of type Me₂ML [M = Ga, L = 1-phenyl-3-N-(phenylimino)-1-butanonato (1), 1-phenyl-3-N-(p-methoxyphenylimino)-1-butanonato (2), 1-phenyl-3-N-(o-chloro phenylimino)-1-butanonato (3); M = In, L = 1-phenyl-3-N-(phenyl imino)-1-butanonato (4), 1-phenyl-3-N-(p-methoxyphenylimino)-1-butanonato (5), 1-phenyl-3-N-(o-chlorophenylimino)-1-butanonato (6)] have been synthesized by reaction of trimethylgallium (indium) with appropriate 1-phenyl-3-N-(arylimino)-1-butanones. The complexes obtained have been characterized by elemental analysis, ¹H NMR, IR and mass spectroscopy. Structure of 2 has been determined by X-ray single-crystal analysis, in which Ga atom is four coordinated. Complexes 1-6 emit colors from blue to green (463-491 nm) when irradiated by UV light. The electroluminescent (EL) properties of 1-6 were examined by fabricating EL devices using 1-6 as emitter, respectively. The EL bands are located in the green region (509-522 nm).     

On the mechanism of electroluminescence emission by porous silicon layers

The analytical treatment of a model considering the electrooxidation of p-porous silicon layers under galvanostatic conditions is able to give account of experimental facts such as the shape and location of the electroluminescence peak as well as of the spectral shift of the electroluminescence peak produced by oxidation. The proposed model considers electroluminescence to be the result of electron injection into the conduction band by an adsorbed intermediate produced by electrooxidation of the surface coverage with hydrogen or siloxene of the silicon nanocrystallites. The access of holes to the surface is made possible by low accumulation layer conditions and is the rate determining step in the electroluminescence mechanism. In this way it is possible to give a satisfactory explanation to the shift towards the blue experimented by the electroluminiscence emission maximum as a consequence of electrooxidation.