Facile non‐lithographic route to highly aligned silica nanopatterns using unidirectionally aligned polystyrene‐block‐polydimethylsiloxane films

Thin films (monolayer and bilayer) of cylinder forming polystyrene‐block‐polydimethylsiloxane (PS‐b‐PDMS) were shear aligned by the swelling and deswelling of a crosslinked PDMS pad that was physically adhered to the film during solvent vapor annealing. The nanostructures formed by self‐assembly were exposed to ultraviolet‐ozone to partially oxidize the PDMS, followed by calcination in air at 500 °C. In this process, the PS segments were fully decomposed, while the PDMS yielded silica nanostructures. The highly aligned PDMS cylinders were thus deposited as silica nanolines on the silicon substrate. Using a bilayer film, the center‐to‐center distance of these features were effectively halved from 38 to 19 nm. Similarly, by sequential shear‐alignment of two distinct layers, a rhombic array of silica nanolines was fabricated. This methodology provides a facile route to fabricating complex topographically patterned nanostructures. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1058–1064     

Extracting Light from Polymer Light‐Emitting Diodes Using Stamped Bragg Gratings

In this paper, we describe a method for increasing the external efficiency of polymer light‐emitting diodes (LEDs) by coupling out waveguided light with Bragg gratings. We numerically model the waveguide modes in a typical LED structure and demonstrate how optimizing layer thicknesses and reducing waveguide absorption can enhance the grating outcoupling. The gratings were created by a soft‐lithography technique that minimizes changes to the conventional LED structure. Using one‐dimensional and two‐dimensional gratings, we were able to increase the forward‐directed emission by 47 % and 70 %, respectively, and the external quantum efficiency by 15 % and 25 %.     

软印刷技术

软印刷技术是基于弹性体印章/模具来转移图形结构的微纳加工技术。详细介绍了软印刷技术中转移图形结构的多种方式,并探讨软印刷技术在微纳电子学、光学、传感器、生物等领域的广泛应用。对软印刷技术的弹性体印章/模具制备、聚二甲基硅氧烷的属性、理论研究等进行了探讨。     

磁浸没透镜的宽束曲轴像差分析的微分代数方法研究

微分代数是计算机数值分析领域中的一个非常有效的方法,可以实现任意高阶微分的准确计算.本文根据微分代数方法的基本原理,将其引入到磁浸没透镜的宽束曲轴像差的分析计算中,得到了任意阶曲轴像差的微分代数表达式.文中针对轴上磁场具有某种解析表达式的一个实际的磁浸没透镜系统,利用微分代数的曲轴像差分析方法,计算了它的曲轴像差,并给出了全部二阶和三阶几何像差的分布图形.     

基于规则的光学邻近矫正中规则的相关处理

讨论了如何选择适当的规则,如何建立简洁实用的规则库,如何应用规则库.提出了四种主要的光学邻近矫正规则,在实验结果中列举了规则库中的部分数据.利用规则矫正后的版图光刻得到的硅片图形有了明显的改善.规则库的自动建立部分 (OPCL)是基于规则的光学邻近矫正系统的重要组成部分.     

无掩模激光干涉光刻技术研究

介绍了一种不用掩模的光刻技术———激光干涉光刻技术的基本原理,给出了干涉光刻技术的主要特点及一些可能的应用,并对实验系统和初步实验结果进行了分析。研究表明,激光干涉光刻具有大视场和分辨率高和视场宽等优点。     

电子束和接触式曝光机的混合曝光技术

Ⅰ线光致抗蚀剂可以同时实用电子束和光学系统曝光，在50kV加速电压下，其曝光剂量为50-100μC/cm^2，曝光后在0.7%NaOH溶液内显影1分钟。其灵敏度比PMMA快5倍，分辩率为0.5μm。采用两方法制备CaAsPHEMT：一种用Ⅰ线光致抗蚀剂，对源、漏及栅全部都采用电子束曝光，制备了0.5μm栅长的GaAs PHEMT；另一种将源、漏及栅分割成两部分，其中精细部分由电子束曝光，其余部分由光学系统曝光，用这种方法制备了0.25μm栅长的GaAs PHEMT。Ⅰ     

Imprint lithography of pyramidal photonic pillars using hydrazine etching

An inexpensive method to produce a pyramidal-type 2D photonic structures in the silicon substrate was proposed. The method is based on the combination of imprint lithography and wet Si1 0 0 etching in water solution of hydrazine, which etches 1 1 1 faces much more slowly than others. Thermally grown SiO₂ mask for the hydrazine etching was used, because single Al mask cannot be well bonded to the substrate and tends to peel during the etching. It was revealed that transmittance in the infrared spectrum region of the patterned silicon decreases by about five times compared with that of flat silicon substrate and this decrease is almost independent of the angle of the incident beam. In the infrared region, decrease of transmittance of the patterned samples is directly proportional to the wave number. The shape of formed pyramids has strong influence on the transmittance. Decrease of the transmittance is much more rapid and larger in the case of sharpless pillars.     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

微模塑法制备PMMA/SiO2二氧化硅杂化材料微结构

以摩尔比为 1∶1的甲基丙烯酸甲酯 (MMA)、甲基丙烯酸 (3 三乙氧基硅烷基 )丙酯 (ESMA)单体、0 .2 %(单体总量的质量分数 )的偶氮二异丁腈AIBN引发剂和四氢呋喃 (THF)溶剂 ,及 2 0 % (总质量分数 )的正硅酸乙酯TEOS合成出PMMA/SiO2 有机 无机杂化的杂化溶胶 .将溶胶在洗净的普通光学玻璃基片表面甩膜 .利用软刻蚀中的微模塑法 ,把有机硅弹性印章复制有精细图纹一面轻放在杂化溶胶膜上进行微模塑 ,外加 1N压力于12 0℃下处理 2h使溶胶凝胶化 .印章剥离后在基片表面就形成了PMMA/SiO2 有机 无机杂化材料的微图纹结构 .从微图纹的光学显微镜照片可以看出微模塑方法制备杂化材料复制的图纹精细度高 ,操作简单易行 ,是一类比较理想的微细图纹结构加工的方法 .