硅化物阻挡层对高压漏扩展MOS晶体管的影响

Silicide-block-film effects on drain-extended MOS （DEMOS） transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide （SRO）. The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier- injection （HCI） induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.     

Silicide-block-film effects on high voltage drain-extended MOS transistors

Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investi-gated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-cartier-injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.     

DEMOS在热载流子应力下的混合失效模式

研究了18V漏极延伸金属氧化物半导体场效应晶体管(DEMOS)在高栅极电压下的热载流子注入效应。实验观察到两种失效模式,分别是热空穴的注入效应和高栅压导致的阈值电压增大,发现其对器件损伤分别局限在漏极区域和沟道区域,对器件的性能影响正好相反,前者减少了漏极串联电阻,而后者增大了沟道电阻。描述了这两个失效模式的物理过程,分析并讨论了器件参数的退化曲线。讨论了如何提高DEMOS在高栅压下的抗热载流子的能力,指出了漏极上方的氧化层的质量和栅极氧化层中自由电荷数量,对于提高器件的可靠性至关重要。