Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

A call admission and rate control scheme for multimedia support over IEEE 802.11 wireless LANs

Quality of service (QoS) support for multimedia services in the IEEE 802.11 wireless LAN is an important issue for such WLANs to become a viable wireless access to the Internet. In this paper, we endeavor to propose a practical scheme to achieve this goal without changing the channel access mechanism. To this end, a novel call admission and rate control (CARC) scheme is proposed. The key idea of this scheme is to regulate the arriving traffic of the WLAN such that the network can work at an optimal point. We first show that the channel busyness ratio is a good indicator of the network status in the sense that it is easy to obtain and can accurately and timely represent channel utilization. Then we propose two algorithms based on the channel busyness ratio. The call admission control algorithm is used to regulate the admission of real-time or streaming traffic and the rate control algorithm to control the transmission rate of best effort traffic. As a result, the real-time or streaming traffic is supported with statistical QoS guarantees and the best effort traffic can fully utilize the residual channel capacity left by the real-time and streaming traffic. In addition, the rate control algorithm itself provides a solution that could be used above the media access mechanism to approach the maximal theoretical channel utilization. A comprehensive simulation study in ns-2 has verified the performance of our proposed CARC scheme, showing that the original 802.11 DCF protocol can statically support strict QoS requirements, such as those required by voice over IP or streaming video, and at the same time, achieve a high channel utilization. Hongqiang Zhai received the B.E. and M.E. degrees in electrical engineering from Tsinghua University, Beijing, China, in July 1999 and January 2002 respectively. He worked as a research intern in Bell Labs Research China from June 2001 to December 2001, and in Microsoft Research Asia from January 2002 to July 2002. Currently he is pursuing the PhD degree in the Department of Electrical and Computer Engineering, University of Florida. He is a student member of IEEE. Xiang Chen received the B.E. and M.E. degrees in electrical engineering from Shanghai Jiao Tong University, Shanghai, China, in 1997 and 2000, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Florida, Gainesville, in 2005. He is currently a Senior Research Engineer at Motorola Labs, Arlington Heights, IL. His research interests include resource management, medium access control, and quality of service (QoS) in wireless networks. He is a Member of Tau Beta Pi and a student member of IEEE. Yuguang Fang received a Ph.D degree in Systems and Control Engineering from Case Western Reserve University in January 1994, and a Ph.D degree in Electrical Engineering from Boston University in May 1997. From June 1997 to July 1998, he was a Visiting Assistant Professor in Department of Electrical Engineering at the University of Texas at Dallas. From July 1998 to May 2000, he was an Assistant Professor in the Department of Electrical and Computer Engineering at New Jersey Institute of Technology. In May 2000, he joined the Department of Electrical and Computer Engineering at University of Florida where he got the early promotion with tenure in August 2003 and has been an Associate Professor since then. He has published over one hundred (100) papers in refereed professional journals and conferences. He received the National Science Foundation Faculty Early Career Award in 2001 and the Office of Naval Research Young Investigator Award in 2002. He is currently serving as an Editor for many journals including IEEE Transactions on Communications, IEEE Transactions on Wireless Communications, IEEE Transactions on Mobile Computing, and ACM Wireless Networks. He is also actively participating in conference organization such as the Program Vice-Chair for IEEE INFOCOM’2005, Program Co-Chair for the Global Internet and Next Generation Networks Symposium in IEEE Globecom’2004 and the Program Vice Chair for 2000 IEEE Wireless Communications and Networking Conference (WCNC’2000).     

光纤通信在市内接入网的应用

先说明市内接入网的单位用户和住家用户两大类使用通信和电视、交互型和分配型业务的要求不相同，相应地对光纤传输的应用须作不同的考虑，文中认为；光纤从市内交换局直连办公大楼是合乎现实需要的，而对于居民住家，宜选用光纤连至路边或光纤与同轴结合和适当利用无源光网络等方案，俟将来时机成熟才实行光纤连至每一家，文末有概括总结，说明接入网不同于长途网，接入网的光纤系统可以使用常规单模光纤，工作于波长1．3μm，而光放大器和波分多路系统不是普遍需要，但光电子集成在光端机中是必要的。     

DVB条件接收系统中独立加扰器的设计与实现

本文介绍DVB条件接收系统的基本结构，详细分析了条件接收系统的工作原理，并给出条件接收系统中独立加扰器SAS(Stand Alone Scrambler)的具体实现方案。     

基于TMN的接入网网管系统模型

本文介绍了 TMN 网管系统的体系结构,进而讨论了接入网网管系统的体系结构和管理接口的有关问题。     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。     

基于预前控制异步电机直接转矩控制方案的研究

在传统异步电动机直接转矩控制方案中，由于负载的变化规律不可预测，因此其常会带来较大的开关频率的变化，为此提出了一种基于预前控制的异步电动机直接转矩控制的方法。该方法依据前一个周期的磁链和转矩误差，对下一个开关周期所应施加到异步电动机的定子电压矢量进行预测，然后借助空间矢量PWM的方法，合成此开关电压矢量。样机实验结果表明，该方案不但能维持逆变器的开关频率基本恒定，而且还具有比传统直接转矩控制更为优良的动静态特性。     

Surface morphologies of anthracene single crystals grown from vapor phase

The morphologies and lattice structures of anthracene single crystals grown from the vapor phase were investigated using optical microscopy, phase contrast microscopy, atomic force microscopy (AFM), and X-ray diffraction analysis. Common morphologies with hexagonal large planes were observed irrespective of crystal size. The observation of certain surface morphologies with a phase contrast microscopy revealed that the spiral steps originated from screw dislocations present on the (0 0 1) planes. Moreover, the center and edge of the (0 0 1) planes had large curvatures, similar to hills. Resultantly, quarter-monolayer (ML) steps were observed on the large and flat planes between both hills.     

ABB变频器在双馈发电机试验台上的应用

本文介绍了风力发电系统目前存在的技术方案，重点介绍了ABB用于双馈式风力发电系统的变频产品ACS800—67的特性，并对由其构建的发电机测试平台的案例进行了实验分析。