2.3–21 GHz broadband and high linearity distributed low noise amplifier

This paper focuses on the design of a 2.3–21 GHz Distributed Low Noise Amplifier (LNA) with low noise figure (NF), high gain (S₂₁), and high linearity (IIP3) for broadband applications. This distributed amplifier (DA) includes S/C/X/Ku/K-band, which makes it very suitable for heterodyne receivers. The proposed DA uses a 0.18 μm GaAs pHEMT process (OMMIC ED02AH) in cascade architecture with lines adaptation and equalization of phase velocity techniques, to absorb their parasitic capacitances into the gate and drain transmission lines in order to achieve wide bandwidth and to enhance gain and linearity. The proposed broadband DA achieved an excellent gain in the flatness of 13.5 ± 0.2 dB, a low noise figure of 3.44 ± 1.12 dB, and a small group delay variation of ±19.721 ps over the range of 2.3–21 GHz. The input and output reflection coefficients S₁₁ and S₂₂ are less than −10 dB. The input compression point (P_1dB) and input third-order intercept point (IIP3) are −1.5 dBm and 11.5 dBm, respectively at 13 GHz. The dissipated power is 282 mW and the core layout size is 2.2 × 0.8 mm².     

靶面激光光斑尺寸原位测量的研究

提供了一种简便易行的靶面激光光斑尺寸原位测量的方法。从高斯光束的横向光强分布特性出发,建立了激光烧蚀斑半径与辐照激光能量、光斑尺寸、烧蚀阈值间的关系式,模拟分析发现辐照激光光斑尺寸对烧蚀斑半径随辐照能量变化曲线有较大影响。对于脉宽为2 ms,波长为1064 nm的激光,实验测量了不同能量激光辐照下相纸烧蚀斑半径,并用推导出的关系式拟合测量数据,获得了靶面处光斑尺寸和样品烧蚀阈值。同时,也测量了不同位置处的光斑尺寸和样品烧蚀阈值,对高斯光束束腰位置和样品烧蚀阈值的光斑尺寸效应进行了验证。研究结果表明该技术结果可靠,简单高效。该技术可以为高能激光与固体物质相互作用的基础研究和激光加工等应用领域中实现简单方便地测量靶面光斑尺寸提供帮助。     

Time-dependent Ginzburg–Landau equations for multi-gap superconductors

We numerically solve the time-dependent Ginzburg–Landau equations for two-gap superconductors using the finite-element technique. The real-time simulation shows that at low magnetic field, the vortices in small-size samples tend to form clusters or other disorder structures. When the sample size is large, stripes appear in the pattern. These results are in good agreement with the previous experimental observations of the intriguing anomalous vortex pattern, providing a reliable theoretical basis for the future applications of multi-gap superconductors.     

Current air quality analytics and monitoring: A review

This review summarizes the different tools and concepts that are commonly applied in air quality monitoring. The monitoring of atmosphere is extremely important as the air quality is an important problem for large communities. Main requirements for analytical devices used for monitoring include a long period of autonomic operation and portability. These instruments, however, are often characterized by poor analytical performance. Monitoring networks are the most common tools used for monitoring, so large-scale monitoring programmes are summarized here. Biomonitoring, as a cheap and convenient alternative to traditional sample collection, is becoming more and more popular, although its main drawback is the lack of standard procedures. Telemonitoring is another approach to air monitoring, which offers some interesting opportunities, such as ease of coverage of large or remote areas, constituting a complementary approach to traditional strategies; however, it requires huge costs.     

Enhancement of optical and electrical properties of SILAR deposited ZnO thin films through fluorine doping and vacuum annealing for photovoltaic applications

Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10⁻³ Ω cm) when the fluorine doping level was 5 at%.     

移动通信系统中功率控制研究

在阐述功率控制在移动通信系统中的发展过程的基础上，着重研究了WCDMA系统的功率控制，最后对功率控制未来的研究方向做了简要的分析。     

一个基于PE分层技术的电子政务网络平台

电子政务网络建设的主要目标就是建立一个开放的、基于标准的统一网络平台，并在该平台上实现政府不同部门之间的信息交换和资源共享，同时保证各部门信息的独立和安全。通过介绍电子政务网络建设中的主流技术——MPLSVPN，提出了一种基于该技术原理的PE分层技术，详细讨论了基于该分层技术的电子政务网络平台的实现过程和主要技术，并对其性能参数进行了测试与分析。     

氮化硅/石墨激光合金化涂层的组织结构与性能研究

为获得金属表面特别是高副接触金属表面含自润滑特性且具有高硬度耐磨特性的功能材料 ,研究了 45 # 钢表面激光合金化氮化硅 /石墨复合涂层的工艺方法、组织特征、界面形态及其形成机制 ,利用光学显微镜、扫描电镜和X射线能谱对所形成合金化层的元素分布和含量进行了分析 ,并对试样硬度进行了测定。结果表明 ,合金化层中元素Fe ,Co ,Si,C分布均匀 ;C含量达到了 15 6 9%,大部分以石墨的形式存在 ,具有一定的自润滑性能 ;但在形成合金化层的温度条件下 ,氮化硅分解严重 ;合金化层硬度提高的主要原因是Si Fe ,Co Fe固溶体的强化作用及高碳马氏体的生成和高硬度碳化物的存在。     

5Gb/s 0.25μm CMOS限幅放大器

采用TSMC 0.25μm CMOS技术设计实现了高速低功耗光纤通信用限幅放大器.该放大器采用有源电感负载技术和放大器直接耦合技术以提高增益,拓展带宽,降低功耗并保持了良好的噪声性能.电路采用3.3V单电源供电,电路增益可达50dB,输入动态范围小于5mVpp,最高工作速率可达7Gb/s,均方根抖动小于0.03UI.此外核心电路功耗小于40mW,芯片面积仅为0.70mm×0.70mm.可满足2.5,3.125和5Gb/s三个速率级的光纤通信系统的要求.