任意层互连生产技术研究

任意层互连（ELIC）是最高阶的高密度连接（HDI）制程，它可以比传统线路在层数相同的情况下，增加约30%层间互连；随着移动通讯产品功能需求的增加，ELIC技术被大举应用在智能手机及平面电脑等产品上。高阶ELIC线路板的生产不但流程长，且生产难度较大。本文对ELIC板的制作难点进行了分析，并提出相应的解决方法和生产注意事项，为ELIC工艺产业化提供必要的参考依据。     

贵州广播电视台播出建设思路以及对未来播出的思考

本文从总体架构、业务流程、网络架构、关键点设计这几个建设要点进行阐述，介绍了贵州广播电视台的播出建设思路；同时通过引入4K播出、IP化、超融合架构、全媒体发布等前沿技术，进行对未来播出技术架构的展望。     

第Ⅱ种强度不等的非对称两态叠加多模叠加态光场的偶数阶等阶N次方Y压缩

本文构造了由多模复共轭相干态的相反态|{-Z_j^(a)*}>_q与多模虚共轭相干态的相反态|{-iZ_j^(b)*}>_q这两者的线性叠加所组成的第Ⅱ种强度不等的非对称两态叠加多模叠加态光场|Ψ_Ⅱ^(ab)>_q,利用多模压缩态理论研究了态|Ψ_Ⅱ^(ab)>_q的任意偶数阶等阶N次方Y压缩特性.结果发现:1)在压缩阶数N取偶数,即N=2p的条件下,无论p=2m(m=1,2,3,…,…),还是p=2m+1(m=0,1,2,3,…,…),只要构成态|Ψ_Ⅱ^(ab)>_q的两个不同的量子光场态中各对应模的强度(即平均光子数)和初始相位都不相等,亦即R_j^(a)≠R_j^(b)和φ_j^(a)≠φ_j^(b)(j=1,2,3,…,q),并且 ,则当满足一定的量子化条件(或者在一些闭区间内连续取值)时,态|Ψ_Ⅱ^(ab)>_q总可呈现出周期性变化的、任意偶数阶的等阶N次方Y压缩效应.2)在N=2p且p=2m+1(m=0,1,2,3,…,…)的条件下,若R_j^(a)=R_j^(b)和φ_j^(a)=φ_j^(b)(j=1,2,3,…,q),态|Ψ_Ⅱ^(ab)>_q则可呈现出等阶N次方Y压缩简并现象.     

Molecular beam study of photoionization of uranium and uranium oxide

Crossed laser molecular beam configuration was used to study the photoionization of U and UO by the UV-lines of an argon ion laser. Photoionization efficiencies of both U and UO were found to be line sensitive. Photoionization by the 3638 Å line was observed for the first time. Uranium atom ionization efficiency being higher for the 3345 Å and 3511 Å groups of lines, while UO ionization efficiency being maximum for the 3638 Å line. Dependence of photoion signal on laser power and relative photoionization efficiencies of the two isotopic species of uranium are also investigated.     

XDCAM EX小型高标清演播室解决方案

介绍了安徽中科邦略通信科技有限公司为新华社打造新闻演播车的系统设计，对车内使用的索尼PMW-EX3存储卡摄录一体机的特点进行了说明，对Sony “EX Any”系统解决方案进行了介绍。     

两等同双能级原子与q模腔场任意N∑光子共振相互作用辐射谱研究

本文建立了“q模腔场-两原子”系统的任意N^∑光子相互作用模型,利用这一模型研究了两个偶极一偶极力关联的等同双能级原子与q模腔场任意N^∑光子.共振相互作用的辐射谱.对q模腔场分别处于不同数态:即q模腔场均为真空场、q模腔场均为强场、1模为真空场(q-1)模为强场、q₀模为真空场(qq₀)模为强场、以及(q-1)模为真空场1模为强场时辐射谱的结构持征及物理特性进行了详细分析,揭示出“q模腔场-两原子”系统任意N^∑光子共振相互作用辐射谱的一般特征.现有文献报道,仅仅是本文的普遍性结果在各种不同情况下的特例.     

Structure and photoelectric behavior of amorphous semiconductors in the system PbSGeSGeS2

A study of the PbS-based vitreous semiconductors: (PbS)_x(GeS)_0.7?x(GeS)_0.3 has been made. The presence of Pb atoms is found to induce structural changes in the network. These semiconductors display chemical ordering which depends upon the relative concentration of the constituent atoms. This property influences the electronic behavior of the semiconductors. For x = 0.23 the composition exhibits different features in its electrical conductivity and photoconductivity, as compared with the other compositions.     

X-ray diffraction studies of glasses in the systems Na2OMeOSiO2 (MeMg,Zn, Ca,Ba)

X-ray diffraction studies of glasses in the following ternary systems have been made: Na₂OMgOSiO₂, Na₂OZnOSiO₂, Na₂OCaOSiO₂ and Na₂OBaOSiO₂. The following heavy atom substitutions have been used: Ag for Na and Ge for Si. The changes in the electron radial distribution curves resulting from AgNa replacement can be explained as amplifications of relatively well-defined NaSi distances, which are nearly the same in all the glasses investigated. The GeSi substitution causes changes which can be explained on the basis of isostructural GeSi substitutions.     

原子束计算全息片的设计与制作研究

在分析原子束计算全息片特点的基础上,提出采用罗曼Ⅲ型傅里叶变换计算全息图设计原子束计算全息片,给出设计步骤,然后提出采用电子束光刻编码矩孔图形,ICP各向异性刻蚀SiN薄膜的全息片制作方案,对全息片的制作工艺流程详细予以介绍,最后给出制作完成的SiN薄膜计算全息片.     

一种任意层HDI板制作工艺技术的研究

介绍了一种任意层HDI板的制作工艺,针对该类板的制作难点进行分析并提出解决方法。以一种十层任意层HDI板的制作为范例,重点对该制作工艺的激光、线路和电镀等重要制程的控制参数、难点及注意事项进行了讲解,为同行各企业提高生产生产任意层HDI板的技术水平起到抛砖引玉的作用。