全文获取类型
收费全文 | 196篇 |
免费 | 19篇 |
国内免费 | 44篇 |
专业分类
化学 | 4篇 |
晶体学 | 2篇 |
综合类 | 1篇 |
物理学 | 70篇 |
无线电 | 182篇 |
出版年
2024年 | 1篇 |
2023年 | 3篇 |
2022年 | 2篇 |
2020年 | 2篇 |
2018年 | 2篇 |
2017年 | 2篇 |
2016年 | 4篇 |
2015年 | 6篇 |
2014年 | 9篇 |
2013年 | 5篇 |
2012年 | 3篇 |
2011年 | 8篇 |
2010年 | 6篇 |
2009年 | 5篇 |
2008年 | 11篇 |
2007年 | 8篇 |
2006年 | 11篇 |
2005年 | 14篇 |
2004年 | 14篇 |
2003年 | 4篇 |
2002年 | 13篇 |
2001年 | 8篇 |
2000年 | 17篇 |
1999年 | 4篇 |
1998年 | 8篇 |
1997年 | 9篇 |
1996年 | 7篇 |
1995年 | 10篇 |
1994年 | 12篇 |
1993年 | 7篇 |
1992年 | 7篇 |
1991年 | 10篇 |
1990年 | 13篇 |
1989年 | 7篇 |
1988年 | 2篇 |
1984年 | 2篇 |
1977年 | 2篇 |
1975年 | 1篇 |
排序方式: 共有259条查询结果,搜索用时 797 毫秒
1.
A. Kussmaul S. Vernon P. C. Colter R. Sudharsanan A. Mastrovito K. J. Linden N. H. Karam N. H. Karam S. C. Warnick M. A. Dahleh 《Journal of Electronic Materials》1997,26(10):1145-1153
We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth
of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures
of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric
data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based
structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely
powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult
and time-consuming to obtain after growth. 相似文献
2.
M. R. Islam R. V. Chelakaea J. G. Neff K. G. Fertitta P. A. Grudowski A. L. Holmes F. J. Ciuba R. D. Dupuis J. E. Fouquet 《Journal of Electronic Materials》1995,24(6):787-792
AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen
contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure
of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on
these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence,
and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly
much greater than those grown with the regular-grade TMA1. The use of AsH3 purification improves the PL intensity. 相似文献
3.
In this paper we summarize our recent studies of the effects of local alloy disorder on the properties ofDX levels. A single emission rate is observed in GaAs where all Si-donors have identical local environments. In contrast, three
discrete emission rates are observed in dilute AlGaAs alloys, suggesting that the group IV donor moves towards the interstitial
site, thereby “selecting” three of the twelve surrounding group III atoms. We present evidence for an ordering of theDX levels consistent with Morgan’s model of a deepening potential well for theDX level as Al atoms are subsequently substituted for Ga atoms near the relaxed donor. These conclusions are consistent with
earlier calculations of Chadi and Chang. 相似文献
4.
采用表面效应集总模型综合考虑表面费米能级钉扎和表面复合效应,对AlGaAs/GaAsHBT表面效应的影响进行了二维数值模拟。结果表明,表面态的存在对集电极电流几乎不产生影响,但显著增加基极电流,使得电流增益明显下降。同时还发现在台面结构AIGaAs/GaAsHBT中外基区表面复合的集边效应,即外基区表面复合主要发生在发射极台面与外基区的交界处附近,与外基区长度基本无关。模拟还表明基区缓变结构可以减少表面复合,提高电流增益。 相似文献
5.
Makoto Kasu Rangaiya Rao Susumu Noda Akio Sasaki 《Journal of Electronic Materials》1991,20(9):691-693
Properties of theDX centers in Al0.5Ga0.5As bulk alloy (b-AL), (AlAs)2 (GaSa)2 ordered superlattice (o-SL) and (AlAs)
m
(GaAs)
n
disordered superlattice (d-SL) (m = 1, 2, 3,n = 1, 2, 3) with the same macroscopic composition were measured and compared. By deconvolution of deep level transient spectroscopy
(DLTS) spectrum due to theDX center, we have found a decrease in the number of separate peaks in DLTS spectrum in an intentionally atomic ordered arrangement.
Visiting Scholar of the Japan Society for the Promotion of Science. On leave from Department of Electrical Engineering, San
Jose State University, San Jose, California 95192-0084, USA. 相似文献
6.
GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究 总被引:2,自引:0,他引:2
许兆鹏 《固体电子学研究与进展》1996,16(1):56-63
为研制全集成光开关、微片式激光器等,对GaAs、GaP、InGaAsP、InAIGaAs、AlGaAs等材料的化学腐蚀进行了实验研究。为了研制InAlGaAs/InAlAs/InAlGaAs微片式激光器,开发了H3PO4/H2O2/H2O薄层腐蚀液和HCl/H2O选择性腐蚀液;为了研制InGaAsP/InP/InGaAsPTbar型光波导,开发了HCl/H3PO4/H2O2薄层腐蚀液和HCl/H2O2选择性腐蚀液;为了研制GaP、InGaP光波导,开发了HCl/HNO3/H2O薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外,蚀刻成的GaP光波导侧壁平滑无波纹起伏。此种结果尚未见报导。 相似文献
7.
采用光栅耦合结构的焦平面阵列(Focal Plane Array,FPA)在工艺上难以制备,反射耦合结构较为容易。为探究反射耦合结构是否可以在小尺寸范围内替代光栅耦合结构,文章使用FDTD电磁场仿真软件MEEP构建了光栅耦合结构和反射结构GaAs/AlGaAs量子阱红外焦平面阵列三像元模。通过对器件内部光学串音进行仿真,验证了在逼近衍射极限时,采用全内反射结构的FPA在5~7μm和8.5~10μm之间的抗串音效果强于光栅耦合结构,而在6.5~8.5μm和10~12μm之间,光栅耦合结构的抗串音效果更好,在12~15μm范围内,两种结构的抗串音能力相当。针对15μm中心距全内反射结构量子阱FPA,探究了反射角度、刻蚀深度和量子阱周期对其串音的影响。 相似文献
8.
准连续17 kW 808 nm GaAs/AlGaAs叠层激光二极管列阵 总被引:4,自引:5,他引:4
高功率激光二极管列阵广泛应用于抽运固体激光器.报道了17 kW GaAs/AlGaAs叠层激光二极管列阵的设计、制作过程和测试结果.为了提高器件的输出功率,一方面采用宽波导量子阱外延结构,降低腔面光功率密度,提高单个激光条的输出功率,通过金属有机物化学气相沉积(MOCVD)方法进行材料生长,经过光刻、金属化、镀膜等工艺制备1 cm激光条,填充密度为80%,单个激光条输出功率达100 W以上;另一方面器件采用高密度叠层封装结构,提高器件的总输出功率,实现了160个激光条叠层封装,条间距0.5 mm.经测试,器件输出功率达17kW,峰值波长为807.6 nm,谱线宽度为4.9 nm. 相似文献
9.
In this contribution, the electronic and linear and nonlinear optical properties of pyramid-shaped GaAs quantum dots (QDs) coupled to wetting layer (WL) in an Al0.3Ga0.7As matrix have been investigated. This nanostructure is relaxed from strain effects due to very small lattice-mismatching. Three transitions of P-to-S, WL-to-P, and WL-to-S were considered and the corresponding transition dipole moments, oscillator strengths, and linear and nonlinear optical properties regarding to these transitions were investigated as a function of the QD height. The results showed that for P-to-S transition, which is a purely in-plane-polarized transition, the dependence of electronic and optical properties on the size is moderate and can be neglected. But for WL-to-P and WL-to-S transitions, which are in-plane- and z-polarized transitions, respectively, the electronic as well as optical properties are strongly size-dependent. Furthermore, a competition between WL-to-S and WL-to-P transitions was observed when the QD size changed. 相似文献
10.
设计并研制了一种将p-n结和有源层分开的高功率AlGaAs/GaAs单量子阱远异质结(SQW-RJH)激光器,其发射波长为808 nm,腔长为900 μm,条宽为100μm.其外延结构与通常的808 nm AlGaAs/GaAs单量子阱半导体激光器的结构不同,在p-n结和有源区间多了一层0.3μm厚的p型Al0.3Ga0.7As下波导层.对研制的器件进行了电导数测试,结果显示,与常规AlGaAs/GaAs大功率半导体激光器相比,远结半导体激光器具有阚值电流偏大、导通电压偏高的直流特性.经4 200h的恒流电老化结果表明,器件在老化初期表现出阈值电流随老化时间缓慢下降,输出功率随老化时间缓慢上升的远结特性. 相似文献