爆磁压缩发生器通过脉冲变压器对脉冲形成线充电的理论分析

 将爆磁压缩等效为电流源的方法，对爆磁压缩发生器通过脉冲变压器对脉冲形成线充电进行了理论分析，得出爆磁压缩发生器在负载上产生电流波形（简称负载电流）为直线情况和任意电流波形情况下充电电流和充电电压的表达式。分析表明变压器耦合互感与负载电流随时间变化增长率是脉冲形成线充电的两个重要参数，脉冲形成线第一个充电电压峰值与变压器的耦合互感和负载电流波形斜率成正比，负载电流波形斜率的变化可以改变充电电压峰值的时间，斜率不断增加可以延长第一个充电电压峰值时间，从而可能增加充电电压的幅值，提高爆磁压缩发生器能量的利用效率。     

Steady-state electrolysis at a grooved or ridged plane

This study concerns an infinite plane whose smoothness is marred by a single defect: either a groove or a ridge. The blemished plane serves as an electrode supporting a diffusion-controlled steady-state process. By using a convenient coordinate transformation, the local current density at all points on the surface is determined exactly. The results are found to confirm intuitive expectations. Thus, compared with normal values on the plane remote from a groove, the electron transfer rate is diminished within the groove but enhanced along its margins. Similarly, an abnormally large transfer rate is encountered high on the ridge but the rate is subnormal on its lower flanks. The total current is demonstrated to be unchanged by the presence of the blemish. Received: 27 September 1996 / Accepted: 11 March 1997     

300kVA高温超导变压器电流引线漏热损耗的测量

电流引线是高温超导变压器的主要外部漏热来源,它的漏热量直接影响了超导变压器的经济性能,因此,引线的设计与漏热测量一直备受关注。文中构建了一个实验方案,运用量热法测量低压引线的漏热,并将试验结果与仿真预期值进行了对比和分析,从而验证了仿真设计的正确性。     

多功能半导体激光医疗仪电源的研制

根据“多功能半导体激光医疗仪”整机的要求,采用同一电源对667nm和808nm半导体激光器实施供电。为避免电源在开、关机时对半导体激光管产生浪涌冲击,电源在设计中采用了适当的逻辑功能。并可保证对667nm激光器供电时,即使打开808nm激光器供电开关,也不对808nm半导体激光器供电,反之亦然。电源设有手动、计算机两种控制方法,及恒定功率、电流两种工作方式。     

中国第三代移动通信技术发展概况与战略建议(上)

本文第一部分重点介绍了中国移动通信的现状以及国际3G的现状，并简单介绍了3G通信存在的几个问题。     

HL－1装置中LHCD和等离子体参数的关系

本文研究了在ＨＬ－１托卡马克的不同放电阶段的低混杂波驱动特性。给出了驱动电流及驱动效率和等离子体参数，如电子平均密度ｎｅ、等离子体电流Ｉｐ及纵向磁场的关系。也给出和分析了波驱动和入射波功率的关系。在放电平段，对正反向驱动效率进行了研究和比较。     

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films.     

超高速电流反馈集成运放电路与特性

介绍了超高速电流反馈集成运放电路结构，基本特性以及与电压反馈集成运放在性能上的差异。     

Dynamic Current Sharing in Paralleling Power MOSFET

By combining the theory with the practice,the dynamic current shar-ing in paralleling power MOSFET is analysed.The principles of choosing parameters in-fluencing dynamic current sharing are described,and some experiment results are given on the basis of these steps.