Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

La掺杂对BLT薄膜微观结构与性能的影响

采用sol-gel工艺低温制备了Si基Bi4–xLaxTi3O12(BLT)铁电薄膜。研究了La掺杂量对薄膜微观结构、介电和铁电性能的影响。结果表明,600～650℃退火处理的BLT薄膜表面平整无裂纹,晶粒均匀,无焦绿石相或其它杂相,薄膜为多晶生长;La掺杂量x在0.5～0.85的BLT薄膜介电与铁电性能优良,其εr和tanδ分别介于284～289和(1.57～1.63)×10–2,4V偏压下薄膜的漏电流密度低于10–8A/cm2,Pr可达(13.0～17.5)×10–6C/cm2,Ec低至(102.5～127.8)×103V/cm。     

Synthesis, phase and microstructure characteristics of Pb(Zr0.52Ti0.48)O3–(Bi3.25La0.75)Ti3O12 ceramics

Ceramics with formula (1 − x)Pb(Zr_0.52Ti_0.48)O₃–x(Bi_3.25La_0.75)Ti₃O₁₂ (when x = 0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were prepared by a solid-state mixed-oxide method and sintered at temperatures between 950 °C and 1250 °C. It was found that the optimum sintering temperature was 1150 °C at which all the samples had densities at least 95% of theoretical values. Phase analysis using X-ray diffraction indicated the existence of BLT- as well as PZT-based solid solutions with corresponding lattice distortion. Scanning electron micrographs of ceramic surfaces showed a plate-like structure in BLT-rich phase while the typical grain structure was observed for PZT-rich phase. The grain sizes of both pure BLT and PZT ceramics were found to decrease as the relative amount of the other phase increased. This study suggested that tailoring of properties of this PZT–BLT system was possible especially on the BLT-rich side due to its large solubility limit.     

贴片焊层厚度对功率器件热可靠性影响的研究

贴片工艺是用粘接剂将芯片贴装到金属引线框架(一般是由铜制成)上的过程.富铅的Pb/Sn/Ag软焊料在功率器件封装贴片工艺中作为粘接剂应用十分广泛.从功率器件整体来看,贴片焊层毫无疑问是影响器件可靠性最重要的因素之一,其不仅具有良好的导电导热性能,而且该焊层能够吸收由于芯片和引线框架之间的热失配而产生的应力应变,保护芯片免于受到机械应力的损伤.基于Darveaux的热疲劳寿命分析模型,利用功率循环加速实验以及有限元方法具体分析了贴片焊层厚度BLT对于功率器件热可靠性的影响.并通过实验与仿真的结果,提出提高功率器件热可靠性的设计原则.     

TiO_2对BLT微波介质陶瓷结构及介电性能的影响

采用传统固相烧结工艺制备了BaO-La2O3-nTiO2(n为3,4,5和6)微波介质陶瓷,研究了该系陶瓷的相组成、微观形貌和微波介电性能之间的关系。结果表明:该系陶瓷具有较优介电性能的主晶相为斜方晶系BaLa2Ti4O12,并且第二相的存在对其介电性能影响明显。烧结体致密性是Q·f及τf的重要影响因素。当n为4时,获得相对较优的介电性能:εr为139.7,Q·f为1239.0GHz和τf达180.0×10–6℃–1。     

BIOLUMINESCENCE TOMOGRAPHY： BIOMEDICAL BACKGROUND,MATHEMATICAL THEORY,AND NUMERICAL APPROXIMATION

Over the last couple of years molecular imaging has been rapidly developed to study physiological and pathological processes in vivo at the cellular and molecular levels. Among molecular imaging modalities, optical imaging stands out for its unique advantages, especially performance and cost-effectiveness. Bioluminescence tomography （BLT） is an emerging optical imaging mode with promising biomedical advantages. In this survey paper, we explain the biomedical significance of BLT, summarize theoretical results on the analysis and numerical solution of a diffusion based BLT model, and comment on a few extensions for the study of BLT.     

投弃式仪器数据传输信道时频响应求解方法

针对传输函数求解船载投弃式仪器信道分布参数模型误差较大的问题, 提出了一种求解其数据传输信道时频响应的方法.时域响应采用时域有限差分(Finite Difference Time Domain, FDTD)法, 求得信道上任意位置的时域响应, 频域响应采用BLT(Baum-Liu-Tesche)方程结合电磁拓扑理论, 对信道的关键节点进行频域分析.最后测试了信道的时频域波形, 并与理论仿真结果进行对比, 结果表明:在仪器的工作频率内, 理论仿真与试验结果一致, 为进一步地研究终端电路的设计及传输方案的改进提供了理论基础.     

典型传输线网络对电磁脉冲的响应规律研究

针对关于电磁脉冲对各种低压传输网络及其重要电子终端设备的传导耦合规律、效应评估和损伤机理的研究较少,更缺乏有效防护措施的现状,运用电磁拓扑理论中的BLT方程进行了传输线网络对电磁脉冲响应规律的研究。首先进行了理论分析,在对传输线网络进行瞬态响应求解时,改进了以往利用繁琐的Fourier变换和反变换的计算方法,采用频域上的BLT方程求出传递函数,并结合时域上的卷积进行求解,缩短了计算时间、提高了计算结果的准确性。为了验证此方法的有效性,利用同轴线建立典型传输线网络,以方波为注入源进行了实验,实验测试结果与计算仿真结果基本一致。     

端接非线性负载的无畸变传输线瞬态分析半解析法

对带非线性负载的无畸变传输线瞬态分析问题,利用Volterra积分方程,建立了一种半解析方法。该方法利用Baum-Liu-Tesche(BLT)方程得到频域输入导纳、短路电流,然后利用级数展开和傅里叶变换的性质,得到Volterra积分方程中输入导纳、短路电流的瞬态解析表达,简化了Volterra积分方程,并可以避免奇异积分。     

基于时域BLT的多导体传输线串扰响应分析

当传输线上通有电压和电流信号时,会在其周围的传输线上产生串扰响应。采用时域BLT方程建立多导体传输线对多导体传输线的串扰模型,分析了不同数目和不同频率正弦波集总电压源激励下的多导体受扰线终端负载串扰电压响应特性。研究结果表明,受扰线终端负载上的串扰电压响应主要频点的个数与集总电压源的个数相同,响应频点与集总电压源的频率相等,响应幅值与相应电压源离受扰线的间距有关。