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电子封装技术中, 微互连焊点在一定温度梯度下将发生金属原子的热迁移现象, 显著影响界面金属间化合物的生长和基体金属的溶解行为. 采用Cu/Sn/Cu焊点在250℃和280℃下进行等温时效和热台回流, 对比研究了热迁移对液-固界面Cu6Sn5生长动力学的影响. 等温时效条件下, 界面Cu6Sn5生长服从抛物线规律, 由体扩散控制. 温度梯度作用下, 焊点冷、热端界面Cu6Sn5表现出非对称性生长, 冷端界面Cu6Sn5生长受到促进并服从直线规律, 由反应控制, 而热端界面Cu6Sn5生长受到抑制并服从抛物线规律, 由晶界扩散控制. 热端Cu 基体溶解到液态Sn中的Cu原子在温度梯度作用下不断向冷端热迁移, 为冷端界面Cu6Sn5的快速生长提供Cu 原子通量. 计算获得250℃和280℃下Cu原子在液态Sn中的摩尔传递热Q*分别为14.11和14.44 kJ/mol, 热迁移驱动力FL分别为1.62×10-19和1.70×10-19 N. 相似文献
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Vladimir Yu. Gershanov Sergey I. Garmashov Lyudmila I. Matyushina 《Journal of Crystal Growth》2010,312(20):2993-2998
It is shown that an application of theories developed on the assumption of the stationary thermal conditions for discussing the results on kinetic experiments with small volumes of solutions in melts is incorrect if the strong measures on eliminating temperature oscillations in these experiments are not taken. The results on an analysis of the influence of various temperature changes on the velocity of migration of liquid interlayers through a crystalline wafer are presented and discussed. Criteria for thermally stationary conditions in kinetic experiments are deduced. 相似文献
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