Caesium carbonate supported on hydroxyapatite‐encapsulated Ni0.5Zn0.5Fe2O4 nanocrystallites as a novel magnetically basic catalyst for the one‐pot synthesis of pyrazolo[1,2‐b]phthalazine‐5,10‐diones

A novel nanomagnetic basic catalyst of caesium carbonate supported on hydroxyapatite‐coated Ni_0.5Zn_0.5Fe₂O₄ magnetic nanoparticles (Ni_0.5Zn_0.5Fe₂O₄@HAP‐Cs₂CO₃) was prepared. This new catalyst was fully characterized using Fourier transform infrared spectroscopy, transmission and scanning electron microscopy, X‐ray diffraction and vibrating sample magnetometry techniques, and then the catalytic activity of this catalyst was investigated in the synthesis of 1H‐pyrazolo[1,2‐b]phthalazine‐5,10‐dione derivatives. Also, Ni_0.5Zn_0.5Fe₂O₄@HAP‐Cs₂CO₃ could be reused at least five times without significant loss of activity and could be recovered easily by applying an external magnet. Thus, the developed nanomagnetic catalyst is potentially useful for the green and economic production of organic compounds. Copyright © 2015 John Wiley & Sons, Ltd.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

软交换与3G网络互通关键技术分析

就软交换网络和WCDMAR4网络互通的关键技术进行了分析和探讨，并借此提出了对互通节点的技术要求。     

DSP--数字化时代的基因芯片

DSP是当今发展最为迅速的和最有发展前景的技术之一。与普通CPU和MCU相比 ,DSP在数字信号处理方面有着无可比拟的优势 ,特别适合网络、通信、控制等需要进行大量数字信号处理的应用场合。今天DSP已经成为通信、计算机、网络、工业控制以及家用电器等电子产品中不可或缺的基础器件 ,DSP在通信、计算机、网络、工业控制以及消费类电子产品等领域有着非常广泛的应用 ,本文阐述了DSP的特点、应用和市场以及DSP技术的发展前景。     

基于TMS320VC5410的最小系统设计

TMS320VC5410是TI公司生产的一款定点数字信号处理(DSP)芯片。基于DSP的最小系统是以其简洁的硬件结构来实现DSP的一般功能,广泛应用于工业生产、教学、科研、电子设计等领域。主要介绍了基于TMS320VC5410的最小系统硬件电路设计方案,阐述了重要电路部分的抗干扰设计和软件调试过程中应注意的若干问题。最后提出了简单易行的软件调试方法以及部分程序代码。     

草酸钙在硫酸软骨素自组装膜上周期沉淀的研究

利用硫酸软骨素(chondroitin sulfate，CS)在云母基底上通过浇铸法制备的自组装膜为基底，诱导草酸钙在其上的凝集生长。发现当硫酸软骨素的浓度为1．Omg／ml时在该膜体系中可形成规整的周期性草酸钙环状沉淀。这种有序的环状结构可能是耗散结构的一种具体表现形式。利用原子力显微镜(atomic forcemicroscope，AFM)和傅立叶红外光谱仪对这种结构进行了表征，实验结果显示合适浓度下形成的CS膜在一定程度上可以抑制草酸钙的凝集结晶，表明高分子基质与无机离子间强烈的相互作用对无机盐的成核结晶有显著影响，为探讨结石的形成与抑制提供了一定的实验依据。     

DSP与单片机的一种高速通信实现方案

介绍了一种利用双口RAM实现DSP与单片机高速数据通信的方法，给出了它们之间的接口电路以及软件实现方案。     

基于CCS和DSK5402板的音频采集和回放程序设计

为了给程序设计作下基础,本文首先介绍了TI公司的TMS320VC5402和AIC(模拟接口电路)芯片TLC320AD50C的特点,最后着重介绍了利用DSK板上的TMS320C5402和TLC320AD50C实现音频采集并实时回放的软件设计过程,并利用CCS进行了模拟.     

双掺(Tm3+,Tb3+)LiYF4激光器1.5 μm波长激光阈值分析

由速率方程推出了双掺（Tm^3 ,Tb^3 ）离子准四能级系统的激光阈值解析式，讨论了Tm^3 和Tb^3 离子之间的相互作用。分析了1.5μm波长附近的激光阈值和Tm^3 、Tb^3 离子的掺杂原子数分数及晶体长度的关系。结果表明，对于对应Tm^3 离子^3H4→^3F4跃迁的约1.5μm波长的激光，激活离子Tm^3 的掺杂原子数分数过大时，交叉弛豫作用将使系统阈值迅速增加。Tb^3 离子的加入，一方面能抽空激光下能级，起到降低阈值的作用；另一方面亦减少了激光上能级的寿命，使阈值升高。故Tb^3 离子有最佳掺杂原子数分数。对于Tm原子数分数为y=0.01的Tm:LiYF4晶体，Tb^3 离子的最佳掺杂原子数分数为0.002左右，同时表明，激光阈值与晶体长度有关。最佳晶体长度与Tm^3 、Tb^3 离子的掺杂原子数分数以及晶体的衍射损耗和吸收损耗有关。