透射电镜薄样品倾转过程中的附加旋转及其计算

模拟透射电镜双倾台进行样品位向调整过程,推导出反映样品倾转前后其合成倾转轴(即共有菊池线对的法线)方向变化规律的计算公式,称为附加旋转角计算公式。指出,实现样品位向调整的双倾操作,等效于样品绕其合成倾转轴的倾转及该倾转轴绕Z轴(平行入射束方向)的旋转之和。利用双倾台对薄膜样品进行的系列倾转实验表明,由附加旋转角公式计算的附加旋转角和实测值相一致。还根据双倾操作过程导出了合成倾转角的计算公式,它可用于判断样品位向调整的准确度。     

Infrared dichroism measurements on the alkyl chain packing of an ionic detergent intercalated between silicate layers

 Microcrystals of the metal silicate hydrate ilerite orient macroscopically on the surface of a ATR-crystals and thus, are accessible for infrared linear dichroism measurements. We present first results which indicate that the alkyl chain packing and the orientation of the polar group of dodecyltrimethylammoniumbromide (DTAB) intercalated between silicate layers can be determined in terms of infrared order parameters. The properties of DTAB can be modulated by the relative humidity of the surrounding atmosphere and by temperature. Upon heating DTAB undergoes a phase transition from a paraffin-like solid to a fluid phase. The former is characterized by the orthorhombic perpendicular packing of the frozen alkyl chains with tilted long axes. The interactions between the ionic groups of the surfactant and that of the host matrix stabilize the lamellar arrangement of DTAB in the crystalline and in the fluid phases. Received: 14 January 1998 Accepted: 27 July 1998     

Highly tilted antiferroelectric (R) enantiomers useful for the formulation of eutectic mixtures

ABSTRACT

Novel chiral three-ring (R) enantiomers were synthesised using optically active (R)-(?)-2-octanol. Properties, such as the sequence of phases, the transition temperatures and enthalpies, were tested by a polarising optical microscope and differential scanning calorimeter. An antiferroelectric smectic phase (SmC_A*) with a direct transition from the antiferroelectric to the isotropic phase (SmC_A*-Iso) was observed for three esters with an achiral C₃F₇CH₂O(CH₂)₃O– terminal chain. Bi- and multicomponent mixtures with a broad temperature range of the antiferroelectric phase and good electro-optical properties were formulated. Helical pitch of pure esters and mixtures was measured by spectrophotometry method.     

Design and fabrication of 2 kHz nematic liquid crystal variable retarder with reflection mode

ABSTRACT

This study proposes a simple method of designing a high-speed liquid crystal variable retarder (LCVR) with reflection mode. First, a series of simple formulas is provided for analysing the effects of tilt incidence and birefringence of the liquid crystal on the phase retardation and response time of the LCVR. Then, a reflective LCVR is fabricated to validate the theoretical analysis. Measured results show that the response speed can reach 2.7 kHz with a phase retardation of 1 λ. Furthermore, the theoretical curve is close to the measured curve while the incident angle is less than 10°. However, the theoretical and measured values show a considerable difference under a large incident angle. This problem is discussed, and a modified method is given. This work is helpful for the design and fabrication of high-speed LCVR.     

Effect of barium titanate nanoparticles of different particle sizes on electro-optic and dielectric properties of ferroelectric liquid crystal

A comparative study of two different particle sizes of ferroelectric barium titanate (BaTiO₃) nanoparticles as a dopant on the molecular structure, spontaneous polarization and dielectric behavior of a pure ferroelectric liquid crystal 6F₆T have been studied. It has been found that there is a remarkable decrease in isotropic temperature of both doped samples as compared to the pure 6F₆T sample. The spontaneous polarization also decreases for both the doped samples and the reduction is more pronounced in case of the dopant with large particle size. The dielectric spectroscopy confirms the presence of soft mode as well as Goldstone mode and also shows the decrease in the value of dielectric permittivity ?' as a function of frequency for both doped samples. The improvised properties of liquid crystal host doped with BaTiO₃ nanoparticles mainly depend upon the synthesis method of nanoparticles and also upon the particle size of dopant.     

X-ray diffraction and dielectric spectroscopy studies on a partially fluorinated ferroelectric liquid crystal from the family of terphenyl esters

The fluorinated compound, (S)-4′′-(6-perfluoropentanoyoxyhexyl-1-oxy)-2′,3′-difluoro-4-(1-methylheptyloxycarbonyl)-[1,1′:4′,1′′]-terphenyl, which exhibits antiferroelectric SmC_A*, ferroelectric SmC* and paraelectric SmA* phases, has been investigated by polarising optical microscopy, differential scanning calorimetry, X-ray diffraction and frequency-dependent dielectric spectroscopy methods. X-ray studies have revealed that the layer thickness remains almost constant in the SmA* phase but within the SmC* and SmC_A* phases it decreases with decreasing temperature, a step jump being observed only at the SmA*–SmC* transition. The tilt angle in the SmC_A* phase decreases from 22.2° to 19.5°, and in the SmC* phase it decreases from 18.8° to 5.5°. Spontaneous polarisation is found to be quite high and varies between 74.1 and 118.7 nC cm^?2. The variation in ε′ and ε′′ with temperature shows a discontinuous change at the transition temperatures. Goldstone mode relaxation is only observed in the ferroelectric and antiferroelectric phases and is found to be of the Cole–Cole type. The soft mode is observed on application of a bias field near the SmC*–SmA* transition. Neither the soft mode nor the anti-phase azimuthal angle fluctuation mode is observed in SmC_A*. Rotational viscosity decreases quite rapidly with temperature but in a different manner in the ferroelectric and antiferroelectric phases. Activation energy for this process is found to be 48.14 kJ mol^?1 in the SmC* phase.     

Critical behaviour of the order parameters at the SmC* to SmA phase transition in a ferroelectric liquid crystal mixture

Critical behaviour of the order parameters has been investigated in the ferroelectric liquid crystal mixture ZLI‐3654 in a 7.5 µm thick planar cell. The temperature dependence of the primary (tilt angle) and secondary (spontaneous polarisation) order parameters is considered. The critical exponent (β) has been evaluated from the fitting of the temperature dependence of the experimental data for both tilt angle and spontaneous polarisation. Experimental results are compared with the predictions of the de Gennes and Landau models.     

圆形高斯镜平凹腔腔镜倾斜时光场模式分析

运用边界元素法把圆形高斯镜平凹腔的自再现模的衍射积分方程转化为有限阶矩阵方程。计算了谐振腔在理想情况和高斯反射率平面输出镜倾斜情况下基模的场强分布、相位分布和本征值。研究表明,腔镜倾斜使激光场模式分布沿发生倾斜的方向向镜边缘偏移,而且在腔镜倾斜较严重时模式分布发生畸变,不再是对称的拉盖尔-高斯基模分布。基模本征值随倾斜角增大而变小,光束远场分布变差。减小高斯分布反射率的膜斑半径,则能减弱因倾斜引起的模式畸变。     

Large deviations: An introduction to 2007 Abel prize

2007 Abel prize has been awarded to S R S Varadhan for creating a unified theory of large deviations. We attempt to give a flavour of this branch of probability theory, highlighting the role of Varadhan.     

Formation of abnormal dual‐peak profiles in large tilt angle boron implantation

Large tilt angle (LTA) implantation has been employed in Si manufacturing processes in many applications, such as lightly doped drain and halo implant. The depth profile of boron ions usually consists of only single peak at incident angle of 0° with respect to the perpendicular of the silicon surface. However, an abnormal dual‐peak profile was observed at LTA (>40°) with incident energy of 160 keV. By using a Monte Carlo method to simulate the ion implant process, it was found that the projected range of boron ions agrees completely with the formation of the first peak position that is shallower in depth, while the cause for the second peak that corresponds with a depth much deeper in the Si substrate was unknown. During the simulation, it was also found that when the tilt angle was increased, the sputtering yields and Si displacements increased significantly, and this phenomenon indicates that during LTA implantation, Si damage may not be negligible anymore. The Si damage effect that was as due to either low Si density or transient Si displacement in the simulation could have led to partial incident boron ions penetrating much deeper into the Si substrate and thus, caused the emergence of the second peak. Copyright © 2016 John Wiley & Sons, Ltd.