测距仪中新型的脉冲激光光源

针对现有测距仪中脉冲激光器存在寄生多脉冲的问题，提出并实现新型的采用同步泵浦声光调Q方法的测距仪用激光器、消除了寄生脉冲并提高了激光器的峰值功率。     

The effects of crystal structure on optical absorption/photoluminescence of bis(8-hydroxyquinoline)zinc

In this paper, the transformation processes of two types of bis(8-hydroxyquinoline)zinc: Znq₂ dihydrate and anhydrous (Znq₂)₄ were investigated by X-ray diffraction (XRD), infrared spectra (IR), scanning electron microscope (SEM), differential scanning calorimetry (DSC) and thermogravimetry (TG). The effects of crystal structure on optical properties of bis(8-hydroxyquinoiline)zinc were analyzed. Znq₂ dihydrate can be transformed into anhydrous (Znq₂)₄ during heating under vacuum. Reversal transformation occurs by the interaction between chloroform and (Znq₂)₄. But (Znq₂)₄ was partially transformed into Znq₂ dihydrate by the interaction between ethanol and (Znq₂)₄. The different molecular structure results in different crystal stacking and electronic structure, thereby affect its optical properties.     

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm

We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB.     

多功能半导体激光医疗仪电源的研制

根据“多功能半导体激光医疗仪”整机的要求,采用同一电源对667nm和808nm半导体激光器实施供电。为避免电源在开、关机时对半导体激光管产生浪涌冲击,电源在设计中采用了适当的逻辑功能。并可保证对667nm激光器供电时,即使打开808nm激光器供电开关,也不对808nm半导体激光器供电,反之亦然。电源设有手动、计算机两种控制方法,及恒定功率、电流两种工作方式。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

1.30μmDFB激光器组件的设计和制做及其工作原理

本文自行设计和制作了１．３０μｍＤＦＢ激光器组件的讨论了光隔离和光耦合原理。由于采用的激光器－光隔离器－光纤的一体化结构，大大增加了该组件的可用性。在实验中得到高达５５％的耦合效率。     

半导体激光器到单模光纤耦合技术的现状及发展趋势

简要阐述了半导体激光器到单模光纤的耦合损耗来源，详细介绍和分析了耦合技术的发展和现状，并探讨了耦合技术的发展趋势。     

LD泵浦的声光调Q腔内倍频激光器

研制成用ＬＤ泵浦的声光调Ｑ的Ｎｄ：ＹＶＯ４－ＫＴＰ腔内倍频激光器，得到了ＴＥＭ００模、频率高达１００ｋＨｚ的稳定的５３２ｕｍ绿激光脉冲系列输出，阈值泵浦功率为２７ｍＷ；在连续５７０ｍＷ的泵浦功率下，绿激光脉冲的峰值功率达１１００Ｗ，脉宽为４．６ｕｓ；输出功率稳定，在±５℃的工作温度变化下，输出功率变化小于±２％。此种器件可望得到广泛的应用。     

LD泵浦的Nd∶YAG腔内倍频激光器及其模式

用KTP晶体研制成LD泵浦的YAG腔内倍频激光器,得到0.532μm连续绿色线偏振激光输出,阈值泵浦功率为41mW,输出功率为1.4mW,斜效率为1.7％。研究了泵浦光对倍频激光横模的影响。     

稀土元素在LD30铝合金真空钎焊中的作用

研究了添加La和Ce的Al-Si基钎料真空钎焊LD30铝合金接头的力学性能，微观组织形貌和EDS，并与未添加稀土元素的Al-Si基钎料真空钎焊接头进行对比。结果表明，添加稀土元素的LD30铝合金真空钎焊接头抗拉强度为288MPa，达母材抗拉强度的97．6％，明显高于未添加稀土的LD30合金真空钎焊接头。其机制在于La,Ce能够明显提高Al-Si基钎料与LD30铝合金的润湿性能，改善LD30铝合金真空钎焊接头焊缝及其基体中杂质元素的分布，促进钎料和母材中各元素的均匀扩散，从而提高真空钎焊接头的力学性能。