行波型热声发动机的分布参数法热力分析

在现有热声网络模型的基础上 ,对行波型热声发动机采用分布参数法进行了详细地分析 ,得到了较为完整的分布参数法网络模型 ,并给出了该模型的定性关系式 ,所得结果与采用集总参数法的结果有很大差异。分析表明 ,分布参数法更适合于一般的系统情况 ,集总参数法仅仅在一定条件下才适用。文中对一个实际系统应用分布参数法进行了分析 ,得到一些结论 ,对于我们设计行波型热声发动机有非常重要的理论指导意义     

Torsors and Stacks

It is shown that the groupoid of G-torsors, suitably defined, can be used to construct a model for the stack associated to G, for arbitrary sheaves of groupoids G. This research was supported by the Natural Sciences and Engineering Research Council of Canada.     

Graph theoretical procedure for obtaining analytical expressions of eigenspectra of linear chains and cycles with alternant vertex weights and same edge weight: Application to some complicated graphs

A graph theoretical procedure for obtaining eigenvalues of linear chains and cycles having alternant vertex weights (h₁, h₂, h₁, h₂, h₁, h₂, …) and the same edge weight (k) have been developed. The eigenvalues of some complicated graphs, such as graphs of linear polyacenes, methylene‐substituted linear polyacenes and cylindrical polyacene strips, stack graphs, and reciprocal graphs have been shown to be generated in closed analytical forms by this procedure. Many such graphs represent chemically important molecules or radicals. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2005     

一种基于STM32的NAND flash的块分配框架设计

STM32对大容量数据文件存储与管理问题可通过NAND flash来解决。而NAND flash的高效管理需要文件系统参与。NAND flash有特殊的块读写及擦除机制,一般的嵌入式文件系统组织结构并不完全兼容NAND flash。针对NAND flash的特点兼顾STM32的资源承受力要提出新的NAND flash块分配框架,框架通过块分配槽这种数据结构,在不使用块分配表与垃圾表的情况下,实现了NAND flash均衡负载与垃圾块的回收;同时通过节点分配栈与文件节点表的配合来提高STM32对文件的读写速度,空间利用率和系统性能。仿真实验和计算结果表明该块分配框架可有效提高NAND flash块的均衡负载与节省RAM空间。     

热声波数值模拟的虚假振荡研究

采用可压缩流动的SIMPLE算法对一维封闭空腔内由边界突然加热所引起的非稳态热声波进行了数值模拟,对流-扩散项采用了中心差分、一阶迎风差分、QUICK、及MIJSCL等不同格式。计算表明各种格式均存在不同程度的虚假振荡现象,其大小与热声波的强度及离散格式的形式等多种因素有关。这些结果对热声波的进一步研究及高效可靠的对流差分格式的开发具有重要意义。     

端部周期加热下管内气温奇异分布的实验研究

设计搭建了端部周期加热时管内气体热声对流的实验平台,对端部周期加热引起的气体热声对流作用下管内气体的温度分布进行了实验研究。该实验以氩气为工质,利用三极管控制加热电路实现周期性加热;测量了不同加热频率下管内的气体温度,并与常热流加热时的温度分布进行对比,结果表明端部周期加热时管内气体的温度分布与同功率下常热流加热时存在明显的差异,并且在某些测点出现了温度的奇异分布。本实验验证了超温现象的存在,为管内气体热声对流现象的进一步研究奠定了基础。     

Migration of protons in a chain of tyrosine residues

This article deals with the proton migration in a tyrosine stack, which models the proton channels existing in a number of proteins, including tubulin. The magnesium ion Mg²⁺ within the complex with guanosine triphosphate facilitates dissociation of a water molecule through initiating a shift of protons along the chain composed of relatively distant tyrosine residues. The process is thermodynamically stable (ΔG₂₉₈<0). The energy barrier for the protein shift does not exceed 3.15 kJ/mole. A relatively weak electrostatic field mimicking electret properties of proteins facilitates long‐distance proton migration. © 2001 John Wiley & Sons, Inc. Int J Quantum Chem 84: 409–415, 2001     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Interface control of high-k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO₂ interface and ALD high-k layers, with an interface state density D_it ∼ 2 × 10¹¹ cm⁻² eV⁻¹. Another approach is with an epi-Si/SiO₂ interface, resulting in similar D_it. Hysteresis and V_th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.     

Moduli stacks and invariants of semistable objects on K3 surfaces

For a K3 surface X and its bounded derived category of coherent sheaves D(X), we have the notion of stability conditions on D(X) in the sense of T. Bridgeland. In this paper, we show that the moduli stack of semistable objects in D(X) with a fixed numerical class and a phase is represented by an Artin stack of finite type over C. Then following D. Joyce's work, we introduce the invariants counting semistable objects in D(X), and show that the invariants are independent of a choice of a stability condition.