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1.
发光二极管的研究现状与发展趋势 总被引:4,自引:1,他引:3
Ⅱ-Ⅵ族,Ⅲ-Ⅴ族化全物半导体是制作显示器件的重要材料,随着制作工艺日趋成熟,发光二极管已广泛地应用于 民经济各部门。要方要介绍了国内外发光二有管的研究两头和发展趋势。 相似文献
2.
考虑用激光器与调制器直接耦合以及耦合槽的影响,用散射矩阵法及二步等效反射率法,对沟槽耦合腔激光器的波长调谐和频率调制特性的分析表明,数学处理简单,物理图像清晰。 相似文献
3.
Olga Bori Timo J. Tolmunen Erik Kollberg Margaret A. Frerking 《International Journal of Infrared and Millimeter Waves》1992,13(6):799-814
The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with and HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding the the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results. 相似文献
4.
We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array. The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum (FWHM) of less than 3°, and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°. 相似文献
5.
6.
Joseph A. Scalise 《Microelectronics Reliability》1998,38(3):353
Microcircuit package qualification testing is used to establish the reliability of integrated circuit processes and devices as they relate to part packaging. This paper presents the results of package qualification tests conducted on plastic encapsulated microcircuits (PEMs) and plastic discrete devices (diodes, transistors) used in avionics applications. Highly accelerated stress test (HAST) and temperature cycle (TC) test results, including part failure mechanisms and associated failure rates, are provided. A variety of plastic package styles and integrated circuit functions have been tested. Examples of package styles tested include small outline (SO), plastic leaded chip carrier (PLCC), thin small outline package (TSOP), plastic quad flat package (PQFP) and plastic dual-in-line (PDIP).Manufacturers' devices have been evaluated and various plastic compounds have been compared to determine which provide optimum reliability. The testing showed that package qualification performance of PEMs is affected by type of compound, passivation (including die coat) and die size. HAST failures are caused by moisture penetration of the package while temperature cycle failures result from coefficient of thermal expansion (CTE) mismatch effects. 相似文献
7.
本文是可见光激光二极管开发现状与市场的最后部分,主要介绍器件应用领域,产销量,价格与趋势. 相似文献
8.
YUZhijing TIANWei 《半导体光子学与技术》1997,3(4):311-317
The principle of optical fiber pressure sensing probe with common diaphragm and the method for stabilizing the laser diodes are described in this paper at first.Then we discussed the improvement in characteristics of the system by means of taking the techniques of reference light channel and ratio measurement. 相似文献
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10.
Jiahui Liu Junjie Liu Prof. Dr. Haoyuan Li Prof. Dr. Zhengyang Bin Prof. Dr. Jingsong You 《Angewandte Chemie (International ed. in English)》2023,62(31):e202306471
Narrowband organic light-emitting diodes (OLEDs) are receiving significant attention and have demonstrated impressive performance in blue and green OLEDs. However, developing high-performance narrowband red OLEDs remains a highly desired yet challenging task. Herein, we have developed narrowband red fluorescent emitters by utilizing a boron-dipyrromethene (BODIPY) skeleton in combination with a methyl-shield strategy. These emitters exhibit small full-width at half-maxima (FWHM) ranging from 21 nm (0.068 eV) to 25 nm (0.081 eV) and high photoluminescence quantum yields (ΦPL) ranging from 88.5 % to 99.0 % in toluene solution. Using BODIPY-based luminescent materials as emitters, high-performance narrowband red OLEDs have been assembled with external quantum efficiency as high as 18.3 % at 623 nm and 21.1 % at 604 nm. This work represents, to our knowledge, the first successful case of achieving NTSC pure-red OLEDs with the Commission Internationale de l’Éclairage (CIE) coordinates of [0.67, 0.33] based on conventional fluorescent emitters. 相似文献