双极关键工艺的在线统计分析

采用了双极晶体管作为双极工艺的测试结构,将在线工艺的统计分析理论应用于双极工艺,研制了双极工艺的统计分析软件。最后给出了双极工艺的某些分析结果。     

低温硅双极晶体管基区优化设计

常规双极晶体管在７７Ｋ下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Ｇｕｍｍｅｌ数，基区方块电阻，渡越时间和穿通电压等参数与温度及基区掺杂的关系，然后讨论了低温双极器件基区的优化设计问题。     

Fundamental studies on the intermediate layer of a bipolar membrane: Part III. Effect of starburst dendrimer PAMAM on water dissociation at the interface of a bipolar membrane

Starburst dendrimer polyamidoamine (PAMAM) with ellipsoidal or spheroidal shape is structure-regular and has much more amino groups than conventional polymers. This paper investigates the possibility of these amino groups on water dissociation in a bipolar membrane interface. To do this, a bipolar membrane is prepared by casting the solution of sulfonated poly(phenylene oxide) (SPPO) in dimethyl formamide (DMF) on a commercial anion exchange membrane that is immersed in PAMAM aqueous solution in advance. The existence of PAMAM adsorbed on the membrane is proved by X-ray photoelectron spectroscopy (XPS), and the adsorption amount is evaluated by weighting method. The junction thickness of the prepared bipolar membrane is determined by electrochemical impedance spectroscopy (EIS), and the performance is evaluated by current–voltage curves. The experiments show that both the generation and concentration of PAMAM would strongly affect the characteristics of the bipolar membranes. There exists a transitional concentration for various generations PAMAMs to catalyze effectively the water dissociation, and above or below the transitional concentration the performance of bipolar membranes is decreasing. The higher the generation, the lower the concentration. Moreover, at a fixed solution concentration, there is not the simple relation of monotone decreasing or increasing between the performance of bipolar membranes and the generations of PAMAMs. All these can be explained according to the characteristics of PAMAMs combined with available water dissociation theory.     

功能性超薄有序分子沉积膜的制备及其结构研究

1991年G.Decher等首次探讨了阴阳离子与聚电解质交替沉积制备有机超薄膜的方法。我们在完善成膜技术和发展成膜基质的基础上,详细研究了其成膜过程与膜的结构,并定义这种新的自组装超薄有序膜为分子沉积膜——MD膜。MD膜是利用阴阳离子的静电吸附反应特性,通过相反离子体系的交替分子沉积制备的层状有序自组装多层超薄膜。需要指出的是,分子沉积既是有机超薄膜的制备技术,本身又是一种自组装超薄有序膜。MD膜制备工艺简单,热稳定性和长期稳定性好,不受基体形状与面积限制。     

Low voltage bipolar resistive switching in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode

In this letter, resistive switching phenomena in self-assembled nanodot network of Polyvinylidene fluoride (PVDF) polymer in a capacitor geometry of Hg/PVDF/Au/Cr/Si is investigated. A stable & bipolar resistive switching with a set voltage ranging from 0.35 V to 0.9 V & reset voltage with a range of −0.08 V to −0.25 V is detected. A practical resistance ratio between HRS and LRS of 10–25 may have great potential in organic memories. Possible mechanism for the bipolar switching is discussed with the filament type conduction mechanism. Furthermore, the low voltage switching is elucidated with the high current density associated filament formation and it is explicated using the parallel resistor model.     

Effect of sweeping voltage and compliance current on bipolar resistive switching and white-light controlled Schottky behavior in epitaxial BaTiO3 (111) thin films

Bipolar resistive switching (RS) phenomenon without required electroforming has been observed in epitaxial (111)-oriented BaTiO₃ (BTO) thin films deposited by PLD technique on conducting Nb-doped substrate of SrTiO₃ (NSTO). Negative differential resistance (NDR) is observed at about −5 V when the maximum of positive voltage exceeds 7 V and the compliance current is more than 1.5 mA. And bipolar resistive switching has also been observed. In addition, the resistance of LRS decreases with increasing compliance current or the maximum of positive voltage while that of HRS barely changes, and the resistance of HRS increases with increasing the absolute of maximum of negative voltage while that of LRS scarcely changes. A typical rectifying behavior is observed when the maximum of positive voltage is less than 4 V (such as 2 V). In this case, the reverse biased current is strongly enhanced under illumination of white-light, and vice versa. The resistance of LRS and HRS can be controlled by the applied voltage or the compliance current. The rectifying behavior can be controlled by the white-light. The transition from rectifying behavior to bipolar resistive switching can be controlled by the applied voltage. The above results were discussed by considering the oxygen vacancies that can trap or release electrons as a trapping layer at the Pt/BTO interface.     

Rational design of donor–π–acceptor n-butyl-1,8-naphthalimide-cored branched molecules as charge transport and luminescent materials for organic light-emitting diodes

Four D–π–A bipolar molecules with n-butyl-1,8-naphthalimide (BNI) fragments as acceptors, acetylenes as π-spacers, and different aromatic groups as donors have been designed to explore their optical, electronic, and charge transport properties as charge transport and luminescent materials for organic light-emitting diodes (OLEDs). The frontier molecular orbitals (FMOs) and local density of states analysis have turned out that the vertical electronic transitions of absorption and emission are characterized as intramolecular charge transfer (ICT). The calculated results show that their optical and electronic properties are affected by the different donors of the bipolar molecules. Our results suggest that D–π–A 1,8-naphthalimide derivatives with donors triphenylamine (1), 1-nitrobenzene (2), anisole (3), and 4-phenylbenzo[c][1,2,5]thiadiazole (4) fragments are expected to be promising luminescent materials. Furthermore, 2–4 are expected to be promising candidates for both electron and hole transport materials as well as potential ambipolar charge transport material, whereas BNI and 1 can serve as hole transfer materials only. We have also predicted the mobility of 4 with better performance in three different space groups. On the basis of investigated results, we proposed a rational way for the design of charge transport and/or luminescent materials simultaneously.     

Recent progress in bipolar electropolymerization methods toward one-dimensional conducting polymer structures

Recent studies on electropolymerization methods toward one-dimensional conducting polymer structures are summarized in this review. In particular, advanced techniques for templated electropolymerization of aromatic monomers, in which migration of monomers into nanopores of the template is highly enhanced by using electrophoretic effect, are described. For templateless approach, electric field–driven bipolar electropolymerization of 3,4-ethylenedioxythiophene monomer is introduced as a strong tool to fabricate the corresponding conducting polymer fibers and films grown in the direction of an applied electric field.     

PDSOI CMOS SRAM单元临界电荷的确定

PDSOI CMOS SRAM单元的临界电荷(Critical Charge)是判断SRAM单元发生单粒子翻转效应的依据.利用针对1.2μm抗辐照工艺提取的PDSOI MOSFET模型参数,通过HSPICE对SRAM 6T存储单元的临界电荷进行了模拟,指出了电源电压及SOI MOEFET寄生三极管静态增益β对存储单元临界电荷的影响,并提出了在对PDSOI CMOS SRAM进行单粒子辐照实验中,电源电压的最恶劣偏置状态应为电路的最高工作电压.