Preliminary study of the thermally stimulated blue luminescence of ulexite

In this paper, novel results on the blue thermally stimulated luminescence (TSL) emission of ulexite (NaCaB₅O₆(OH)₆·5H₂O) have been studied. The four maxima appearing at 60, 110, 200 and 240°C on the TSL glow curves of this borate could be respectively associated to: (i) the first dehydration (NaCaB₅O₆(OH)₆·5H₂O→NaCaB₅O₆(OH)₆·3H₂O), (ii) the creation-annihilation of the three-hydrated phase, (iii) the Na-coordinated chains dehydroxylation and the starting point of the alkali self-diffusion through the lattice and (iv) the amorphisation of the lattice. These results are fairly well correlated with the differential thermal analyses (DTA), in situ thermal observations under environmental scanning electron microscope (TESEM) and thermal X-ray diffraction (TXRD) techniques.     

Tb~(3 )在MO(M=Ca,Sr)中的长余辉发光

长余辉发光材料的研究与应用,已有近100年的历史,目前仍在许多领域中有着重要应用[1].此类材料与其他光致发光材料具有相同的发光性能,只是更注重其发光的衰减过程和热释光性能.如,ZnS:Cu作为黄绿色的长余辉发光材料,在1992年以前是余辉性能最好的长余辉发光材料,一直处于发光研究工作的中心.     

Investigation on relation between TL and OSL of Li2B4O7:Cu, In

Polycrystal Li₂B₄O₇ (LBO) doped with Cu and In was prepared and then sintered at different temperatures. X-ray diffraction (XRD) was applied to get the parameters of the LBO structure, thermoluminescence (TL) and optically stimulated luminescence (OSL) were measured, and a second-order exponential decay model was fitted to the OSL decay curves. The results indicate that the original number of OSL traps that have captured electroncs is linearly related with the sum of TL decay during the OSL process. Mean decay constant of OSL is related to the sintered temperature. The possible reason is that the sintered temperature affects the crystal sizes of the polycrystal, and consequently affects the stimulating lights’s intensity and the photoionization cross-section of the electrons, which have been captured by the traps. __________ Translated from Acta Scientiarum Naturalium Universitatis Sunyatseni, 2005, 44(4) (in Chinese)     

Indications of bulk property changes from surface ion implantation

In the majority of cases, the effects of ion implantation are confined close to the implant zone but, potentially, the resultant distortions and chemical modifications could catalyse relaxations extending into the bulk substrate. Such possibilities are rarely considered but the present data suggest that high dose ion implantation of ZnO has induced bulk changes. Surface implants with Cu and Tb strongly modified the low temperature bulk thermoluminescence properties generated by X-ray irradiation. Suggestions are proposed for the possible mechanisms for bulk relaxations and structural characteristics, which may indicate where such instability may occur in other lattice structures.     

Radiation induced polymerization of Vinylbenzoate–II. Study of the molecular weights of polymers

Abstract

In this study, the molecular weights of the polymer from vinyl benzoate has been reported for different dose rates and different temperatures. The mol.wt. remains around 4000. With increasing dose, the molecular weight increases to about 14,000. The degrees of polymerization and the kinetic chain lengths calculated from the experimentally determined G _R values have been compared which show that the kinetic chain length is larger than the D ^? Pn.

From a plot of the (D ^? Pn)^?1 vs. R _p , an intercept is obtained which is equal to 3.25 × 10^?2 which is higher than obtained in conventional polymerization. By examining the effect of temperature on mol.wt., the dependence of R _p on dose rate and the absence of induction period it has been concluded that chain transfer occurs to impurities that are generated during radiolysis.     

ZnS中电子陷阱能级对光生电子弛豫过程的影响

采用微波吸收法,测量了在不同助熔剂条件及不同气氛下烧制的ZnS材料受到超短激光脉冲激发后的光电子衰减过程,并且测量了材料的热释光曲线。样品A采用过量的SrCl作为助熔剂,在1150℃下灼烧制备而成;其热释光曲线显示材料中有浅电子陷阱,电子陷阱密度小,光生电子衰减过程为双指数衰减过程,快过程寿命为45ns,慢过程寿命为312ns。样品B中加入了少量的NaCl作为助熔剂;热释光曲线显示有浅电子陷阱和深电子陷阱,且都有较高的密度,其光电子寿命为1615ns。在NH₄Br气氛中烧制样品C,热释光谱显示只有浅电子陷阱形成,光电子寿命为1413ns。结果表明材料的光电子寿命和浅电子陷阱密切相关,浅电子陷阱密度越大,光生电子寿命越长,深电子陷阱对光生电子瞬态过程影响很小。     

Temperature profiles in a two-component heterogeneous system heated with a cw laser

A formalism has been developed to calculate the steady-state temperature profiles induced by a cw laser in a composite system comprising a thick medium covered with a film of another medium. The analysis is carried out assuming that thermal and optical properties of the media are temperature-independent. A concept of the effective thermal conductivity for the system is introduced in terms of the maximum temperature rise. Temperature-distributions are numerically computed in typical cases for a circular Gaussian beam to illustrate dependence on film thickness, thermal conductivities and absorption coefficients of the media and size of the laser beam.     

Quantum-chemical approach to defect formation processes in non-metallic crystals

Abstract

Results of the quantum-chemical simulation of the formation of structural and radiation defects are reviewed, using ice, silicon, and silicon dioxide as examples. The relationship between the structural elements of these crystals and the structural defects is analysed. Models of the main defects, their optical characteristics, and the activation energy of their migration are discussed. The relationship between the characteristics obtained by quantum-chemical calculations and the parameters of the macroscopic kinetics of the processes induced by defects in dielectric crystals is considered.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.     

Synthesis,Persistent Luminescence,and Thermoluminescence Properties of Yellow Sr3SiO5:Eu2+,RE3+ (RE=Ce,Nd, Dy,Ho, Er,Tm, Yb) and Orange‐Red Sr3−xBaxSiO5:Eu2+, Dy3+ Phosphor

Sunlight‐excitable orange or red persistent oxide phosphors with excellent performance are still in great need. Herein, an intense orange‐red Sr_3?xBa_xSiO₅:Eu²⁺,Dy³⁺ persistent luminescence phosphor was successfully developed by a two‐step design strategy. The XRD patterns, photoluminescence excitation and emission spectra, and the thermoluminescence spectra were investigated in detail. By adding non‐equivalent trivalent rare earth co‐dopants to introduce foreign trapping centers, the persistent luminescence performance of Eu²⁺ in Sr₃SiO₅ was significantly modified. The yellow persistent emission intensity of Eu²⁺ was greatly enhanced by a factor of 4.5 in Sr₃SiO₅:Eu²⁺,Nd³⁺ compared with the previously reported Sr₃SiO₅:Eu²⁺, Dy³⁺. Furthermore, Sr ions were replaced with equivalent Ba to give Sr_3?xBa_xSiO₅:Eu²⁺,Dy³⁺ phosphor, which shows yellow‐to‐orange‐red tunable persistent emissions from λ=570 to 591 nm as x is increased from 0 to 0.6. Additionally, the persistent emission intensity of Eu²⁺ is significantly improved by a factor of 2.7 in Sr_3?xBa_xSiO₅:Eu²⁺,Dy³⁺ (x=0.2) compared with Sr₃SiO₅:Eu²⁺,Dy³⁺. A possible mechanism for enhanced and tunable persistent luminescence behavior of Eu²⁺ in Sr_3?xBa_xSiO₅:Eu²⁺,RE³⁺ (RE=rare earth) is also proposed and discussed.