全文获取类型
收费全文 | 952篇 |
免费 | 86篇 |
国内免费 | 60篇 |
专业分类
化学 | 193篇 |
晶体学 | 4篇 |
力学 | 44篇 |
综合类 | 1篇 |
数学 | 29篇 |
物理学 | 276篇 |
无线电 | 551篇 |
出版年
2024年 | 5篇 |
2023年 | 91篇 |
2022年 | 114篇 |
2021年 | 133篇 |
2020年 | 85篇 |
2019年 | 41篇 |
2018年 | 24篇 |
2017年 | 43篇 |
2016年 | 36篇 |
2015年 | 29篇 |
2014年 | 38篇 |
2013年 | 32篇 |
2012年 | 32篇 |
2011年 | 40篇 |
2010年 | 25篇 |
2009年 | 24篇 |
2008年 | 24篇 |
2007年 | 25篇 |
2006年 | 24篇 |
2005年 | 20篇 |
2004年 | 19篇 |
2003年 | 23篇 |
2002年 | 13篇 |
2001年 | 13篇 |
2000年 | 23篇 |
1999年 | 15篇 |
1998年 | 9篇 |
1997年 | 14篇 |
1996年 | 10篇 |
1995年 | 9篇 |
1994年 | 12篇 |
1993年 | 9篇 |
1992年 | 4篇 |
1991年 | 8篇 |
1990年 | 6篇 |
1989年 | 9篇 |
1988年 | 7篇 |
1987年 | 1篇 |
1986年 | 1篇 |
1984年 | 1篇 |
1983年 | 1篇 |
1982年 | 1篇 |
1980年 | 1篇 |
1978年 | 1篇 |
1976年 | 2篇 |
1974年 | 1篇 |
排序方式: 共有1098条查询结果,搜索用时 359 毫秒
1.
In this paper, we strive to propose a self-interpretable framework, termed PrimitiveTree, that incorporates deep visual primitives condensed from deep features with a conventional decision tree, bridging the gap between deep features extracted from deep neural networks (DNNs) and trees’ transparent decision-making processes. Specifically, we utilize a codebook, which embeds the continuous deep features into a finite discrete space (deep visual primitives) to distill the most common semantic information. The decision tree adopts the spatial location information and the mapped primitives to present the decision-making process of the deep features in a tree hierarchy. Moreover, the trained interpretable PrimitiveTree can inversely explain the constituents of the deep features, highlighting the most critical and semantic-rich image patches attributing to the final predictions of the given DNN. Extensive experiments and visualization results validate the effectiveness and interpretability of our method. 相似文献
2.
基于深度学习的方法,在HL-2A装置上开发出了一套边缘局域模(ELM)实时识别算法。算法使用5200次放电数据(约24.19万数据切片)进行学习,得到一个深度为22层的卷积神经网络。为衡量算法的识别能力,识别了HL-2A装置自2009年实现稳定ELMy H模放电以来所有历史数据(约26000次放电数据),共识别出1665次H模放电,其中误识别35次,误报率为2.10%。在实际的1634次H模放电中,漏识别4次,漏识别率为0.24%。该误报率和漏报率可以满足ELM实时识别的精度要求。识别算法在实时控制环境下,对单个时间点的平均计算时间为0.46ms,可以满足实时控制的计算速度要求。 相似文献
3.
深亚微米MOSFET衬底电流的模拟与分析 总被引:1,自引:0,他引:1
利用器件模拟手段对深亚微米MOSFET的衬底电流进行了研究和分析,给出了有效的道长度,栅氧厚度,源漏结深,衬底掺杂浓度以及电源电压对深亚微米MOSFET衬底电流的影响,发现电源电压对深亚微米MOSFET的衬底电流有着强烈的影响,热载流子效应随电源电压的降低而迅速减小,当电源电压降低到一定程度时,热载流子效应不再成为影响深亚微米MOS电路可靠性的主要问题。 相似文献
4.
5.
本文提出了一个深亚微米条件下的多层VLSMCM有约束分层层分配的遗传算法。该算法分为两步:首先进行超层分配,使各线网满足Crosstalk约束,且超层数目最少;然后进行各超层的通孔最少化二分层。与目前的层分配算法相比,该遗传算法具有目标全面,全局优化能力强等特点,是一种可应用于深亚微米条件下的IC CAD的有效分层方法。 相似文献
6.
获得了一种研究碲镉汞深能级的方法。通过分析迁移率 载子浓度与温度的关系,可以得到关于深能级的重要依据。 相似文献
7.
The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the
n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed
and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb
grown at 550°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized
surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized
impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity
was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb
layers were studied by comparing their photoluminescence spectra at 4.5K. 相似文献
8.
9.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
10.
采用自行研制的LB自动提膜装置,制备出大面积(10×8cm2)、高质量的PMMA超薄抗蚀剂膜,并将其用于高分辨率铬掩模版的研制。通过电子束曝光,湿法蚀刻,制作了分辨率优于0.5μm,特征线宽0.38μm的4(100mm)铬掩模版。 相似文献