Characterization of ZnO:AI films deposited by r.f.magnetron-sputtering at low temperature

Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Investigation of thin-film electroluminescent structures on rough subsrates

Results of experimental investigations of the volt-brightness characteristics, frequency dependences of brightness, and the directional radiation pattern of electroluminescent MSDM, MSCM, and MSDCM emitters, where M stands for the first transparent and second nontransparent electrodes, S is a semiconductor, D is a thin-film dielectric, and C is a silicone-based composite liquid dielectric with a powdered segnetoelectric filler, developed on conventional “smooth” and rough glass substrates are presented. It is shown that electroluminescent structures on rough surfaces have a brightness approximately two times higher than that of similar structures developed on a “smooth” substrate. Ul’yanovsk State University, 42, L. Tolstoi St., Ul’yanovsk, 432700, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 507–512, July–August, 1997.     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

二维光电位置敏感器件的非线性修正

根据二维光电位置敏感器件 (PSD)的工作原理 ,分析了影响PSD线性度的主要因素 ,提出了一种用神经网络对PSD进行非线性修正的方法。以PSD的输入输出数据对作为样本训练的神经网络 ,利用神经网络所具有地能够以任意精度逼近非线性函数的能力 ,实现PSD的输出与实际光点位置之间的映射 ,在神经网络的输出端得到线性响应。该方法的优点是不需要很大的数据存储量即可得到很好的修正效果。结果表明 ,修正后的PSD能在较宽的位置范围内输出高线性度的信号     

Resolving Discrepancy between Theoretical and Experimental Optical Trapping Forces Using Effects of Beam Waist and Trapping Position Displacement due to Gravity

Optical trapping forces of polystyrene microspheres are analyzed both theoretically and experimentally, and comparisons are made between the two. Discrepancies are mainly caused by straight-ray approximation for axial trapping, and by trapping-position vertical displacement due to gravity for transverse trapping.     

第I种非对称三态叠加多模叠加态光场的高次和压缩——第一正交分量的N次方H压缩效应

构造了第孙中禹种强度不等的非对称三态叠加多模叠加态光场|ψ₁^(ABC)〉_q.利用多模压缩态理论研究了态|ψ₁^(ABC)〉_q第一正交分量高次和压缩.结果发现:①当构成态|ψ₁^(ABC)〉_q的三个多模相干态光场的强度不相等时,在一定条件下,态|ψ₁^(ABC)〉_q的第一正交分量可出现任意幂次的高次和压缩.②当上述的三个多模相干态光场强度相等时,态|ψ₁^(ABC)〉_q的第一正交分量的高次和压缩现象消失.在这种情况下,态|ψ₁^(ABC)〉_q的第一正交分量恒处于NH最小测不准态.     

Optimization of the locations of the loudspeaker and absorption material in a small room

The sound field both in the loudspeaker box and in the room is calculated by an analytical solution of three-dimensional wave equation. It is shown in theory that the amplitude response in small rooms is affected by the following positions: driver position on the front panel of the box, box position in the room, absorption material position in the box and absorption material position on the interior walls of the room. Both our computer prediction and experiments prove that the optimum positions are beneficial to the amplitude response.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

FTIR measurements of CO2 line positions and intensities at high temperature in the 3700-3750 cm spectral region

Positions and intensities for 453 spectral lines in 12 rovibrational bands of ¹²C¹⁶O₂ have been determined between 3700 and 3750 cm⁻¹. At three temperatures (294, 500, and 698 K) eight spectra have been recorded at a pressure around 5 mbar and for an absorption path of about 190 cm⁻¹ using a Bomen DA3 Fourier transform spectrometer (4 × 10⁻³ cm⁻¹ resolution). Some of the measured positions and intensities can be compared with recent experimental results that validate the experimental set-up and the data analysis procedure. The results are also compared with the values listed in the HITRAN 2000 database. If the agreement is generally good, discrepancies are observed for three hot bands.