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1.
Through improved synthesis process, resistance reduction effect of (K0.5Bi0.5)TiO3 (KBT) doping in Y–Mn co-doped BaTiO3 (BT) lead free ceramics was investigated. By different doping methods (doping K2O, Bi2O3 and TiO2 or synthesized KBT), medium Curie temperature (around 130 °C) lead free BT ceramics were obtained with ultra-low resistivity (13.84 Ωcm) with a temperature maintaining process at 700 °C. In this contribution, effect of sintering process and doping methods is discussed in detail. 相似文献
2.
Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour. 相似文献
3.
J Ashenfelter 《Pramana》2002,59(5):713-717
The ESTU began operation in 1988 and achieved the design voltage of 20 MV in 1990. Since that time, improvements to the gas
handling system, negative ion injector, accelerator terminal and control system have greatly increased its capability and
reliability. Today, the ESTU can efficiently produce an extensive assortment of stable ions at wide-ranging energies in support
of low-energy nuclear physics. 相似文献
4.
In this work we study nonnegativity and positivity of a discrete quadratic functional with separately varying endpoints. We introduce a notion of an interval coupled with 0, and hence, extend the notion of conjugate interval to 0 from the case of fixed to variable endpoint(s). We show that the nonnegativity of the discrete quadratic functional is equivalent to each of the following conditions: The nonexistence of intervals coupled with 0, the existence of a solution to Riccati matrix equation and its boundary conditions. Natural strengthening of each of these conditions yields a characterization of the positivity of the discrete quadratic functional. Since the quadratic functional under consideration could be a second variation of a discrete calculus of variations problem with varying endpoints, we apply our results to obtain necessary and sufficient optimality conditions for such problems. This paper generalizes our recent work in [R. Hilscher, V. Zeidan, Comput. Math. Appl., to appear], where the right endpoint is fixed. 相似文献
5.
Shuichi Ishida Keiki Takeda Atsushi Okamoto Ichiro Shibasaki 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):255
Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ013 meV, the electron effective mass of m*0.10m0 seven times of the band edge mass in bulk InSb and the effective g-factor of |g*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory. 相似文献
6.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. 相似文献
7.
Volodymyr Malyutenko Vitalii Borblik Victor Vainberg 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):563
An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera. 相似文献
8.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
9.
Yang Woo Shin 《Operations Research Letters》2004,32(4):364-373
We consider a single server queue with disasters where the arrivals of customers and disasters are correlated. When a disaster occurs, it removes all the customers in the system and there requires repair time for the system to be operated normally. The stationary queue length distribution at the embedded points and at an arbitrary time are presented. 相似文献
10.
The purpose of this paper is to give the Reid ``Roundabout Theorem' for quadratic functionals with general boundary conditions.
In particular, we describe the so-called coupled point and regularity condition introduced in [16] in terms of Riccati equation
solutions.
Accepted 27 February 1996 相似文献