爆磁压缩发生器通过脉冲变压器对脉冲形成线充电的理论分析

 将爆磁压缩等效为电流源的方法，对爆磁压缩发生器通过脉冲变压器对脉冲形成线充电进行了理论分析，得出爆磁压缩发生器在负载上产生电流波形（简称负载电流）为直线情况和任意电流波形情况下充电电流和充电电压的表达式。分析表明变压器耦合互感与负载电流随时间变化增长率是脉冲形成线充电的两个重要参数，脉冲形成线第一个充电电压峰值与变压器的耦合互感和负载电流波形斜率成正比，负载电流波形斜率的变化可以改变充电电压峰值的时间，斜率不断增加可以延长第一个充电电压峰值时间，从而可能增加充电电压的幅值，提高爆磁压缩发生器能量的利用效率。     

基于CF的全集成MOSFET—C六阶低通滤波器的仿真分析

本文提出了以电流跟随器ＣＦ为基本电路元件的全集成ＭＯＳＦＥＴ－Ｃ精确连续时间六阶低通滤波器电路，并应用ＰＳＰＩＣＥ－Ⅱ通用模拟电路程序，对其幅频特性和相频特性进行了计算机仿真分析，得出了实用的结论。     

大面积1.54μm波长测距用InGaAs雪崩光电二极管

设计并研制成功适合人的眼睛安全测距应用的ＩｎＧａＡｓ雪崩光电二极管（ＡＰＤ）。器件直径为２００μｍ，工作在２１℃，１５４０ｎｍ波长时响应为０．６４Ａ／Ｗ，典型暗电流和噪声因子分别为３０ｎＡ和６．５。介绍了该器件的工作原理，设计和制作工艺。     

基于CDBA的电流模式多功能滤波器

文章提出了一种由电流差分缓冲放大器（CDBA）实现的两种电流模式多功能双二次滤波器，该滤波器具有可实现多种滤波功能、能独立地调节ω0和Q、灵敏度较低等特点。     

入侵检测系统技术现状及其发展趋势

阐述了入侵检测系统（IDS）的起源、发展和分类，介绍了它的结构和标准化工作，对入侵检测系统存在的问题及发展趋势作了概述。     

A Multi-component Matrix Loop Algebra and Its Application

A set of multi-component matrix Lie algebra is constructed. It follows that a type of new loop algebra A^- M-1 is presented. An isospectral problem is established. Integrable multi-component hierarchy is obtained by Tu pattern, which possesses tri-Hamiltonian structures. Furthermore, it can be reduced to the well-known AKNS hierarchy and BPT hierarchy. Therefore, the major result of this paper can be regarded as a unified expression integrable model of the AKNS hierarchy and the BPT hierarchy.     

Steady-state electrolysis at a grooved or ridged plane

This study concerns an infinite plane whose smoothness is marred by a single defect: either a groove or a ridge. The blemished plane serves as an electrode supporting a diffusion-controlled steady-state process. By using a convenient coordinate transformation, the local current density at all points on the surface is determined exactly. The results are found to confirm intuitive expectations. Thus, compared with normal values on the plane remote from a groove, the electron transfer rate is diminished within the groove but enhanced along its margins. Similarly, an abnormally large transfer rate is encountered high on the ridge but the rate is subnormal on its lower flanks. The total current is demonstrated to be unchanged by the presence of the blemish. Received: 27 September 1996 / Accepted: 11 March 1997     

具有势垒增强层的MSM光电探测器暗电流的计算

将具有完全晶格匹配势垒增强层的MSM－PD简化为一维模型，并通过理论分析，得出了它的暗电流特性，进一步得到器件暗电流与势垒增强层的关系。