一种通过梯形PPMgLN波导倍频实现带宽可调谐光源的理论研究

本文设计了一种梯形的周期极化掺镁铌酸锂(PPMgLN)波导,并通过在传播方向上引入温度梯度来拓宽其倍频(SHG)过程的泵浦光源可接收带宽。通过有限差分的光束传输法,计算波导的有效折射率,并进行波导尺寸的设计。结果表明,通过改变梯形波导不同位置的温度,使其形成一个温度梯度,可拓宽泵浦光源的波长可接收带宽。本文所设计的PPMgLN波导最大泵浦光源可接收带宽为C波段,即1 530~1 565 nm,该波导可倍频C波段,得到输出波段带宽为765~782.5 nm,温度调谐范围为30~150 ℃。     

新颖的双通道输出高功率掺铒光纤宽带光源

在分析L波段放大自发辐射(ASE)谱产生原理的基础上,设计出一种新颖的双级结构掺铒光纤ASE宽带光源,该光源可在两个端口分别输出高功率的C波段和L波段的ASE谱.设计将C波段ASE谱注入到掺铒光纤中作为L波段ASE谱的二次抽运源,使得L波段ASE谱功率得到了有效提高.优化光源结构参量后从两个端口分别获得了12.97 dBm和12.81 dBm的C波段和L波段ASE宽带谱.将两个输出端口组合得到了功率为15.9 dBm,泵浦转换效率达到21.6%的C+L波段超宽带ASE光源.     

一种微带交指型滤波器的改良型设计

论述了用Ansoft公司的Designer微波设计软件设计一种改良型的微带交指型带通滤波器。描述了微带交指型滤波器的设计方法,通过实例对这种改良型的微带交指带通滤波器进行了计算机最优化仿真设计,并给出了优化结果。微带交指型滤波器结构紧凑、指标优良,是微波混合集成电路中常见的形式,原理上是由1/4波长平行耦合线滤波器的谐振器折叠而成。     

Gain evaluation of compact designing on Er/Yb codoped germanate glass channel waveguide

Bent waveguide structures (U- and F-bend) based on UV-sensitive Er³⁺/Yb³⁺ codoped germanate glass substrates have been designed to achieve high-gain C-band amplification. Using simulated-bend method, the optimal radius for curved structure is offered to be 1.90 cm with loss coefficient of 0.0015 dB/cm, as the substrate size is minimally schemed. In the wavelength range of 1528–1559 nm, obvious gain enhancement for the bent structure waveguides is anticipated, while, for the F-bend waveguide, the internal gain at 1533.8 nm wavelength is derived to be 22.55 dB, which is much higher than the value of 14.06 dB in the U-bend waveguide, and over three times higher than that of the straight one, after compensating both the bend loss and the transition loss. The simulation results indicate that the bent structure designing is beneficial in attaining high optical gain in Er³⁺/Yb³⁺ codoped germanate glass substrates, which assures that long-period grating can be applied to implement practical C-band gain-flattened amplification.     

基于微波多层板的小型化多通道接收前端设计

基于微波多层板技术,通过对单片微波集成电路(MMIC)、微机电系统(MEMS)和低温共烧陶瓷(LTCC)滤波器等微组装工艺的优化和分析,使多通道接收前端进一步实现小型化设计和应用。同时,对电路和结构进行改进,使前端组件具有更好的幅相一致性和高隔离度。最终实现的C频段四通道接收前端尺寸为120 mm×50 mm×12 mm,幅相一致性分别小于±0.8 d B和±5°,通道间隔离度高于60 d Bc。该设计方法的实现为小型化多通道接收前端的工程化应用提供了一种有效的解决方案。     

Experimental and theoretical studies on a double-pass C-band bismuth-based erbium-doped fiber amplifier

Performance of a Bismuth-based Erbium-doped fiber amplifier is experimentally and theoretically investigated using 1480 nm pumping with double-pass scheme. In the theoretical analysis, the rate and power propagation equations are solved to examine the optimum length for the C-band operation as well as the gain and noise figure characteristics. The calculated small signal gain is 38 dB with gain variation of less than 3 dB. The measured gain is 4 dB lower due to spurious reflections which were ignored in the theoretical analysis. At input signal power of 0 dBm, a gain of 14.5 dB is obtained experimentally with gain variation of less than 1 dB within the wavelength region from 1530 to 1565 nm. The noise figure is less than 12 dB within this region.     

一种集成电长度补偿功能的C频段五通道接收组件

介绍了一种C频段五通道接收组件的设计方法。阐述了接收组件的工作原理,给出了功能实现框图,分析了电长度补偿单元、通道选择单元、幅相控制单元、信号合成单元共4个部分的设计方案。采用盘旋同轴线方案实现了电长度补偿,补偿最大值达635o。接收组件集成了限幅、通道选择、5位移相、5位衰减、电长度补偿、信号合成、电压转换等功能。接收组件的测试结果为噪声系数3.5 dB,增益25 dB,输入输出驻波比小于1.5：1,总功耗780 mW。     

C 波段定向共形微带天线的设计

本文研究设计了某C 波段共形微带天线。该天线在60mm*60mm 的有限尺寸范围内由4 个辐射单元构成 了一个2*2 的微带阵列天线。辐射单元采用开槽的形式,通过调整馈线插入深度,使馈线与贴片单元达到良好的阻 抗匹配。从仿真结果和实测结果可以看出,该天线电压驻波比在0 f ±20 MHz 的频率范围内均小于1.5,且实测方向 图与仿真方向图非常吻合,在0 f 处天线增益达到8.4dB,满足设计指标要求,性能优良,可以满足军事飞行器的使 用要求。     

C波段400MHz带宽多注速调管的研制

介绍了一种C波段多注速调管的研制。该管工作在矩形腔高次模式,设计目标是在400MHz工作频率范围内输出200kW脉冲功率,工作比3%,采用周期反转永磁聚焦。该管由9个谐振腔构成群聚段,多级滤波器加载双间隙谐振腔构成输出回路。本文介绍了设计方案中的一些考虑、部分模拟计算、扩展带宽的措施和实际制管结果,并指出进一步研制方向。     

Design of MEMS C-Band Microstrip Antenna Array Based on High-Resistance Silicon for Intelligent Ammunition

In recent years, microstrip antennas have been more widely applied in satellite communications, mobile phones, unmanned aerial vehicle (UAV), and weapons. A micro-electro-mechanical systems-based (MEMSbased) high-resistance silicon C-band microstrip antenna array has been designed for the intelligent ammunition. The center frequency is 4.5 GHz. A cavity has been designed in substrate to reduce the dielectric constant of silicon and high-resistance silicon has been used as the material of substrate to improve the gain of antenna. It is very easy to be manufactured by using MEMS technology because of the improved structure of the antenna. The results show that the gain of the antenna is 8 dB and voltage standing wave ratio (VSWR) is less than 2 by the analysis and simulation in high frequency structure simulator (HFSS).