SMT测试技术

主要介绍了当前用于检测组装后PCB的缺陷和故障的一些常见测试技术 ,并对未来的发展趋势进行了初步探讨     

Decay kinetics of the green emission in tungstates and molybdates

Luminescence characteristics of a number of undoped and variously doped PbWO₄ crystals were studied at 0.4–400 K by the time-resolved spectroscopy and compared with those of ZnWO₄,CdWO₄ and PbMoO₄ crystals. Two types of green emission centres are detected in PbWO₄ crystals. The centres of the first type are responsible for the low-temperature 2.3–2.4 eV emission observed under excitation around 3.90–3.95 eV. The structure and parameters of their relaxed excited states were determined. It was concluded that the origin of defects responsible for the green emission of the first type could vary for different crystals. The centres of the second type with the emission around 2.5 eV appear in crystals containing oxygen vacancies after the thermal destruction of Pb⁺-WO₃ centres at T>180 K. Decomposition of the exciton and various defect-related states was also studied, and activation energies of this process were calculated.     

Defect clusters in titanium-substituted spinel-related lithium ferrite

The cation distribution in spinel-related titanium-substituted lithium ferrite, Li_0.5+0.5xFe_2.5−1.5xTi_xO₄ has been explored using interatomic potential and ab initio calculations. The results suggest that the cation distribution with Ti⁴⁺ substituting for Fe³⁺ on octahedral B sites and excess Li⁺ substituting for Fe³⁺ on tetrahedral A sites is stabilised by the formation of clusters of two octahedrally coordinated Ti⁴⁺ ions and one tetrahedrally coordinated Li⁺ ion linked through a common oxygen.     

液晶显示器生产中的激光退火和缺陷修复

由于在大面积玻璃基底上制备由多层材料构成的高质量薄膜晶体管象元驱动阵列工艺的复杂性，使有源矩阵液晶显示器（AMLCD）的成品率低、价格高。利用激光对AMLCD进行非晶硅薄膜的退火和电路缺陷的修复，可有效的改善AMLCD的性能，提高成品率和降低成本。本文在介绍了激光对非晶硅薄膜退火和电路缺陷修复常用激光器的特性后，讨论了激光对不同类型缺陷修复的原理和过程。最后，分析比较了不同类型激光退火方法的特点。     

The steady state growth rate of a recrystallization front in regions of heterogeneous dislocation density

The paper investigates whether a change from a homogeneous to an inhomogeneous dislocation distribution, assumed to be caused by a slight additional deformation, can lead to an increase of the recrystallization temperature of a deformed metal. In this case, the higher temperature would indicate a more stable deformation structure despite the increase of stored energy. The recrystallization temperature is related to the growth rate. Hence, the steady state velocity of a recrystallization front moving either parallel or vertically to the stripes of a simplified two-dimensional heterogeneous dislocation distribution of parallel sections of higher and lower dislocation densities is calculated. The results show that if a front growths through the high and low density sections in series an overall slower rate despite higher mean dislocation density is, indeed, possible. However, growing in the parallel arrangement always leads to a higher growth rate compared with the homogeneous case of slightly less stored energy. Since in a real structure the faster growth is likely to succeed, the recrystallization temperature observed will be lowered with additional deformation in accordance with experimental experience.     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

Methane activation on Ni(1 1 1): Effects of poisons and step defects

We have, theoretically and experimentally, investigated the dissociation of methane on the terraces and steps of a Ni(1 1 1) surface. Using Density Functional Theory (DFT) total energy calculations combined with Ultra High Vacuum (UHV) experiments, we find that the steps exhibit a higher activity than the terraces. We have, furthermore, investigated how carbon and sulfur present on the surface will deactivate the steps, leaving only the terraces active. We find the intrinsic sticking probabilities of methane on the steps and terraces at 500 K to be 2.8 × 10⁻⁷ for the steps and 2.1 × 10⁻⁹ for the terraces, in complete agreement with our calculated difference in activation energy of 17 kJ/mol.     

On the ion exchange defects in aluminosilicate lattices

Summary Samples of synthetic leucite and boron-substituted leucite are investigated by infrared spectroscopy and spectrally resolved thermoluminescence. Evidence is obtained in favour of the assumption that point defects in aluminosilicate lattices are originated by exchanges of Si⁺⁴ and Al⁺³ ions lying in different cells.     

Chalcogenide Glasses Based on Germanium Disulfide for Second Harmonic Generation

High second‐order susceptibilities are created by thermal poling in bulk germanium disulfide based chalcogenide glasses. Experimental conditions of the poling treatment (temperature, voltage, time) were optimized for each glass composition. The second‐order nonlinear signals were recorded by using the Maker fringes experiment and a second‐order coefficient χ⁽²⁾ up to 8 pm V^–1 was measured in the Ge₂₅Sb₁₀S₆₅ glass. This value is obtained using a simulation based on accurate knowledge of the thickness of the nonlinear layer. Two mechanisms are proposed to explain the creation of a nonlinear layer under the anode: the formation and the migration of charged defects towards the anode may mainly occur in Ge₂₀Ga₅Sb₁₀S₆₅ and Ge₂₅Ga₅S₇₀ glasses, whereas the migration of Na⁺ ions towards the cathode may be responsible for the accumulation of negative charges under the anode in Ge₃₃S₆₇ and Ge₂₅Sb₁₀S₆₅ glasses. Different electronic conductivity behaviors seem to be at the origin of the phenomenon. In parallel, the potential effect of the poling treatment on the structural and electronic properties is studied using Raman spectroscopy and secondary ion mass spectroscopy measurements.     

Characterisation of oxygen defects in calciumdifluoride

We study the aggregation of oxygen dipoles well dispersed in a CaF₂ crystal upon annealing at temperatures ranging from 370 to 420 K. The concentration of oxygen dipoles is monitored by measuring the intensity of the ionic thermocurrent peak as well as by absorption and luminescence spectroscopies. Results from three methods agree within experimental error and yield an activation energy of (1.2±0.1) eV for the diffusion of isolated oxygen centres in the crystal.